Works matching AU Mezdrogina, M. M.

Results: 34

Self-Organization Processes and Optical Activation of the Er[sup 3+] Ions in Amorphous Hydrogenated Er-Doped Silicon Films.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 684, doi. 10.1134/1.1379404

By:

Mezdrogina, M. M.;
Mosina, G. N.;
Terukov, E. I.;
Trapeznikova, I. N.

Publication type:

Article

Transformation of an Unordered Structural Network in Amorphous Hydrogenated Silicon Films as a Result of Doping with Boron.

Published in:

Semiconductors, 2000, v. 34, n. 3, p. 348, doi. 10.1134/1.1187984

By:

Mezdrogina, M. M.;
Patsekin, A. V.

Publication type:

Article

Formation of optically active centers in films of erbium-doped amorphous hydrated silicon.

Published in:

Semiconductors, 1999, v. 33, n. 10, p. 1145, doi. 10.1134/1.1187884

By:

Mezdrogina, M. M.;
Annaorazova, M. P.;
Terukov, E. I.;
Trapeznikova, I. N.;
Nazarov, N.

Publication type:

Article

Erbium impurity atoms in silicon

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 636, doi. 10.1134/1.1187454

By:

Masterov, V. F.;
Nasredinov, F. S.;
Seregin, P. P.;
Terukov, E. I.;
Mezdrogina, M. M.

Publication type:

Article

Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p-i-n structures based on them

Published in:

Semiconductors, 1998, v. 32, n. 5, p. 555, doi. 10.1134/1.1187437

By:

Mezdrogina, M. M.;
Abramov, A. V.;
Mosina, G. N.;
Trapeznikova, I. N.;
Patsekin, A. V.

Publication type:

Article

Emission from rare-earth ions in GaN wurtzite crystals.

Published in:

Inorganic Materials, 2011, v. 47, n. 13, p. 1450, doi. 10.1134/S0020168511130048

By:

Mezdrogina, M.;
Danilovskii, E.;
Kuz'min, R.

Publication type:

Article

Parameters of ZnO Semiconductor Films Doped with Mn and Fe 3d Impurities.

Published in:

Semiconductors, 2020, v. 54, n. 1, p. 15, doi. 10.1134/S1063782620010145

By:

Mezdrogina, M. M.;
Vinogradov, A. Ya.;
Kozhanova, Yu. V.

Publication type:

Article

Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1233, doi. 10.1134/S1063782618100123

By:

Mezdrogina, M. M.;
Vinogradov, A. Ja.;
Kozhanova, Yu. V.

Publication type:

Article

Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 559, doi. 10.1134/S1063782617050177

By:

Mezdrogina, M.;
Vinogradov, A.;
Levitskii, V.;
Terukova, E.;
Kozhanova, Yu.;
Aglikov, A.

Publication type:

Article

UV and IR emission intensity in ZnO films, nanorods, and bulk single crystals doped with Er and additionally introduced impurities.

Published in:

Semiconductors, 2016, v. 50, n. 10, p. 1304, doi. 10.1134/S106378261610016X

By:

Mezdrogina, M.;
Vinogradov, A.;
Kuzmin, R.;
Levitski, V.;
Kozanova, Yu.;
Lyanguzov, N.;
Chukichev, M.

Publication type:

Article

Effect of self-organization, defects, impurities, and autocatalytic processes on the parameters of ZnO films and nanorods.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1473, doi. 10.1134/S1063782615110159

By:

Mezdrogina, M.;
Eremenko, M.;
Levitskii, V.;
Petrov, V.;
Terukov, E.;
Kaidashev, E.;
Langusov, N.

Publication type:

Article

Emission intensity of the λ = 1.54 μm line in ZnO films grown by magnetron sputtering, diffusion doped with Ce, Yb, Er.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 992, doi. 10.1134/S1063782615080138

By:

Mezdrogina, M.;
Eremenko, M.;
Smirnov, A.;
Petrov, V.;
Terukov, E.

Publication type:

Article

Emission intensity in the visible and IR spectral ranges from Si-based structures formed by direct bonding with simultaneous doping with erbium (Er) and europium (Eu)

Published in:

Semiconductors, 2013, v. 47, n. 9, p. 1193, doi. 10.1134/S1063782613090157

By:

Mezdrogina, M. M.;
Kostina, L. S.;
Beliakova, E. I.;
Kuzmin, R. V.

Publication type:

Article

Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm.

Published in:

Semiconductors, 2013, v. 47, n. 4, p. 501, doi. 10.1134/S1063782613040167

By:

Mezdrogina, M.;
Kozhanova, Yu.

Publication type:

Article

Intensity of emission from intracenter 4 f-transitions in a-Si:H, ZnO, and GaN films doped with rare-earth ions.

Published in:

Semiconductors, 2012, v. 46, n. 7, p. 901, doi. 10.1134/S1063782612070135

By:

Mezdrogina, M.;
Eremenko, M.;
Terukov, E.;
Kozhanova, Yu.

Publication type:

Article

Photoluminescence of nitro-substituted europium (III) phthalocyanines.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1070, doi. 10.1134/S1063782610080208

By:

Ziminov, A. V.;
Polevaya, Yu. A.;
Jourre, T. A.;
Ramsh, S. M.;
Mezdrogina, M. M.;
Poletaev, N. K.

Publication type:

Article

The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 426, doi. 10.1134/S1063782610040032

By:

Mezdrogina, M. M.;
Danilevskii, E. Yu.;
Kuz'min, R. V.;
Poletaev, N. K.;
Trapeznikova, I. N.;
Chukichev, M. V.;
Bordovskii, G. A.;
Marchenko, A. V.;
Eremenko, M. V.

Publication type:

Article

Emission sensitization and mechanisms of electron-excitation migration in structures based on III-nitrides doped with rare-earth elements (Eu, Er, Sm).

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 321, doi. 10.1134/S1063782610030097

By:

Mezdrogina, M. M.;
Danilovsky, E. Yu.;
Kuzmin, R. V.

Publication type:

Article

Mechanisms of doping and the intensity of emission from intracenter f-f transitions in the doping Eu impurity in structures with In<sub> x</sub>Ga<sub>1 − x</sub> N/GaN quantum wells.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 447, doi. 10.1134/S1063782609040083

By:

Mezdrogina, M. M.;
Krivolapchuk, V. V.;
Petrov, V. N.;
Kozhanova, Yu. V.;
Danilovski, E. Yu.;
Kuz'min, R. V.

Publication type:

Article

Photoluminescence spectra of n-ZnO/ p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 766, doi. 10.1134/S1063782608070038

By:

Mezdrogina, M. M.;
Krivolapchuk, V. V.;
Feoktistov, N. A.;
Danilovskiĭ, É. Yu.;
Kuzmin, R. V.;
Razumov, S. V.;
Kukushkin, S. A.;
Osipov, A. V.

Publication type:

Article

Spatial distribution of defects and the kinetics of nonequilibrium charge carriers in GaN wurtzite crystals doped with Sm, Eu, Er, Tm, and supplementary Zn impurities.

Published in:

Semiconductors, 2008, v. 42, n. 2, p. 159, doi. 10.1134/S1063782608020073

By:

Mezdrogina, M.;
Krivolapchuk, V.;
Kozhanova, Yu.

Publication type:

Article

Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-Doped GaN crystals.

Published in:

Semiconductors, 2006, v. 40, n. 12, p. 1378, doi. 10.1134/S1063782606120025

By:

Mezdrogina, M. M.;
Krivolapchuk, V. V.;
Petrov, V. N.;
Rodin, S. N.;
Cherenkov, A. V.

Publication type:

Article

Sensitization of luminescence of wurtzite GaN crystals doped with Eu and the additionally introduced Zn impurity.

Published in:

Semiconductors, 2006, v. 40, n. 9, p. 1007, doi. 10.1134/S106378260609003X

By:

Krivolapchyuk, V. V.;
Mezdrogina, M. M.;
Kozhanova, Yu. V.;
Rodin, S. N.

Publication type:

Article

Impurity Centers of Rare-Earth Ions (Eu, Sm, Er) in GaN Wurtzite Crystals.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1267, doi. 10.1134/1.1823057

By:

Krivolapchuk, V. V.;
Kozhanova, Yu. V.;
Lundin, V. V.;
Mezdrogina, M. M.;
Rodin, S. N.;
Yusupova, Sh. A.

Publication type:

Article

Nature of Impurity Centers of Rare-Earth Metals and Self-Organization Processes in a-Si:H Films.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1252, doi. 10.1134/1.1521226

By:

Mezdrogina, M. M.;
Trapeznikova, I. N.;
Terukov, E. I.;
Nasredinov, F. S.;
Seregin, N. P.;
Seregin, P. P.

Publication type:

Article

Intensity of visible and IR emission of intracenter 4 f transitions of RE ions in Er- and Tm-doped ZnO films with additional Ag, Li, and N impurities.

Published in:

Optics & Spectroscopy, 2016, v. 121, n. 2, p. 220, doi. 10.1134/S0030400X16080154

By:

Mezdrogina, M.;
Vinogradov, A.;
Eremenko, M.;
Levitskii, V.;
Terukov, E.;
Kozhanova, Yu.

Publication type:

Article

Defect centers of rare-earth metals in a-Si(H).

Published in:

Glass Physics & Chemistry, 2012, v. 38, n. 2, p. 228, doi. 10.1134/S1087659612020034

By:

Bordovskii, V.;
Marchenko, A.;
Mezdrogina, M.;
Naletko, A.;
Seregin, P.;
Dashina, A.

Publication type:

Article

LED Structures Based on ZnO Films Obtained by RF Magnetron Sputtering for the UV Spectral Range.

Published in:

Technical Physics, 2020, v. 65, n. 3, p. 434, doi. 10.1134/S1063784220030159

By:

Mezdrogina, M. M.;
Vinogradov, A. Ya.;
Kozhanova, Yu. V.;
Borsuk, E. A.

Publication type:

Article

Influence of Silver and Gold Nanoparticles and Thin Layers on Charge Carrier Generation in InGaN/GaN Multiple Quantum Well Structures and Crystalline Zinc Oxide Films.

Published in:

Technical Physics, 2018, v. 63, n. 4, p. 551, doi. 10.1134/S1063784218040151

By:

Mezdrogina, M. M.;
Vinogradov, A. Ya.;
Kozhanova, Yu. V.;
Levitskii, V. S.

Publication type:

Article

Photoinduced defects in a-Si:H Films and InGaN/GaN multiple quantum well structures doped with Eu, Sm, and Eu + Sm.

Published in:

Technical Physics, 2015, v. 60, n. 9, p. 1353, doi. 10.1134/S106378421509011X

By:

Mezdrogina, M.;
Terukov, E.;
Trapeznikova, I.;
Kozhanova, Yu.

Publication type:

Article

Setup for taking the radiation spectra of wideband semiconductors.

Published in:

Technical Physics, 2011, v. 56, n. 9, p. 1297, doi. 10.1134/S1063784211090271

By:

Tubol'tsev, Yu.;
Mezdrogina, M.;
Khil'kevich, E.;
Chichagov, Yu.;
Poletaev, N.;
Kuz'min, R.

Publication type:

Article

The Absorption Spectra of Gallium Nitride Crystals Doped with Erbium Ions.

Published in:

Technical Physics Letters, 2002, v. 28, n. 4, p. 270, doi. 10.1134/1.1476987

By:

Krivolapchuk, V. V.;
Mezdrogina, M. M.;
Raevskiı, S. D.;
Skvortsov, A. P.;
Yusupova, Sh. A.

Publication type:

Article

Nature of the Impurity States Arising from Transition Metals in Hydrogenated Amorphous Silicon.

Published in:

Physica Status Solidi (B), 1989, v. 155, n. 2, p. K113, doi. 10.1002/pssb.2221550252

By:

Nasredinov, F. S.;
Mezdrogina, M. M.;
Seregin, P. P.;
Zh. Abdumanapov, U.;
Tursunov, U. S.

Publication type:

Article

Density of States and Photoconductivity of Hydrogenated Amorphous Silicon.

Published in:

Physica Status Solidi (B), 1986, v. 138, n. 2, p. 647, doi. 10.1002/pssb.2221380229

By:

Terekhov, V. A.;
Trostyanskii, S. N.;
Domashevskaya, E. P.;
Golikova, O. A.;
Mezdrogina, M. M.;
Sorokina, K. L.;
Kazanin, M. M.

Publication type:

Article