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Emission Regimes of 1.06 μm Spectral Bandwidth Two-Sectional Lasers with Quantum Dot Based Active Layer.
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- Technical Physics Letters, 2018, v. 44, n. 11, p. 965, doi. 10.1134/S1063785018110068
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- Article
Source of rectangular X-ray pulses for studying scintillators.
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- Technical Physics Letters, 2015, v. 41, n. 10, p. 971, doi. 10.1134/S1063785015100211
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- Article
High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm.
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- Technical Physics Letters, 2008, v. 34, n. 12, p. 1008, doi. 10.1134/S1063785008120055
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- Article
Metamorphic InAs quantum dots: Photoluminescence features related to cooperative phenomena in the quantum dot-matrix system.
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- Technical Physics Letters, 2007, v. 33, n. 7, p. 590, doi. 10.1134/S1063785007070152
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- Article
Stark effect in a multilayer system of coupled InAs/GaAs quantum dots.
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- Technical Physics Letters, 2007, v. 33, n. 6, p. 527, doi. 10.1134/S1063785007060247
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- Article
Optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices.
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- Technical Physics Letters, 2007, v. 33, n. 5, p. 384, doi. 10.1134/S1063785007050070
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- Article
Temperature-Induced Variation of the Emission Band Intensities of an SrAl[sub 12]O[sub 19]:Pr Phosphor.
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- Technical Physics Letters, 2002, v. 28, n. 12, p. 991, doi. 10.1134/1.1535512
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- Article
Molecular Beam Epitaxy of (Al)GaAsN Using Ammonia as a Source of Nitrogen.
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- Technical Physics Letters, 2002, v. 28, n. 6, p. 517, doi. 10.1134/1.1490977
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- Article
1.55–1.6μm Electroluminescence of GaAs Based Diode Structures with Quantum Dots.
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- Technical Physics Letters, 2001, v. 27, n. 9, p. 734, doi. 10.1134/1.1405243
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- Article
Measurement of Scintillator Parameters Using Pulsed X-ray Excitation.
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- Technical Physics Letters, 2000, v. 26, n. 8, p. 678, doi. 10.1134/1.1307811
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- Article
Emission and excitation spectra of ZnO:Ga and ZnO:Ga,N ceramics.
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- Optics & Spectroscopy, 2008, v. 105, n. 6, p. 908, doi. 10.1134/S0030400X08120151
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- Article
Long-Term Stability of Long-Wavelength (>1.25 μm) Quantum-Dot Lasers Fabricated on GaAs Substrates.
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- Technical Physics, 2003, v. 48, n. 1, p. 131, doi. 10.1134/1.1538744
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- Article
Modelocked quantum dot vertical external cavity surface emitting laser.
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- Applied Physics B: Lasers & Optics, 2008, v. 93, n. 4, p. 733, doi. 10.1007/s00340-008-3267-0
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- Article
A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges.
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- Applied Physics B: Lasers & Optics, 2008, v. 92, n. 4, p. 501, doi. 10.1007/s00340-008-3113-4
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- Article
Submonolayer Quantum Dots for High Speed Surface Emitting Lasers.
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- Nanoscale Research Letters, 2007, v. 2, n. 9, p. 417, doi. 10.1007/s11671-007-9078-0
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- Article
Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots.
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- Semiconductors, 2010, v. 44, n. 10, p. 1308, doi. 10.1134/S106378261010012X
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- Article
Interaction of electrons with optical phonons localized in a quantum well.
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- Semiconductors, 2009, v. 43, n. 12, p. 1590, doi. 10.1134/S1063782609120033
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- Article
Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K).
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- Semiconductors, 2009, v. 43, n. 5, p. 680, doi. 10.1134/S1063782609050261
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- Article
Resonance enhancement of spin-polarized electron emission.
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- Semiconductors, 2009, v. 43, n. 4, p. 463, doi. 10.1134/S1063782609040101
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- Article
Absorption in laser structures with coupled and uncoupled quantum dots in an electric field at room temperature.
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- Semiconductors, 2009, v. 43, n. 4, p. 490, doi. 10.1134/S1063782609040150
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- Article
AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs.
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- Semiconductors, 2009, v. 43, n. 4, p. 514, doi. 10.1134/S1063782609040204
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- Article
Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates.
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- Semiconductors, 2008, v. 42, n. 7, p. 805, doi. 10.1134/S1063782608070105
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- Article
The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots.
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- Semiconductors, 2007, v. 41, n. 10, p. 1224, doi. 10.1134/S1063782607100181
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- Article
Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs.
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- Semiconductors, 2006, v. 40, n. 10, p. 1232, doi. 10.1134/S1063782606100198
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- Article
VCSELs based on arrays of sub-monolayer InGaAs quantum dots.
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- Semiconductors, 2006, v. 40, n. 5, p. 615, doi. 10.1134/S1063782606050186
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- Article
InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4–1.8 μm.
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- Semiconductors, 2006, v. 40, n. 3, p. 342, doi. 10.1134/S106378260603016X
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- Article
Coupling of electron states in the InAs/GaAs quantum dot molecule.
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- Semiconductors, 2006, v. 40, n. 3, p. 331, doi. 10.1134/S1063782606030146
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- Article
Continuous-wave Lasing of Single-Mode Metamorphic Quantum Dot Lasers for the 1.5-μm Spectral Region.
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- Semiconductors, 2005, v. 39, n. 12, p. 1415, doi. 10.1134/1.2140316
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- Article
Effect of p-Doping of the Active Region on the Temperature Stability of InAs/GaAs QD Lasers.
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- Semiconductors, 2005, v. 39, n. 4, p. 477, doi. 10.1134/1.1900266
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- Article
Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates.
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- Semiconductors, 2003, v. 37, n. 12, p. 1411, doi. 10.1134/1.1634663
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- Article
Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix.
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- Semiconductors, 2003, v. 37, n. 5, p. 559, doi. 10.1134/1.1575361
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- Article
High Efficiency (η[sub D] > 80%) Long Wavelength (λ > 1.25 μm) Quantum Dot Diode Lasers on GaAs Substrates.
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- Semiconductors, 2002, v. 36, n. 11, p. 1315, doi. 10.1134/1.1521237
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- Article
The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix.
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- Semiconductors, 2002, v. 36, n. 9, p. 1020, doi. 10.1134/1.1507285
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- Article
Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3μm Wavelength Range.
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- Semiconductors, 2000, v. 34, n. 5, p. 594, doi. 10.1134/1.1188034
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- Article
Power Conversion Efficiency of Quantum Dot Laser Diodes.
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- Semiconductors, 2000, v. 34, n. 5, p. 609, doi. 10.1134/1.1188038
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- Article
A Spatially Single-Mode Laser for a Range of 1.25–1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate.
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- Semiconductors, 2000, v. 34, n. 1, p. 119, doi. 10.1134/1.1187954
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- Article
X-Ray diffraction analysis of multilayer InAs–GaAs heterostructures with InAs quantum dots.
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- Semiconductors, 1999, v. 33, n. 11, p. 1229, doi. 10.1134/1.1187855
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- Article
Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures.
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- Semiconductors, 1999, v. 33, n. 8, p. 929, doi. 10.1134/1.1187631
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- Article
Small-signal cross-gain modulation and crosstalk characteristics of quantum dot semiconductor optical amplifiers at 1.3 μm.
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- Physica Status Solidi (B), 2009, v. 246, n. 4, p. 864, doi. 10.1002/pssb.200880598
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- Article
Spontaneous Emission Amplification in Silver—Organic Periodic Structures and Tamm Plasmon Structures.
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- Semiconductors, 2018, v. 52, n. 14, p. 1861, doi. 10.1134/S1063782618140191
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- Article
Experimental Study of Spontaneous-Emission Enhancement in Tamm Plasmon Structures with an Organic Active Region.
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- Semiconductors, 2018, v. 52, n. 11, p. 1420, doi. 10.1134/S1063782618110155
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- Article