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Self‐Rectifying Memristors for Three‐Dimensional In‐Memory Computing.
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- Advanced Materials, 2024, v. 36, n. 4, p. 1, doi. 10.1002/adma.202307218
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- Article
Solid-state nanopore systems: from materials to applications.
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- NPG Asia Materials, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41427-021-00313-z
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- Article
Solid-state nanopore systems: from materials to applications.
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- NPG Asia Materials, 2021, v. 13, n. 1, p. 1, doi. 10.1038/s41427-021-00313-z
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- Article
Heteroepitaxial passivation of Cs<sub>2</sub>AgBiBr<sub>6</sub> wafers with suppressed ionic migration for X-ray imaging.
- Published in:
- Nature Communications, 2019, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41467-019-09968-3
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- Article
Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility.
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- Journal of Materials Science, 2019, v. 54, n. 9, p. 7035, doi. 10.1007/s10853-019-03380-4
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- Article
A High‐Performance Ag/TiN/HfO<sub>x</sub>/HfO<sub>y</sub>/HfO<sub>x</sub>/Pt Diffusive Memristor for Calibration‐Free True Random Number Generator.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200202
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- Article
Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing.
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- Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000309
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- Article
Boolean and Sequential Logic in a One‐Memristor‐One‐Resistor (1M1R) Structure for In‐Memory Computing.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 9, p. 1, doi. 10.1002/aelm.201800229
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- Article
Effect of the Chalcogenide Element Doping on the Electronic Properties of CoFeAl Heusler Alloys.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1028, doi. 10.1007/s11664-015-4268-5
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Ab Initio Simulation of Ta<sub>2</sub>O<sub>5</sub>: A High Symmetry Ground State Phase with Application to Interface Calculation.
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- Annalen der Physik, 2019, v. 531, n. 8, p. N.PAG, doi. 10.1002/andp.201800524
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- Article
BaAs<sub>3</sub>: a narrow gap 2D semiconductor with vacancy-induced semiconductor–metal transition from first principles.
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- Journal of Materials Science, 2019, v. 54, n. 19, p. 12676, doi. 10.1007/s10853-019-03796-y
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- Article
Two-dimensional silicon chalcogenides with high carrier mobility for photocatalytic water splitting.
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- Journal of Materials Science, 2019, v. 54, n. 17, p. 11485, doi. 10.1007/s10853-019-03699-y
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- Article
Short channel effects on electrokinetic energy conversion in solid-state nanopores.
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- Scientific Reports, 2017, p. 46661, doi. 10.1038/srep46661
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- Article
Non-binary Colour Modulation for Display Device Based on Phase Change Materials.
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- Scientific Reports, 2016, p. 39206, doi. 10.1038/srep39206
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- Article
Functional Demonstration of a Memristive Arithmetic Logic Unit (MemALU) for In‐Memory Computing.
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- Advanced Functional Materials, 2019, v. 29, n. 49, p. N.PAG, doi. 10.1002/adfm.201905660
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- Article
Synaptic Suppression Triplet‐STDP Learning Rule Realized in Second‐Order Memristors.
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- Advanced Functional Materials, 2018, v. 28, n. 5, p. 1, doi. 10.1002/adfm.201704455
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- Article
Synthesis and Characteristics of a Phase-Change Magnetic Material.
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- Advanced Materials, 2008, v. 20, n. 12, p. 2394, doi. 10.1002/adma.200702282
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- Article
Recent Progress on Memristive Convolutional Neural Networks for Edge Intelligence.
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- Advanced Intelligent Systems (2640-4567), 2020, v. 2, n. 11, p. 1, doi. 10.1002/aisy.202000114
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- Article
Recent Progress on Memristive Convolutional Neural Networks for Edge Intelligence.
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- Advanced Intelligent Systems (2640-4567), 2020, v. 2, n. 11, p. 1, doi. 10.1002/aisy.202000114
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- Article
Graphene–ferroelectric transistors as complementary synapses for supervised learning in spiking neural network.
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- NPJ 2D Materials & Applications, 2019, v. 3, n. 1, p. N.PAG, doi. 10.1038/s41699-019-0114-6
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- Article
Diverse spike-timing-dependent plasticity based on multilevel HfO<sub>x</sub> memristor for neuromorphic computing.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 6, p. 1, doi. 10.1007/s00339-018-1847-3
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- Article
Lead‐Free Halide Rb<sub>2</sub>CuBr<sub>3</sub> as Sensitive X‐Ray Scintillator.
- Published in:
- Advanced Materials, 2019, v. 31, n. 44, p. N.PAG, doi. 10.1002/adma.201904711
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- Article
Hot‐Pressed CsPbBr<sub>3</sub> Quasi‐Monocrystalline Film for Sensitive Direct X‐ray Detection.
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- Advanced Materials, 2019, v. 31, n. 44, p. N.PAG, doi. 10.1002/adma.201904405
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- Article