Found: 7

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  • Dynamical study of the radiative recombination processes in GaN/AlGaN QWs.

    Published in:
    Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 316, doi. 10.1007/s10854-008-9672-7
    By:
    • Sabooni, Mahmood;
    • Esmaeili, Morteza;
    • Haratizadeh, Hamid;
    • Monemar, Bo;
    • Amano, Hiroshi
    Publication type:
    Article

  • Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers.

    Published in:
    Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 24, p. 1, doi. 10.1002/pssa.202000465
    By:
    • Goto, Ken;
    • Takekawa, Nao;
    • Nagashima, Toru;
    • Yamamoto, Reo;
    • Pozina, Galia;
    • Dalmau, Rafael;
    • Schlesser, Raoul;
    • Collazo, Ramón;
    • Monemar, Bo;
    • Sitar, Zlatko;
    • Boćkowski, Michał;
    • Kumagai, Yoshinao
    Publication type:
    Article

  • Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates.

    Published in:
    Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1532, doi. 10.1002/pssa.201001036
    By:
    • Monemar, Bo;
    • Paskov, Plamen;
    • Pozina, Galia;
    • Hemmingsson, Carl;
    • Bergman, Peder;
    • Lindgren, David;
    • Samuelson, Lars;
    • Ni, Xianfeng;
    • Morkoç, Hadis;
    • Paskova, Tanya;
    • Bi, Zhaoxia;
    • Ohlsson, Jonas
    Publication type:
    Article

  • Spatially resolved Hall effect measurement in a single semiconductor nanowire.

    Published in:
    Nature Nanotechnology, 2012, v. 7, n. 11, p. 718, doi. 10.1038/nnano.2012.190
    By:
    • Storm, Kristian;
    • Halvardsson, Filip;
    • Heurlin, Magnus;
    • Lindgren, David;
    • Gustafsson, Anders;
    • Wu, Phillip M.;
    • Monemar, Bo;
    • Samuelson, Lars
    Publication type:
    Article

  • Nitride Semiconductors.

    Published in:
    Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202300484
    By:
    • Kneissl, Michael;
    • Christen, Jürgen;
    • Hoffmann, Axel;
    • Monemar, Bo;
    • Wernicke, Tim;
    • Schwarz, Ulrich;
    • Haglund, Åsa;
    • Meneghini, Matteo
    Publication type:
    Article

  • Nitride Semiconductors.

    Published in:
    Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202300286
    By:
    • Kneissl, Michael;
    • Christen, Jürgen;
    • Hoffmann, Axel;
    • Monemar, Bo;
    • Wernicke, Tim;
    • Schwarz, Ulrich;
    • Haglund, Åsa;
    • Meneghini, Matteo
    Publication type:
    Article

  • Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates.

    Published in:
    Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900581
    By:
    • Delgado Carrascon, Rosalia;
    • Tran, Dat Quoc;
    • Sukkaew, Pitsiri;
    • Mock, Alyssa;
    • Ciechonski, Rafal;
    • Ohlsson, Jonas;
    • Zhu, Yadan;
    • Hultin, Olof;
    • Monemar, Bo;
    • Paskov, Plamen P.;
    • Samuelson, Lars;
    • Darakchieva, Vanya
    Publication type:
    Article