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The Effect of Annealing on the Electroluminescence of SiO[sub 2] Layers with Excess Silicon.
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- Technical Physics Letters, 2004, v. 30, n. 2, p. 85, doi. 10.1134/1.1666947
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- Article
Near Ultraviolet Diagnostics of Oxide Layers in Si–SiO[sub 2] Structures.
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- Technical Physics Letters, 2003, v. 29, n. 9, p. 725, doi. 10.1134/1.1615547
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- Article
Electroluminescence of Si–SiO[sub 2]–Si[sub 3]N[sub 4] Structures.
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- Technical Physics Letters, 2002, v. 28, n. 12, p. 978, doi. 10.1134/1.1535507
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- Article
The Energy Position of Electrically Active Centers in the Oxide Layer of SIMOX Structures.
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- Technical Physics Letters, 2002, v. 28, n. 12, p. 983, doi. 10.1134/1.1535509
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- Article
The Oxide Layer Charging in SIMOX Structures.
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- Technical Physics Letters, 2001, v. 27, n. 5, p. 422, doi. 10.1134/1.1376771
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- Article
Electric Field Affects the Charge State in Ion-Implanted Si–SiO[sub 2] Structures.
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- Technical Physics Letters, 2001, v. 27, n. 2, p. 129, doi. 10.1134/1.1352770
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- Article
Role of Masking Oxide on the Silicon Surface on Defect Formation in SIMOX Structures.
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- Technical Physics, 2002, v. 47, n. 5, p. 574, doi. 10.1134/1.1479985
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- Article
Formation of Defects in the Oxide Layer of Ion-Irradiated Si/SiO[sub 2] Structures.
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- Technical Physics, 2002, v. 47, n. 5, p. 569, doi. 10.1134/1.1479984
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- Article