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Growth of InAs photodiode structures from metalorganic compounds.
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- Technical Physics Letters, 1998, v. 24, n. 4, p. 247, doi. 10.1134/1.1262072
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- Article
Superluminescence in an AlGaAsSb/InGaAsSb/AlGaAsSb double heterostructure.
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- Technical Physics Letters, 1997, v. 23, n. 5, p. 364, doi. 10.1134/1.1261682
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- Article
New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers.
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- Technical Physics Letters, 1997, v. 23, n. 3, p. 233
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Properties of the electron channel in single GaInAsSb/p-InAs heterostructures.
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- Technical Physics Letters, 1997, v. 23, n. 2, p. 128, doi. 10.1134/1.1261586
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- Article
Infrared laser (λ=3.2 μm) based on broken-gap type II heterojunctions with improved temperature characteristics.
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- Technical Physics Letters, 1997, v. 23, n. 2, p. 151, doi. 10.1134/1.1261568
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- Article
Mid-Infrared (λ = 2.775μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy.
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- Semiconductors, 2003, v. 37, n. 6, p. 736, doi. 10.1134/1.1582546
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- Article
Photodiodes for a 1.5–4.8μm Spectral Range Based on Type-II GaSb/InGaAsSb Heterostructures.
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- Semiconductors, 2001, v. 35, n. 4, p. 453, doi. 10.1134/1.1365194
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- Article
Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties.
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- Semiconductors, 2001, v. 35, n. 3, p. 331, doi. 10.1134/1.1356157
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- Article
Photoluminescence of Ga[sub 1 – ][sub x]In[sub x]As[sub y]Sb[sub 1 – ][sub y] Solid Solutions Lattice-Matched to InAs.
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- Semiconductors, 2000, v. 34, n. 12, p. 1376, doi. 10.1134/1.1331794
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- Article
Magnetotransport in a Semimetal Channel in p-Ga[sub 1 – ][sub x]In[sub x]As[sub y]Sb[sub 1 – ][sub y] / p-InAs Heterostructures with Various Compositions of the Solid Solution.
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- Semiconductors, 2000, v. 34, n. 2, p. 189, doi. 10.1134/1.1187965
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- Article
Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions.
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- Semiconductors, 1999, v. 33, n. 3, p. 350, doi. 10.1134/1.1187693
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- Article
Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure.
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- Semiconductors, 1999, v. 33, n. 3, p. 355, doi. 10.1134/1.1187694
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- Article
Long-wavelength photodiodes based on Ga[sub 1-x]In[sub x]As[sub y]Sb[sub 1-y] with composition near the miscibility boundary.
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- Semiconductors, 1999, v. 33, n. 2, p. 216, doi. 10.1134/1.1187673
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Scanning electron microscopy of long-wavelength laser structures.
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- Semiconductors, 1998, v. 32, n. 11, p. 1157
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- Article
Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs.
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- Semiconductors, 1998, v. 32, n. 2, p. 195, doi. 10.1134/1.1187343
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- Article
Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures.
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- Semiconductors, 1997, v. 31, n. 10, p. 1046, doi. 10.1134/1.1187022
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- Article
Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution.
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- Semiconductors, 1997, v. 31, n. 8, p. 763, doi. 10.1134/1.1187244
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- Article
Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures.
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- Semiconductors, 1997, v. 31, n. 6, p. 556, doi. 10.1134/1.1187217
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- Article
Radiative recombination on the interface in a p-GaInAsSb/p-InAs type-II (broken-gap) heterostructure upon pulsed excitation.
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- Semiconductors, 1997, v. 31, n. 6, p. 560, doi. 10.1134/1.1187218
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- Article
Solid solution In[sub x]Ga[sub 1-x]As[sub y]Sb[sub z]P[sub 1-y-z]: A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy.
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- Semiconductors, 1997, v. 31, n. 4, p. 344, doi. 10.1134/1.1187160
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- Article