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Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots.
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- Semiconductors, 2023, v. 57, n. 13, p. 594, doi. 10.1134/S1063782623050093
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Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers.
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- Semiconductors, 2023, v. 57, n. 13, p. 604, doi. 10.1134/S1063782623030120
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Model for Speed Performance of Quantum-Dot Waveguide Photodiode.
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- Semiconductors, 2023, v. 57, n. 13, p. 632, doi. 10.1134/S1063782623050184
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Relationship between Wavelength and Gain in Lasers Based on Quantum Wells, Dots, and Well-Dots.
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- Semiconductors, 2023, v. 57, n. 12, p. 539, doi. 10.1134/S1063782623080079
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- Article
Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy.
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- Technical Physics Letters, 2023, v. 49, p. S163, doi. 10.1134/S1063785023900649
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High-Efficiency GaInP/GaAs Photoconverters of the 600 nm Laser Line.
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- Technical Physics Letters, 2023, v. 49, p. S75, doi. 10.1134/S1063785023900418
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A GalnP-Based Photo-Converter of Laser Radiation with an Efficiency of 46.7% at a Wavelength of 600 nm.
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- Technical Physics Letters, 2023, v. 49, p. S78, doi. 10.1134/S106378502390042X
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Increasing the Efficiency of Triple-Junction Solar Cells Due to the Metamorphic InGaAs Subcell.
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- Technical Physics Letters, 2023, v. 49, p. S81, doi. 10.1134/S1063785023900431
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- Article
Investigation of the Photoelectric Characteristics of GaAs Solar Cells with Different InGaAs Quantum Dot Array Positioning in the i-Region.
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- Technical Physics Letters, 2023, v. 49, p. S125, doi. 10.1134/S1063785023900546
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- Article
Temperature Dependencies of Radiative and Nonradiative Carrier Lifetimes in InGaAs Quantum Well-Dots.
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- Semiconductors, 2023, v. 57, n. 11, p. 488, doi. 10.1134/S1063782623080110
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- Article
Internal Loss in Diode Lasers with Quantum Well-Dots.
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- Semiconductors, 2023, v. 57, n. 11, p. 513, doi. 10.1134/S1063782623090191
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- Article
High Efficiency (EQE = 37.5%) Infrared (850 nm) Light-Emitting Diodes with Bragg and Mirror Reflectors.
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- Semiconductors, 2023, v. 57, n. 5, p. 252, doi. 10.1134/S106378262307014X
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- Article
Bimodality in the Electroluminescence Spectra of InGaAs Quantum Well–Dot Nanostructures.
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- Semiconductors, 2022, v. 56, n. 6, p. 329, doi. 10.1134/S106378262207003X
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- Article
High-Speed Photodetectors Based on InGaAs/GaAs Quantum Well–Dots.
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- Technical Physics Letters, 2022, v. 48, n. 3, p. 161, doi. 10.1134/S1063785022040186
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- Article
Increasing the Optical Power of InGaAs/GaAs Microdisk Lasers Transferred to a Silicon Substrate by Thermal Compression.
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- Technical Physics Letters, 2022, v. 48, n. 2, p. 90, doi. 10.1134/S1063785022030105
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- Article
Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD.
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- Technical Physics Letters, 2021, v. 47, n. 10, p. 730, doi. 10.1134/S1063785021070270
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- Article
Energy Consumption at High-Frequency Modulation of an Uncooled InGaAs/GaAs/AlGaAs Microdisk Laser.
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- Technical Physics Letters, 2021, v. 47, n. 9, p. 685, doi. 10.1134/S1063785021070142
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- Article
Infrared (850 nm) Light-Emitting Diodes with Multiple InGaAs Quantum Wells and "Back" Reflector.
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- Semiconductors, 2021, v. 55, n. 8, p. 686, doi. 10.1134/S1063782621080121
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- Article
Increasing the Efficiency of 520- to 540-nm Laser Radiation Photovoltaic Converters Based on GaInP/GaAs Heterostructures.
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- Technical Physics Letters, 2021, v. 47, n. 4, p. 290, doi. 10.1134/S106378502103024X
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- Article
Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots.
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- Semiconductors, 2021, v. 55, n. 3, p. 333, doi. 10.1134/S1063782621030167
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- Article
High-Speed Photodetectors for the 950–1100 nm Optical Range Based on In0.4Ga0.6As/GaAs Quantum Well-Dot Nanostructures.
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- Technical Physics Letters, 2020, v. 46, n. 12, p. 1219, doi. 10.1134/S106378502012024X
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Comparative Analysis of the Optical and Physical Properties of InAs and In0.8Ga0.2As Quantum Dots and Solar Cells Based on them.
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- Semiconductors, 2020, v. 54, n. 10, p. 1267, doi. 10.1134/S1063782620100255
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- Article
Laser Power Converter Modules with a Wavelength of 809–850 nm.
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- Technical Physics, 2020, v. 65, n. 10, p. 1690, doi. 10.1134/S1063784220100096
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- Article
A Micro Optocoupler Based on a Microdisk Laser and a Photodetector with an Active Region Based on Quantum Well-Dots.
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- Technical Physics Letters, 2020, v. 46, n. 7, p. 629, doi. 10.1134/S1063785020070111
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- Article
Ultimate Lasing Temperature of Microdisk Lasers.
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- Semiconductors, 2020, v. 54, n. 6, p. 677, doi. 10.1134/S1063782620060172
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- Article
The Effect of Self-Heating on the Modulation Characteristics of a Microdisk Laser.
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- Technical Physics Letters, 2020, v. 46, n. 6, p. 515, doi. 10.1134/S1063785020060152
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- Article
The Influence of the Number of Rows of GaInAs Quantum Objects on the Saturation Current of GaAs Photoconverters.
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- Technical Physics Letters, 2020, v. 46, n. 6, p. 599, doi. 10.1134/S106378502006022X
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- Article
Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters.
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- Semiconductors, 2020, v. 54, n. 4, p. 476, doi. 10.1134/S1063782620040053
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- Article
Finding the Energy Gap of Ga1 –xInxAs p–n Junctions on a Metamorphic Buffer from the Photocurrent Spectrum.
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- Technical Physics Letters, 2020, v. 46, n. 4, p. 332, doi. 10.1134/S1063785020040112
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- Article
Experimental and Theoretical Examination of the Photosensitivity Spectra of Structures with In0.4Ga0.6As Quantum Well-Dots of the Optical Range (900–1050 nm).
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- Technical Physics Letters, 2020, v. 46, n. 3, p. 203, doi. 10.1134/S1063785020030116
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- Article
Increasing the Photocurrent of a Ga(In)As Subcell in Multijunction Solar Cells Based on GaInP/Ga(In)As/Ge Heterostructure.
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- Technical Physics Letters, 2019, v. 45, n. 12, p. 1258, doi. 10.1134/S1063785019120253
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- Article
Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality.
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- Semiconductors, 2019, v. 53, n. 11, p. 1489, doi. 10.1134/S1063782619110150
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- Article
Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells.
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- Semiconductors, 2019, v. 53, n. 11, p. 1535, doi. 10.1134/S1063782619110149
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Anomalies in Photovoltaic Characteristics of Multijunction Solar Cells at Ultrahigh Solar Light Concentrations.
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- Technical Physics Letters, 2019, v. 45, n. 11, p. 1100, doi. 10.1134/S1063785019110099
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- Article
Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots.
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- Technical Physics Letters, 2019, v. 45, n. 10, p. 994, doi. 10.1134/S1063785019100158
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- Article
Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation.
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- Semiconductors, 2019, v. 53, n. 8, p. 1099, doi. 10.1134/S1063782619080220
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- Article
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters.
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- Semiconductors, 2019, v. 53, n. 8, p. 1110, doi. 10.1134/S1063782619080116
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- Article
Energy Consumption for High-Frequency Switching of a Quantum-Dot Microdisk Laser.
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- Technical Physics Letters, 2019, v. 45, n. 8, p. 847, doi. 10.1134/S1063785019080315
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- Article
Lasers Based on Quantum Well-Dots Emitting in the 980- and 1080-nm Optical Ranges.
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- Technical Physics Letters, 2019, v. 45, n. 2, p. 163, doi. 10.1134/S1063785019020305
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- Article
Diode Lasers with Near-Surface Active Region.
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- Semiconductors, 2018, v. 52, n. 14, p. 1901, doi. 10.1134/S1063782618140233
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- Article
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides.
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- Semiconductors, 2018, v. 52, n. 11, p. 1462, doi. 10.1134/S1063782618110283
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- Article
An Antireflection Coating of a Germanium Subcell in GaInP/GaAs/Ge Solar Cells.
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- Technical Physics Letters, 2018, v. 44, n. 11, p. 1042, doi. 10.1134/S1063785018110263
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- Article
Recombination in GaAs p-i-n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities.
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- Semiconductors, 2018, v. 52, n. 10, p. 1244, doi. 10.1134/S1063782618100135
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- Article
Multilayer Quantum Well-Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters.
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- Semiconductors, 2018, v. 52, n. 10, p. 1249, doi. 10.1134/S1063782618100147
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- Article
Optical Properties of InGaAs/InAlAs Metamorphic Nanoheterostructures for Photovoltaic Converters of Laser and Solar Radiation.
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- Technical Physics Letters, 2018, v. 44, n. 10, p. 877, doi. 10.1134/S1063785018100061
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- Article
Power Characteristics and Temperature Dependence of the Angular Beam Divergence of Lasers with a Near-Surface Active Region.
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- Technical Physics Letters, 2018, v. 44, n. 8, p. 675, doi. 10.1134/S1063785018080151
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- Article
In<sub>0.8</sub>Ga<sub>0.2</sub>As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties.
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- Semiconductors, 2018, v. 52, n. 7, p. 870, doi. 10.1134/S1063782618070199
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- Article
Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy.
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- Semiconductors, 2018, v. 52, n. 4, p. 497, doi. 10.1134/S1063782618040206
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- Article
Bimodality in Arrays of InGaAs Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates.
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- Semiconductors, 2018, v. 52, n. 1, p. 53, doi. 10.1134/S1063782618010153
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Experimental studies of the effects of atomic ordering in epitaxial GaInP alloys on their structural and morphological properties.
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- Semiconductors, 2017, v. 51, n. 8, p. 1087, doi. 10.1134/S1063782617080280
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- Article