Found: 19
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Filament-free memristors for computing.
- Published in:
- Nano Convergence, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40580-023-00407-0
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- Article
In Operando Optical Tracking of Oxygen Vacancy Migration and Phase Change in few Nanometers Ferroelectric HZO Memories.
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- Advanced Functional Materials, 2023, v. 33, n. 22, p. 1, doi. 10.1002/adfm.202214970
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- Article
Hybrid Deep Learning Crystallographic Mapping of Polymorphic Phases in Polycrystalline Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films.
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- Small, 2022, v. 18, n. 18, p. 1, doi. 10.1002/smll.202107620
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- Article
Characterization of a 2D Electron Gas at the Interface of Atomic‐Layer Deposited Al<sub>2</sub>O<sub>3</sub>/ZnO Thin Films for a Field‐Effect Transistor.
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- Advanced Electronic Materials, 2021, v. 7, n. 1, p. 1, doi. 10.1002/aelm.202000876
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- Article
Effect of Uncertainties in Material and Structural Detailing on the Seismic Vulnerability of RC Frames Considering Construction Quality Defects.
- Published in:
- Applied Sciences (2076-3417), 2020, v. 10, n. 24, p. 8832, doi. 10.3390/app10248832
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- Article
Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al<sub>2</sub>O<sub>3</sub>/SrTiO<sub>3</sub> Interface.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901286
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- Article
2D Electronics: Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al<sub>2</sub>O<sub>3</sub>/SrTiO<sub>3</sub> Interface (Adv. Electron. Mater. 6/2020).
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901286
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- Article
A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors.
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- Nanoscale Research Letters, 2020, v. 15, n. 1, p. 1, doi. 10.1186/s11671-020-03301-4
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- Article
Transient Negative Capacitance Effect in Atomic‐Layer‐Deposited Al<sub>2</sub>O<sub>3</sub>/Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub> Bilayer Thin Film.
- Published in:
- Advanced Functional Materials, 2019, v. 29, n. 17, p. N.PAG, doi. 10.1002/adfm.201808228
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- Article
Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800436
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- Article
2D Electron Gas at the Interface of Atomic‐Layer‐Deposited Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> on SrTiO<sub>3</sub> Single Crystal Substrate.
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- Advanced Electronic Materials, 2019, v. 5, n. 1, p. N.PAG, doi. 10.1002/aelm.201800527
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- Article
Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al<sub>2</sub>O<sub>3</sub>/Nb:SrTiO<sub>3</sub>.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800388
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- Article
Giant Negative Electrocaloric Effects of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films.
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- Advanced Materials, 2016, v. 28, n. 36, p. 7956, doi. 10.1002/adma.201602787
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- Article
Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors.
- Published in:
- Scientific Reports, 2016, p. 20825, doi. 10.1038/srep20825
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- Article
Frustration of Negative Capacitance in Al<sub>2</sub>O<sub>3</sub>/BaTiO<sub>3</sub> Bilayer Structure.
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- Scientific Reports, 2016, p. 19039, doi. 10.1038/srep19039
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- Article
Ferroelectricity and Antiferroelectricity of Doped Thin HfO<sub>2</sub>-Based Films.
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- Advanced Materials, 2015, v. 27, n. 11, p. 1811, doi. 10.1002/adma.201404531
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- Article
Thin Hf<sub> x</sub>Zr<sub>1- x</sub>O<sub>2</sub> Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability.
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- Advanced Energy Materials, 2014, v. 4, n. 16, p. n/a, doi. 10.1002/aenm.201400610
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- Article
Effect of the annealing temperature of thin Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub> films on their energy storage behavior.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 10, p. 857, doi. 10.1002/pssr.201409349
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- Article
Ferroelectric properties and switching endurance of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films on TiN bottom and TiN or RuO<sub>2</sub> top electrodes.
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- Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 6, p. 532, doi. 10.1002/pssr.201409017
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- Article