Works by Mezhennyi, M.
Results: 6
Theoretical and Experimental Study of the Formation of Grown-in and As-Grown Microdefects in Dislocation-Free Silicon Single Crystals Grown by the Czochralski Method.
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- Crystallography Reports, 2005, v. 50, n. 7, p. S159, doi. 10.1134/1.2133994
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- Article
Determination of the types and densities of dislocations in GaN epitaxial layers of different thicknesses by optical and atomic force microscopy.
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- Crystallography Reports, 2012, v. 57, n. 2, p. 277, doi. 10.1134/S1063774512020113
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- Article
Effect of sapphire substrate orientation on the surface morphology and structural quality of thick GaN layers grown by hydride vapor phase epitaxy.
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- Crystallography Reports, 2011, v. 56, n. 2, p. 274, doi. 10.1134/S1063774511020052
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- Article
Evaluating intrinsic deformations in oxygen-containing precipitates.
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- Technical Physics Letters, 2008, v. 34, n. 2, p. 106, doi. 10.1134/S1063785008020065
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- Article
Dislocation generation in heat-treated nitrogen-doped silicon wafers when applying external loads.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2009, v. 3, n. 5, p. 747, doi. 10.1134/S1027451009050140
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- Article
Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2007, v. 1, n. 4, p. 380, doi. 10.1134/S1027451007040039
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- Article