Works by Mil’vidskii, M.

Results: 10

Theoretical and Experimental Study of the Formation of Grown-in and As-Grown Microdefects in Dislocation-Free Silicon Single Crystals Grown by the Czochralski Method.
Published in:
Crystallography Reports, 2005, v. 50, n. 7, p. S159, doi. 10.1134/1.2133994
By:
- Verezub, N. A.;
- Prostomolotov, A. I.;
- Mezhennyǐ, M. V.;
- Mil'vidskiǐ, M. G.;
- Reznik, V. Ya.
Publication type:
Article
Thermally Stimulated Relaxation of Misfit Strains in Si<sub>1 – x</sub>Ge<sub>x</sub>/Si(100) Heterostructures with Different Buffer Layers.
Published in:
Crystallography Reports, 2005, v. 50, n. 6, p. 1020, doi. 10.1134/1.2132412
By:
- Yugova, T. G.;
- Mil'vidskiǐ, M. G.;
- Rzaev, M. M.;
- Schäffler, F.
Publication type:
Article
Effect of the Sign of Misfit Strain on the Formation of a Dislocation Structure in SiGe Epitaxial Layers Grown on Si and Ge Substrates.
Published in:
Crystallography Reports, 2005, v. 50, n. 5, p. 849, doi. 10.1134/1.2049407
By:
- Vdovin, V. I.;
- Mil'vidskiǐ, M. G.;
- Yugova, T. G.
Publication type:
Article
Earth Optimization of Space Experiment on Growth of Germanium by Floating-Zone Technique with the Use of Rotating Magnetic Fields.
Published in:
Crystallography Reports, 2001, v. 46, n. 1, p. 148, doi. 10.1134/1.1343144
By:
- Kartavykh, A. V.;
- Kopeliovich, É. S.;
- Mil’vidskiı, M. G.;
- Rakov, V. V.
Publication type:
Article
Vitalii Ivanovich Stafeev (on his 80th birtday).
Published in:
Semiconductors, 2009, v. 43, n. 1, p. 130, doi. 10.1134/S1063782609010254
By:
- Alferov, Zh. I.;
- Aseev, A. L.;
- Gippius, A. A.;
- Gulyaev, Yu. V.;
- Ivanov-Omskii, V.I.;
- Krokhin, O. M.;
- Kaplyanskii, A. A.;
- Mil'vidskii, M. G.;
- Pozhela, Yu. K.;
- Pokrovskii, Ya. E.;
- Suris, R. A.;
- Filachev, A. M.
Publication type:
Article
Sergeı Petrovich Solov’ev (1932–2000).
Published in:
Semiconductors, 2000, v. 34, n. 12, p. 1410, doi. 10.1134/1.1331801
By:
- Brudnyı, V. N.;
- Bublik, V. T.;
- Goshitskiı, B. N.;
- Emtsev, V. V.;
- Kazanskiı, Yu. A.;
- Konopleva, R. F.;
- Konobeev, Yu. V.;
- Kolin, N. G.;
- Kuz’min, I. I.;
- Mil’vidskiı, M. G.;
- Ozerov, R. P.;
- Osvenskiı, V. B.;
- Plotnikov, V. G.;
- Simonov, A. P.;
- Smirnov, L. S.;
- Kharchenko, V. A.
Publication type:
Article
Nanometer-size atomic clusters in semiconductors--a new approach to tailoring material properties
Published in:
Semiconductors, 1998, v. 32, n. 5, p. 257
By:
- Mil'vidskii, M. G.;
- Chaldyshev, V. V.
Publication type:
Article
Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt.
Published in:
Semiconductors, 1997, v. 31, n. 8, p. 806, doi. 10.1134/1.1187256
By:
- Kunitsyn, A. E.;
- Chaldyshev, V. V.;
- Mil’vidskaya, A. G.;
- Mil’vidskiı, M. G.
Publication type:
Article
Evaluating intrinsic deformations in oxygen-containing precipitates.
Published in:
Technical Physics Letters, 2008, v. 34, n. 2, p. 106, doi. 10.1134/S1063785008020065
By:
- Goldstein, R. V.;
- Ustinov, K. B.;
- Shushpannikov, P. S.;
- Mezhennyi, M. V.;
- Mil'vidskiĭ, M. G.;
- Reznik, V. Ya.
Publication type:
Article
Dislocation generation in heat-treated nitrogen-doped silicon wafers when applying external loads.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2009, v. 3, n. 5, p. 747, doi. 10.1134/S1027451009050140
By:
- Mezhennyi, M.;
- Mil’vidskii, M.;
- Reznik, V.
Publication type:
Article