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Light-Emitting AlGaAs/GaAs Diodes Based on InGaAs Strain-Compensated Quantum Wells with Minimized Internal Losses Caused by 940-nm Radiation Absorption.
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- Crystallography Reports, 2024, v. 69, n. 4, p. 620, doi. 10.1134/S1063774524601485
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- Article
InGaAs metamorphic laser (1064 nm) power converters with over 40% efficiency.
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- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 173, doi. 10.1049/el.2016.4308
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- Article
Epitaxial Heterostructures of the Active Region for Near-Infrared LEDs.
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- Semiconductors, 2024, v. 58, n. 3, p. 263, doi. 10.1134/S1063782624030138
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- Article
Effect of Temperature on Current Through Various Recombination Channels in GaAs Solar Cells with GalnAs Quantum Dots.
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- Semiconductors, 2024, v. 58, n. 3, p. 244, doi. 10.1134/S1063782624030102
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- Article
Determination of the Temperature and Thermal Resistance of a Half-Disk Laser Diode by Measuring Pulsed Current-Voltage Characteristics.
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- Semiconductors, 2024, v. 58, n. 2, p. 191, doi. 10.1134/S1063782624020179
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- Article
Selective Area Epitaxy of InP/GaInP<sub>2</sub>Quantum Dots from Metal-Organic Compounds.
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- Semiconductors, 2024, v. 58, n. 2, p. 187, doi. 10.1134/S1063782624020167
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- Article
Model for Speed Performance of Quantum-Dot Waveguide Photodiode.
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- Semiconductors, 2023, v. 57, n. 13, p. 632, doi. 10.1134/S1063782623050184
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- Article
Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers.
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- Semiconductors, 2023, v. 57, n. 13, p. 604, doi. 10.1134/S1063782623030120
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- Article
Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots.
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- Semiconductors, 2023, v. 57, n. 13, p. 594, doi. 10.1134/S1063782623050093
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- Article
Internal Loss in Diode Lasers with Quantum Well-Dots.
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- Semiconductors, 2023, v. 57, n. 11, p. 513, doi. 10.1134/S1063782623090191
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- Article
Relationship between Wavelength and Gain in Lasers Based on Quantum Wells, Dots, and Well-Dots.
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- Semiconductors, 2023, v. 57, n. 12, p. 539, doi. 10.1134/S1063782623080079
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- Article
Temperature Dependencies of Radiative and Nonradiative Carrier Lifetimes in InGaAs Quantum Well-Dots.
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- Semiconductors, 2023, v. 57, n. 11, p. 488, doi. 10.1134/S1063782623080110
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- Article
High Efficiency (EQE = 37.5%) Infrared (850 nm) Light-Emitting Diodes with Bragg and Mirror Reflectors.
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- Semiconductors, 2023, v. 57, n. 5, p. 252, doi. 10.1134/S106378262307014X
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- Article
Bimodality in the Electroluminescence Spectra of InGaAs Quantum Well–Dot Nanostructures.
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- Semiconductors, 2022, v. 56, n. 6, p. 329, doi. 10.1134/S106378262207003X
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- Article
Infrared (850 nm) Light-Emitting Diodes with Multiple InGaAs Quantum Wells and "Back" Reflector.
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- Semiconductors, 2021, v. 55, n. 8, p. 686, doi. 10.1134/S1063782621080121
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- Article
Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots.
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- Semiconductors, 2021, v. 55, n. 3, p. 333, doi. 10.1134/S1063782621030167
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- Article
Comparative Analysis of the Optical and Physical Properties of InAs and In0.8Ga0.2As Quantum Dots and Solar Cells Based on them.
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- Semiconductors, 2020, v. 54, n. 10, p. 1267, doi. 10.1134/S1063782620100255
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- Article
Ultimate Lasing Temperature of Microdisk Lasers.
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- Semiconductors, 2020, v. 54, n. 6, p. 677, doi. 10.1134/S1063782620060172
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- Article
Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters.
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- Semiconductors, 2020, v. 54, n. 4, p. 476, doi. 10.1134/S1063782620040053
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- Article
Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells.
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- Semiconductors, 2019, v. 53, n. 11, p. 1535, doi. 10.1134/S1063782619110149
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- Article
Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality.
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- Semiconductors, 2019, v. 53, n. 11, p. 1489, doi. 10.1134/S1063782619110150
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- Article
Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation.
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- Semiconductors, 2019, v. 53, n. 8, p. 1099, doi. 10.1134/S1063782619080220
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- Article
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters.
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- Semiconductors, 2019, v. 53, n. 8, p. 1110, doi. 10.1134/S1063782619080116
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- Article
Diode Lasers with Near-Surface Active Region.
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- Semiconductors, 2018, v. 52, n. 14, p. 1901, doi. 10.1134/S1063782618140233
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- Article
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides.
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- Semiconductors, 2018, v. 52, n. 11, p. 1462, doi. 10.1134/S1063782618110283
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- Article
Multilayer Quantum Well-Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters.
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- Semiconductors, 2018, v. 52, n. 10, p. 1249, doi. 10.1134/S1063782618100147
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- Article
Recombination in GaAs p-i-n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities.
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- Semiconductors, 2018, v. 52, n. 10, p. 1244, doi. 10.1134/S1063782618100135
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- Article
In<sub>0.8</sub>Ga<sub>0.2</sub>As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties.
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- Semiconductors, 2018, v. 52, n. 7, p. 870, doi. 10.1134/S1063782618070199
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- Article
Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy.
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- Semiconductors, 2018, v. 52, n. 4, p. 497, doi. 10.1134/S1063782618040206
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- Article
Bimodality in Arrays of InGaAs Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates.
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- Semiconductors, 2018, v. 52, n. 1, p. 53, doi. 10.1134/S1063782618010153
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Experimental studies of the effects of atomic ordering in epitaxial GaInP alloys on their structural and morphological properties.
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- Semiconductors, 2017, v. 51, n. 8, p. 1087, doi. 10.1134/S1063782617080280
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- Article
InAs QDs in a metamorphic InGaAs matrix, grown by MOCVD.
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- Semiconductors, 2017, v. 51, n. 5, p. 672, doi. 10.1134/S1063782617050189
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Optical properties of hybrid quantum-well-dots nanostructures grown by MOCVD.
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- Semiconductors, 2017, v. 51, n. 3, p. 357, doi. 10.1134/S1063782617030198
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- Article
Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD.
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- Semiconductors, 2017, v. 51, n. 1, p. 93, doi. 10.1134/S1063782617010201
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Optical properties of hybrid quantum-confined structures with high absorbance.
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- Semiconductors, 2016, v. 50, n. 9, p. 1180, doi. 10.1134/S1063782616090189
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- Article
Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures.
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- Semiconductors, 2016, v. 50, n. 9, p. 1220, doi. 10.1134/S1063782616090128
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- Article
On current spreading in solar cells: a two-parameter tube model.
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- Semiconductors, 2016, v. 50, n. 7, p. 970, doi. 10.1134/S1063782616070162
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- Article
Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates.
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- Semiconductors, 2016, v. 50, n. 4, p. 517, doi. 10.1134/S1063782616040163
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Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm.
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- Semiconductors, 2016, v. 50, n. 1, p. 125, doi. 10.1134/S1063782616010085
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- Article
Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers.
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- Semiconductors, 2015, v. 49, n. 8, p. 1090, doi. 10.1134/S106378261508014X
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- Article
Site-Controlled Growth of Single InP QDs.
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- Semiconductors, 2015, v. 49, n. 8, p. 1095, doi. 10.1134/S1063782615080230
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Determination of the technological growth parameters in the InAs-GaAs system for the MOCVD synthesis of 'Multimodal' InAs QDs.
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- Semiconductors, 2015, v. 49, n. 8, p. 1111, doi. 10.1134/S1063782615080175
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Estimation of the potential efficiency of a multijunction solar cell at a limit balance of photogenerated currents.
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- Semiconductors, 2015, v. 49, n. 5, p. 668, doi. 10.1134/S1063782615050164
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Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell.
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- Semiconductors, 2014, v. 48, n. 5, p. 653, doi. 10.1134/S1063782614050133
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Local triboelectrification of an <i>n</i>-GaAs surface using the tip of an atomic-force microscope.
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- Semiconductors, 2013, v. 47, n. 9, p. 1170, doi. 10.1134/S1063782613090054
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Picosecond internal Q-switching mode correlates with laser diode breakdown voltage.
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- Semiconductors, 2013, v. 47, n. 3, p. 406, doi. 10.1134/S1063782613030159
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- Article
Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors.
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- Semiconductors, 2010, v. 44, n. 12, p. 1600, doi. 10.1134/S1063782610120122
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Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells.
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- Semiconductors, 2010, v. 44, n. 11, p. 1520, doi. 10.1134/S106378261011028X
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- Article
Study of minority carrier diffusion lengths in photoactive layers of multijunction solar cells.
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- Semiconductors, 2010, v. 44, n. 8, p. 1084, doi. 10.1134/S1063782610080233
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- Article
Properties of interfaces in GaInP solar cells.
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- Semiconductors, 2009, v. 43, n. 10, p. 1363, doi. 10.1134/S1063782609100194
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- Article