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CATHODOLUMINESCENCE AND PHOTOLUMINESCENCE OF NV CENTERS.
- Published in:
- International Journal of Nanoscience, 2012, v. 11, n. 4, p. -1, doi. 10.1142/S0219581X12400169
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- Publication type:
- Article
O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate.
- Published in:
- Nanomaterials (2079-4991), 2020, v. 10, n. 12, p. 2450, doi. 10.3390/nano10122450
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- Publication type:
- Article
A New Two-Photon-Sensitive Block Copolymer Nanocarrier.
- Published in:
- Angewandte Chemie International Edition, 2009, v. 48, n. 18, p. 3329, doi. 10.1002/anie.200900255
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- Article
Innovation for Engineering and Architecture Buildings.
- Published in:
- ASHRAE Journal, 2021, v. 63, n. 9, p. 66
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- Publication type:
- Article
Phase control algorithms and filamentation of ultrashort laser pulses in a scattering medium.
- Published in:
- Applied Physics B: Lasers & Optics, 2018, v. 124, n. 11, p. 1, doi. 10.1007/s00340-018-7083-x
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- Publication type:
- Article
Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography.
- Published in:
- Materials (1996-1944), 2016, v. 9, n. 7, p. 511, doi. 10.3390/ma9070511
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- Publication type:
- Article
In-situ height engineering of InGaAs/GaAs quantum dots by chemical beam epitaxy.
- Published in:
- Journal of Nanophotonics, 2016, v. 10, n. 3, p. 1, doi. 10.1117/1.jnp.10.033501
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- Publication type:
- Article
Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure (Phys. Status Solidi A 9∕2015).
- Published in:
- 2015
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- Publication type:
- Other
Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 9, p. 1888, doi. 10.1002/pssa.201532006
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- Publication type:
- Article
Dr C. Paul Sabiston 1954-2022.
- Published in:
- British Columbia Medical Journal, 2023, v. 65, n. 1, p. 30
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- Publication type:
- Article