Found: 10
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Vitalii Ivanovich Stafeev (on his 80th birtday).
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- Semiconductors, 2009, v. 43, n. 1, p. 130, doi. 10.1134/S1063782609010254
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- Article
Sergeı Petrovich Solov’ev (1932–2000).
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- Semiconductors, 2000, v. 34, n. 12, p. 1410, doi. 10.1134/1.1331801
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- Article
Nanometer-size atomic clusters in semiconductors--a new approach to tailoring material properties
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- Semiconductors, 1998, v. 32, n. 5, p. 257
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- Article
Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt.
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- Semiconductors, 1997, v. 31, n. 8, p. 806, doi. 10.1134/1.1187256
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- Article
Theoretical and Experimental Study of the Formation of Grown-in and As-Grown Microdefects in Dislocation-Free Silicon Single Crystals Grown by the Czochralski Method.
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- Crystallography Reports, 2005, v. 50, n. 7, p. S159, doi. 10.1134/1.2133994
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- Article
Thermally Stimulated Relaxation of Misfit Strains in Si<sub>1 – x</sub>Ge<sub>x</sub>/Si(100) Heterostructures with Different Buffer Layers.
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- Crystallography Reports, 2005, v. 50, n. 6, p. 1020, doi. 10.1134/1.2132412
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- Article
Effect of the Sign of Misfit Strain on the Formation of a Dislocation Structure in SiGe Epitaxial Layers Grown on Si and Ge Substrates.
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- Crystallography Reports, 2005, v. 50, n. 5, p. 849, doi. 10.1134/1.2049407
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- Article
Earth Optimization of Space Experiment on Growth of Germanium by Floating-Zone Technique with the Use of Rotating Magnetic Fields.
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- Crystallography Reports, 2001, v. 46, n. 1, p. 148, doi. 10.1134/1.1343144
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- Article
Dislocation generation in heat-treated nitrogen-doped silicon wafers when applying external loads.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2009, v. 3, n. 5, p. 747, doi. 10.1134/S1027451009050140
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- Article
Evaluating intrinsic deformations in oxygen-containing precipitates.
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- Technical Physics Letters, 2008, v. 34, n. 2, p. 106, doi. 10.1134/S1063785008020065
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- Article