Works by Mo, Cai-ping

Structural design and fabrication of 830 nm GaAsP/AlGaAs low polarization superluminescent diode with tensile-strained wells.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 12, p. 10102, doi. 10.1007/s10854-018-9055-7

By:

• Liu, Shang-jun;
• Zhou, Yong;
• Zhou, Shuai;
• Mo, Cai-ping;
• Zhao, Hong;
• Ding, Shi-hao;
• Tian, Kun;
• Tang, Zu-rong

Publication type:

Article