Works by Min'ko, V. I.

Results: 7

Effect of chemical treatment on photoluminescence spectra of SiO x layers with built-in Si nanocrystals.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1248, doi. 10.1134/S1063782607100223

By:

Indutnyy, I. Z.;
Maǐdanchuk, I. Yu.;
Min'ko, V. I.;
Shepelyavyǐ, P. E.;
Dan'ko, V. A.

Publication type:

Article

Kinetics of Structural and Phase Transformations in Thin SiOx Films in the Course of a Rapid Thermal Annealing.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1197, doi. 10.1134/1.2085270

By:

Dan'ko, V. A.;
Indutnyı, I. Z.;
Lysenko, V. S.;
Maıdanchuk, I. Yu.;
Min'ko, V. I.;
Nazarov, A. N.;
Tkachenko, A. S.;
Shepelyavyı, P. E.

Publication type:

Article

Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 2, p. 215, doi. 10.15407/spqeo22.02.215

By:

Hreshchuk, O. M.;
Yukhymchuk, V. O.;
Dzhagan, V. M.;
Danko, V. A.;
Min’ko, V. I.;
Indutnyi, I. Z.;
Shepeliavyi, P. E.;
Lytvyn, P. M.;
Sheregii, E.;
Prokhorenko, S.;
Polit, J.;
Zak, D.;
Płoch, D.;
Valakh, M. Ya.

Publication type:

Article

Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 2, p. 152, doi. 10.15407/spqeo21.02.152

By:

Lytvyn, P. M.;
Malyuta, S. V.;
Indutnyi, I. Z.;
Efremov, A. A.;
Slobodyan, O. V.;
Min'ko, V. I.;
Nazarov, A. N.;
Borysov, O. V.;
Prokopenko, I. V.

Publication type:

Article

Effect of acetone vapor treatment on photoluminescence of porous nc-Si-SiOx nanostructures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 2, p. 105

By:

Indutnyi, I. Z.;
Michailovska, K. V.;
Min'ko, V. I.;
Shepeliavyi, P. E.

Publication type:

Article

Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 1, p. 40, doi. 10.15407/spqeo10.01.040

By:

Min'ko, V. I.;
Shepeliavyi, P. E.;
Indutnyy, I. Z.;
Litvin, O. S.

Publication type:

Article

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 9, doi. 10.15407/spqeo9.01.009

By:

Indutnyy, I. Z.;
Lysenko, V. S.;
Maidanchuk, I. Yu.;
Min’ko, V. I.;
Nazarov, A. N.;
Tkachenko, A. S.;
Shepeliavyi, P. E.;
Dan’ko, V. A.

Publication type:

Article

Works by Min'ko, V. I.

Effect of chemical treatment on photoluminescence spectra of SiO<sub> x </sub> layers with built-in Si nanocrystals.

Kinetics of Structural and Phase Transformations in Thin SiO<sub>x</sub> Films in the Course of a Rapid Thermal Annealing.

Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography.

Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist.

Effect of acetone vapor treatment on photoluminescence of porous nc-Si-SiO<sub>x</sub> nanostructures.

Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist.

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiO<sub>x</sub> films.