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Theoretical and Experimental Study of the Formation of Grown-in and As-Grown Microdefects in Dislocation-Free Silicon Single Crystals Grown by the Czochralski Method.
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- Crystallography Reports, 2005, v. 50, n. 7, p. S159, doi. 10.1134/1.2133994
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Thermally Stimulated Relaxation of Misfit Strains in Si<sub>1 – x</sub>Ge<sub>x</sub>/Si(100) Heterostructures with Different Buffer Layers.
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- Crystallography Reports, 2005, v. 50, n. 6, p. 1020, doi. 10.1134/1.2132412
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- Article
Effect of the Sign of Misfit Strain on the Formation of a Dislocation Structure in SiGe Epitaxial Layers Grown on Si and Ge Substrates.
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- Crystallography Reports, 2005, v. 50, n. 5, p. 849, doi. 10.1134/1.2049407
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- Article