Works by NEVEDOMSKIY, V. N.

Results: 12

SELF-ASSEMBLING OF SILVER NANOPARTICLES IN GLASSES UNDER ELECTRON BEAM IRRADIATION.

Published in:

International Journal of Nanoscience, 2011, v. 10, n. 6, p. 1265, doi. 10.1142/S0219581X11008411

By:

SIDOROV, A. I.;
NASHCHEKIN, A. V.;
NEVEDOMSKIY, V. N.;
USOV, O. A.;
PODSVIROV, O. A.

Publication type:

Article

The Features of the Layers Growth in Stressed InAs/GaSb Superlattices.

Published in:

Technical Physics Letters, 2023, v. 49, p. S60, doi. 10.1134/S1063785023900376

By:

Levin, R. V.;
Nevedomskiy, V. N.;
Sokura, L. A.

Publication type:

Article

The Effect of Thermal Treatment on Properties of Composite Silicon–Carbon Anodes for Lithium-Ion Batteries.

Published in:

Technical Physics Letters, 2020, v. 46, n. 2, p. 114, doi. 10.1134/S1063785020020042

By:

Astrova, E. V.;
Parfeneva, A. V.;
Rumyantsev, A. M.;
Ulin, V. P.;
Baidakova, M. V.;
Nevedomskiy, V. N.;
Nashchekin, A. V.

Publication type:

Article

High-Power Quantum-Cascade Lasers Emitting in the 8-μm Wavelength Range.

Published in:

Technical Physics Letters, 2019, v. 45, n. 7, p. 735, doi. 10.1134/S1063785019070174

By:

Babichev, A. V.;
Dudelev, V. V.;
Gladyshev, A. G.;
Mikhailov, D. A.;
Kurochkin, A. S.;
Kolodeznyi, E. S.;
Bougrov, V. E.;
Nevedomskiy, V. N.;
Karachinsky, L. Ya.;
Novikov, I. I.;
Denisov, D. V.;
Ionov, A. S.;
Slipchenko, S. O.;
Lutetskiy, A. V.;
Pikhtin, N. A.;
Sokolovskii, G. S.;
Egorov, A. Yu.

Publication type:

Article

Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots.

Published in:

Semiconductors, 2023, v. 57, n. 2, p. 93, doi. 10.1134/S1063782623040012

By:

Babichev, A. V.;
Komarov, S. D.;
Tkach, Yu. S.;
Nevedomskiy, V. N.;
Blokhin, S. A.;
Kryzhanovskaya, N. V.;
Gladyshev, A. G.;
Karachinsky, L. Ya.;
Novikov, I. I.

Publication type:

Article

Interaction of Fluorocarbon with Silicon Monoxide and Processes of SiC Nanowire Formation.

Published in:

Semiconductors, 2020, v. 54, n. 8, p. 900, doi. 10.1134/S1063782620080059

By:

Astrova, E. V.;
Ulin, V. P.;
Parfeneva, A. V.;
Nashchekin, A. V.;
Nevedomskiy, V. N.;
Baidakova, M. V.

Publication type:

Article

Multilayer Quantum Well-Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1249, doi. 10.1134/S1063782618100147

By:

Mintairov, S. A.;
Kalyuzhnyy, N. A.;
Nadtochiy, A. M.;
Maximov, M. V.;
Nevedomskiy, V. N.;
Sokura, L. A.;
Rouvimov, S. S.;
Shvarts, M. Z.;
Zhukov, A. E.

Publication type:

Article

Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier.

Published in:

Semiconductors, 2013, v. 47, n. 9, p. 1185, doi. 10.1134/S1063782613090170

By:

Nevedomskiy, V. N.;
Bert, N. A.;
Chaldyshev, V. V.;
Preobrazhenskiy, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Absorption in laser structures with coupled and uncoupled quantum dots in an electric field at room temperature.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 490, doi. 10.1134/S1063782609040150

By:

Sobolev, M. M.;
Gadzhiyev, I. M.;
Bakshaev, I. O.;
Mikhrin, V. S.;
Nevedomskiy, V. N.;
Buyalo, M. S.;
Zadiranov, Yu. M.;
Portnoi, E. L.

Publication type:

Article

Electrochemical features of tetracycline oxidation on mechanoactivated g-C3N4/PrFeO3 nanocomposites.

Published in:

Journal of Applied Electrochemistry, 2024, v. 54, n. 9, p. 2063, doi. 10.1007/s10800-024-02080-5

By:

Chebanenko, M. I.;
Dmitriev, D. S.;
Seroglazova, A. S.;
Lebedev, L. A.;
Stovpiaga, E. Yu.;
Nevedomskiy, V. N.;
Popkov, V. I.

Publication type:

Article

InGaAs metamorphic laser (1064 nm) power converters with over 40% efficiency.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 173, doi. 10.1049/el.2016.4308

By:

Kalyuzhnyy, N. A.;
Mintairov, S. A.;
Nadtochiy, A. M.;
Nevedomskiy, V. N.;
Rybalchenko, D. V.;
Shvarts, M. Z.

Publication type:

Article

Investigation of the Characteristics of the InGaAs/InAlGaAs Superlattice for 1300 nm Range Vertical-Cavity Surface-Emitting Lasers.

Published in:

Technical Physics, 2023, v. 68, n. 12, p. 549, doi. 10.1134/S1063784223080078

By:

Blokhin, S. A.;
Babichev, A. V.;
Gladyshev, A. G.;
Karachinsky, L. Ya.;
Novikov, I. I.;
Blokhin, A. A.;
Bobrov, M. A.;
Maleev, N. A.;
Kuzmenkov, A. G.;
Nadtochiy, A. M.;
Nevedomskiy, V. N.;
Andryushkin, V. V.;
Rochas, S. S.;
Denisov, D. V.;
Voropaev, K. O.;
Zhumaeva, I. O.;
Ustinov, V. M.;
Egorov, A. Yu.;
Bougrov, V. E.

Publication type:

Article