Elimination of Edge Defects in SiC Crystals Grown Through Physical Vapor Transport Method.
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- Crystal Research & Technology, 2025, v. 60, n. 6, p. 1, doi. 10.1002/crat.202500028
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Works matching AU Meng, Dalei
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Growth of 2-Inch V-Doped Bulk 6H-SiC with High Semi-Insulating Yield.
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- Journal of Electronic Materials, 2010, v. 39, n. 5, p. 530, doi. 10.1007/s11664-009-1028-4
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