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Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results.
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- Technical Physics, 2015, v. 60, n. 9, p. 1335, doi. 10.1134/S106378421509008X
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Influence of the Laser Pulse Annealing of the Silicon Implanted with Indium and Arsenic Ions on its Optical and Structural Properties.
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- Journal of Engineering Physics & Thermophysics, 2024, v. 97, n. 3, p. 745, doi. 10.1007/s10891-024-02946-7
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- Article