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Growth of Ga 0.70 In 0.30 N/GaN Quantum-Wells on a ScAlMgO 4 (0001) Substrate with an Ex - Situ Sputtered-AlN Buffer Layer.
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- Materials (1996-1944), 2024, v. 17, n. 1, p. 167, doi. 10.3390/ma17010167
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Extracting the inherent ideality factor of a diode from electrical current–voltage characteristics.
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- Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 23, p. 1, doi. 10.1049/ell2.13046
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- Article
Understanding and evaluating the mean photon energy and the external quantum efficiency of light‐emitting diodes.
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- IET Optoelectronics (Wiley-Blackwell), 2023, v. 17, n. 1, p. 32, doi. 10.1049/ote2.12083
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- Article
Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis.
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- Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-74585-w
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- Article