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Optical and Structural Properties of Hg<sub>0.7</sub>Cd<sub>0.3</sub>Te Epitaxial Films.
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- Semiconductors, 2023, v. 57, n. 12, p. 519, doi. 10.1134/S1063782623090026
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- Article
Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement.
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- Semiconductors, 2023, v. 57, n. 5, p. 263, doi. 10.1134/S1063782623070163
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- Article
Determination of the Parameters of Multi-Carrier Spectrum in CdHgTe. II. Discrete Mobility Spectrum Analysis.
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- Russian Physics Journal, 2023, v. 65, n. 10, p. 1716, doi. 10.1007/s11182-023-02822-6
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Determination of the Parameters of Multi-Carrier Spectrum in CdHgTe. I. A Review of Mobility Spectrum Analysis Methods.
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- Russian Physics Journal, 2023, v. 65, n. 9, p. 1538, doi. 10.1007/s11182-023-02799-2
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- Article
Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films.
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- Applied Nanoscience, 2022, v. 12, n. 3, p. 395, doi. 10.1007/s13204-021-01704-y
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- Article
Comparative Analysis of the Electroluminescence Efficiency in Type-I and Type-II Heterostructures Based on III–V Narrow-Gap Compounds.
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- Semiconductors, 2022, v. 56, n. 2, p. 43, doi. 10.1134/S1063782622010043
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- Article
Spectral and Electrical Properties of LED Heterostructures with InAs-based Active Layer.
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- Semiconductors, 2021, v. 55, n. 12, p. 989, doi. 10.1134/S1063782621080169
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- Article
Optical Properties of Quasi-Bulk Gallium-Nitride Crystals with Highly Oriented Texture Structure.
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- Semiconductors, 2021, v. 55, n. 7, p. 617, doi. 10.1134/S1063782621070113
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- Article
Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures.
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- Journal of Electronic Materials, 2021, v. 50, n. 6, p. 3714, doi. 10.1007/s11664-021-08877-w
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- Article
Study of the Current–Voltage Characteristics of InAsSb-Based LED Heterostructures in the 4.2–300 K Temperature Range.
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- Semiconductors, 2021, v. 55, n. 6, p. 557, doi. 10.1134/S1063782621060130
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- Article
Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction.
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- Semiconductors, 2021, v. 55, n. 3, p. 354, doi. 10.1134/S1063782621030155
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- Article
Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy.
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- Applied Nanoscience, 2020, v. 10, n. 12, p. 4971, doi. 10.1007/s13204-020-01327-9
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- Article
Optical and Structural Properties of HgCdTe Solid Solutions with a High CdTe Content.
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- Semiconductors, 2020, v. 54, n. 12, p. 1561, doi. 10.1134/S1063782620120258
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TEM studies of structural defects in HgTe/HgCdTe quantum wells.
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- Applied Nanoscience, 2020, v. 10, n. 8, p. 2867, doi. 10.1007/s13204-019-01142-x
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- Article
Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8.
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- Journal of Electronic Materials, 2020, v. 49, n. 8, p. 4642, doi. 10.1007/s11664-020-08160-4
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- Article
Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE.
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- Russian Physics Journal, 2020, v. 63, n. 2, p. 290, doi. 10.1007/s11182-020-02034-2
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- Article
Experimental Study and Simulation of the Spectral Characteristics of LED Heterostructures with an InAs Active Region.
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- Technical Physics Letters, 2020, v. 46, n. 2, p. 150, doi. 10.1134/S1063785020020121
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- Article
Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor.
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- Semiconductors, 2019, v. 53, n. 12, p. 1651, doi. 10.1134/S1063782619160279
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Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers.
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- Technical Physics, 2019, v. 64, n. 10, p. 1509, doi. 10.1134/S106378421910013X
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- Article
Luminescence studies of HgCdTe- and InAsSb-based quantum-well structures.
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- Applied Nanoscience, 2019, v. 9, n. 5, p. 617, doi. 10.1007/s13204-018-0760-6
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- Article
Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study.
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- Applied Nanoscience, 2019, v. 9, n. 5, p. 725, doi. 10.1007/s13204-018-0679-y
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- Article
An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions.
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- Technical Physics Letters, 2019, v. 45, n. 6, p. 553, doi. 10.1134/S1063785019060099
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- Article
Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies.
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- Semiconductors, 2019, v. 53, n. 4, p. 428, doi. 10.1134/S1063782619040043
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- Article
OPTICAL PROPERTIES OF BULK GALLIUM OXIDE GROWN FROM THE MELT.
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- Reviews on Advanced Materials Science, 2018, v. 57, n. 1, p. 97, doi. 10.1515/rams-2018-0051
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- Article
Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies.
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- Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4731, doi. 10.1007/s11664-018-6364-9
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- Article
Defects in Arsenic Implanted р -n- and n -p- Structures Based on MBE Grown CdHgTe Films.
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- Russian Physics Journal, 2018, v. 60, n. 10, p. 1752, doi. 10.1007/s11182-018-1278-9
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- Article
Luminescence of II-VI and III-V nanostructures.
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- Opto-Electronics Review, 2017, v. 25, n. 3, p. 209, doi. 10.1016/j.opelre.2017.06.005
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- Article
Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies.
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- Opto-Electronics Review, 2017, v. 25, n. 2, p. 148, doi. 10.1016/j.opelre.2017.03.007
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- Article
Effect of composition fluctuations on radiative recombination in narrow-gap semiconductor solid solutions.
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- Technical Physics, 2017, v. 62, n. 3, p. 441, doi. 10.1134/S1063784217030197
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- Article
Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K.
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- Semiconductors, 2017, v. 51, n. 2, p. 239, doi. 10.1134/S1063782617020117
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- Article
Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy.
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- Russian Physics Journal, 2016, v. 59, n. 3, p. 442, doi. 10.1007/s11182-016-0792-x
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- Article
Fundamental and Technological Limitations of Optical Communications.
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- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 1/2, p. -1, doi. 10.1142/S0129156416400103
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- Article
Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates.
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- Semiconductors, 2016, v. 50, n. 2, p. 208, doi. 10.1134/S1063782616020160
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Formation of graphite/sic structures by the thermal decomposition of silicon carbide.
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- Semiconductors, 2016, v. 50, n. 1, p. 138, doi. 10.1134/S1063782616010176
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- Article
Na<sub>2</sub>SiO<sub>3</sub> liquid glass-based phosphor material for white LEDs.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 12, p. 2964, doi. 10.1002/pssa.201532655
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Optical and thermal properties of phosphors based on lead-silicate glass for high-power white LEDs.
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- Technical Physics Letters, 2015, v. 41, n. 11, p. 1041, doi. 10.1134/S1063785015110097
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- Article
Temperature dependence of the carrier lifetime in narrow-gap CdHgTe solid solutions: Radiative recombination.
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- Semiconductors, 2015, v. 49, n. 9, p. 1170, doi. 10.1134/S1063782615090067
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- Article
Temperature dependence of the carrier lifetime in CdHgTe narrow-gap solid solutions with consideration for Auger processes.
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- Semiconductors, 2015, v. 49, n. 4, p. 432, doi. 10.1134/S1063782615040065
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- Article
Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy.
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- Semiconductors, 2015, v. 49, n. 3, p. 367, doi. 10.1134/S1063782615030148
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- Article
Specific features of the hydride vapor-phase epitaxy of nitride materials on a silicon substrate.
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- Semiconductors, 2014, v. 48, n. 11, p. 1535, doi. 10.1134/S1063782614110189
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- Article
Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p- n photodiode structure formation.
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- Technical Physics Letters, 2014, v. 40, n. 8, p. 708, doi. 10.1134/S1063785014080239
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On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum.
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- Semiconductors, 2014, v. 48, n. 3, p. 350, doi. 10.1134/S106378261403018X
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Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment.
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- Semiconductors, 2014, v. 48, n. 2, p. 195, doi. 10.1134/S1063782614020134
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Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs.
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- Opto-Electronics Review, 2013, v. 21, n. 4, p. 390, doi. 10.2478/s11772-013-0103-9
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- Article
Effects of light scattering in optical coatings on energy losses in LED devices.
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- Technical Physics Letters, 2013, v. 39, n. 12, p. 1074, doi. 10.1134/S1063785013120213
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- Article
High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy.
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- Technical Physics, 2013, v. 58, n. 10, p. 1536, doi. 10.1134/S1063784213100198
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- Article
Electrical properties of HgCdTe films grown by MOCVD and doped with as.
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- Opto-Electronics Review, 2013, v. 21, n. 2, p. 220, doi. 10.2478/s11772-013-0086-6
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- Article
Relaxation of a radiation-damaged layer formed during ion-beam milling of CdHgTe solid solutions.
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- Technical Physics Letters, 2013, v. 39, n. 1, p. 16, doi. 10.1134/S1063785013010136
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- Article
Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates.
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- Opto-Electronics Review, 2012, v. 20, n. 4, p. 375, doi. 10.2478/s11772-012-0048-4
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- Article
Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates.
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- Semiconductors, 2012, v. 46, n. 10, p. 1341, doi. 10.1134/S1063782612100065
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- Article