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Study and Development of a Fluorescence Based Sensor System for Monitoring Oxygen in Wine Production: The WOW Project.
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- Sensors (14248220), 2018, v. 18, n. 4, p. 1, doi. 10.3390/s18041130
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- Article
Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices.
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- Crystals (2073-4352), 2021, v. 11, n. 9, p. 1037, doi. 10.3390/cryst11091037
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- Article
Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode.
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- Micromachines, 2022, v. 13, n. 8, p. 1266, doi. 10.3390/mi13081266
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- Article
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p + n − n Diodes: The Road to Reliable Vertical MOSFETs.
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- Micromachines, 2021, v. 12, n. 4, p. 445, doi. 10.3390/mi12040445
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- Article
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.
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- Micromachines, 2020, v. 11, n. 1, p. 101, doi. 10.3390/mi11010101
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- Article
Reliability of Commercial UVC LEDs: 2022 State-of-the-Art.
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- Electronics (2079-9292), 2022, v. 11, n. 5, p. 728, doi. 10.3390/electronics11050728
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- Article
A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics.
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- Electronics (2079-9292), 2021, v. 10, n. 22, p. 2734, doi. 10.3390/electronics10222734
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- Article
UV-Based Technologies for SARS-CoV2 Inactivation: Status and Perspectives.
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- Electronics (2079-9292), 2021, v. 10, n. 14, p. 1703, doi. 10.3390/electronics10141703
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- Article
Human Perceptuality-Aware Tone-Mapping-Based Dynamic Voltage Scaling for an AMOLED Display Smartphone.
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- Electronics (2079-9292), 2021, v. 10, n. 9, p. 1015, doi. 10.3390/electronics10091015
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- Article
Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors.
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- Electronics (2079-9292), 2020, v. 9, n. 11, p. 1840, doi. 10.3390/electronics9111840
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- Article
Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 24, p. 1, doi. 10.1002/pssa.202100722
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- Article
Defects and Reliability of GaN‐Based LEDs: Review and Perspectives.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 8, p. 1, doi. 10.1002/pssa.202100727
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- Article
Degradation Mechanisms of GaN‐Based Vertical Devices: A Review.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900750
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- Article
Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900687
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- Article
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 947, doi. 10.1002/pssa.201431743
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- Article
Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1122, doi. 10.1002/pssa.201431744
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- Article
An Analysis of the Compositional Techniques in John Chowning's Stria.
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- Computer Music Journal, 2007, v. 31, n. 3, p. 26, doi. 10.1162/comj.2007.31.3.26
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- Article
Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-46186-9
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- Article
Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs.
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- International Journal of Microwave & Wireless Technologies, 2016, v. 8, n. 4/5, p. 663, doi. 10.1017/S1759078716000398
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- Article
Reliability issues of Gallium Nitride High Electron Mobility Transistors.
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- International Journal of Microwave & Wireless Technologies, 2010, v. 2, n. 1, p. 39, doi. 10.1017/S1759078710000097
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- Article
Fast System to measure the dynamic on-resistance of on-wafer 600 V normally off GaN HEMTs in hard-switching application conditions.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 11, p. 2390, doi. 10.1049/iet-pel.2019.1455
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- Article
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization.
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- Materials (1996-1944), 2021, v. 14, n. 9, p. 2316, doi. 10.3390/ma14092316
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- Article
Inactivating SARS-CoV-2 Using 275 nm UV-C LEDs through a Spherical Irradiation Box: Design, Characterization and Validation.
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- Materials (1996-1944), 2021, v. 14, n. 9, p. 2315, doi. 10.3390/ma14092315
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- Article
Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics.
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- Materials (1996-1944), 2021, v. 14, n. 5, p. 1114, doi. 10.3390/ma14051114
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- Article
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability.
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- Materials (1996-1944), 2020, v. 13, n. 21, p. 4740, doi. 10.3390/ma13214740
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- Article
High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications.
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- Materials (1996-1944), 2020, v. 13, n. 19, p. 4271, doi. 10.3390/ma13194271
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- Article
Reliability of Blue-Emitting Eu2+-Doped Phosphors for Laser-Lighting Applications.
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- Materials (1996-1944), 2018, v. 11, n. 9, p. 1552, doi. 10.3390/ma11091552
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- Article
GaN-Based Laser Wireless Power Transfer System.
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- Materials (1996-1944), 2018, v. 11, n. 1, p. 153, doi. 10.3390/ma11010153
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- Article
Laser-Based Lighting: Experimental Analysis and Perspectives.
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- Materials (1996-1944), 2017, v. 10, n. 10, p. 1166, doi. 10.3390/ma10101166
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- Article
Nitride Semiconductors.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202300484
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- Article
Performance and Degradation of Commercial Ultraviolet‐C Light‐Emitting Diodes for Disinfection Purposes.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200900
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- Article
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate.
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- Energies (19961073), 2017, v. 10, n. 2, p. 153, doi. 10.3390/en10020153
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- Article
Trap-state mapping to model GaN transistors dynamic performance.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-05830-7
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- Article
Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 4, p. 668, doi. 10.1049/iet-pel.2017.0403
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- Article
Nitride Semiconductors.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202300286
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- Article