Works by Mil’vidskii, M.

Results: 10

Theoretical and Experimental Study of the Formation of Grown-in and As-Grown Microdefects in Dislocation-Free Silicon Single Crystals Grown by the Czochralski Method.

Published in:

Crystallography Reports, 2005, v. 50, n. 7, p. S159, doi. 10.1134/1.2133994

By:

Verezub, N. A.;
Prostomolotov, A. I.;
Mezhennyǐ, M. V.;
Mil'vidskiǐ, M. G.;
Reznik, V. Ya.

Publication type:

Article

Thermally Stimulated Relaxation of Misfit Strains in Si<sub>1 – x</sub>Ge<sub>x</sub>/Si(100) Heterostructures with Different Buffer Layers.

Published in:

Crystallography Reports, 2005, v. 50, n. 6, p. 1020, doi. 10.1134/1.2132412

By:

Yugova, T. G.;
Mil'vidskiǐ, M. G.;
Rzaev, M. M.;
Schäffler, F.

Publication type:

Article

Effect of the Sign of Misfit Strain on the Formation of a Dislocation Structure in SiGe Epitaxial Layers Grown on Si and Ge Substrates.

Published in:

Crystallography Reports, 2005, v. 50, n. 5, p. 849, doi. 10.1134/1.2049407

By:

Vdovin, V. I.;
Mil'vidskiǐ, M. G.;
Yugova, T. G.

Publication type:

Article

Earth Optimization of Space Experiment on Growth of Germanium by Floating-Zone Technique with the Use of Rotating Magnetic Fields.

Published in:

Crystallography Reports, 2001, v. 46, n. 1, p. 148, doi. 10.1134/1.1343144

By:

Kartavykh, A. V.;
Kopeliovich, É. S.;
Mil’vidskiı, M. G.;
Rakov, V. V.

Publication type:

Article

Vitalii Ivanovich Stafeev (on his 80th birtday).

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 130, doi. 10.1134/S1063782609010254

By:

Alferov, Zh. I.;
Aseev, A. L.;
Gippius, A. A.;
Gulyaev, Yu. V.;
Ivanov-Omskii, V.I.;
Krokhin, O. M.;
Kaplyanskii, A. A.;
Mil'vidskii, M. G.;
Pozhela, Yu. K.;
Pokrovskii, Ya. E.;
Suris, R. A.;
Filachev, A. M.

Publication type:

Article

Sergeı Petrovich Solov’ev (1932–2000).

Published in:

Semiconductors, 2000, v. 34, n. 12, p. 1410, doi. 10.1134/1.1331801

By:

Brudnyı, V. N.;
Bublik, V. T.;
Goshitskiı, B. N.;
Emtsev, V. V.;
Kazanskiı, Yu. A.;
Konopleva, R. F.;
Konobeev, Yu. V.;
Kolin, N. G.;
Kuz’min, I. I.;
Mil’vidskiı, M. G.;
Ozerov, R. P.;
Osvenskiı, V. B.;
Plotnikov, V. G.;
Simonov, A. P.;
Smirnov, L. S.;
Kharchenko, V. A.

Publication type:

Article

Nanometer-size atomic clusters in semiconductors--a new approach to tailoring material properties

Published in:

Semiconductors, 1998, v. 32, n. 5, p. 257

By:

Mil'vidskii, M. G.;
Chaldyshev, V. V.

Publication type:

Article

Evaluating intrinsic deformations in oxygen-containing precipitates.

Published in:

Technical Physics Letters, 2008, v. 34, n. 2, p. 106, doi. 10.1134/S1063785008020065

By:

Goldstein, R. V.;
Ustinov, K. B.;
Shushpannikov, P. S.;
Mezhennyi, M. V.;
Mil'vidskiĭ, M. G.;
Reznik, V. Ya.

Publication type:

Article

Dislocation generation in heat-treated nitrogen-doped silicon wafers when applying external loads.

Published in:

Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2009, v. 3, n. 5, p. 747, doi. 10.1134/S1027451009050140

By:

Mezhennyi, M.;
Mil’vidskii, M.;
Reznik, V.

Publication type:

Article

Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 806, doi. 10.1134/1.1187256

By:

Kunitsyn, A. E.;
Chaldyshev, V. V.;
Mil’vidskaya, A. G.;
Mil’vidskiı, M. G.

Publication type:

Article