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Trap-state mapping to model GaN transistors dynamic performance.
- Published in:
- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-05830-7
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- Publication type:
- Article
Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode.
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- Micromachines, 2022, v. 13, n. 8, p. 1266, doi. 10.3390/mi13081266
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- Publication type:
- Article
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p + n − n Diodes: The Road to Reliable Vertical MOSFETs.
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- Micromachines, 2021, v. 12, n. 4, p. 445, doi. 10.3390/mi12040445
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- Publication type:
- Article
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.
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- Micromachines, 2020, v. 11, n. 1, p. 101, doi. 10.3390/mi11010101
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- Publication type:
- Article
Characterization of Localized Degradation in Reverse-Biased GaN HEMTs by Scanning Transmission Electron Microscopy and Electron Holography.
- Published in:
- 2010
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- Publication type:
- Abstract
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters.
- Published in:
- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 362, doi. 10.1007/s11664-010-1434-7
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- Publication type:
- Article
Reliability of Commercial UVC LEDs: 2022 State-of-the-Art.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 5, p. 728, doi. 10.3390/electronics11050728
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- Publication type:
- Article
A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics.
- Published in:
- Electronics (2079-9292), 2021, v. 10, n. 22, p. 2734, doi. 10.3390/electronics10222734
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- Publication type:
- Article
UV-Based Technologies for SARS-CoV2 Inactivation: Status and Perspectives.
- Published in:
- Electronics (2079-9292), 2021, v. 10, n. 14, p. 1703, doi. 10.3390/electronics10141703
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- Publication type:
- Article
Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors.
- Published in:
- Electronics (2079-9292), 2020, v. 9, n. 11, p. 1840, doi. 10.3390/electronics9111840
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- Publication type:
- Article
ESREF 2012 in Cagliari.
- Published in:
- Electronic Device Failure Analysis, 2013, v. 15, n. 1, p. 23
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- Publication type:
- Article
Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices.
- Published in:
- Crystals (2073-4352), 2021, v. 11, n. 9, p. 1037, doi. 10.3390/cryst11091037
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- Publication type:
- Article
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate.
- Published in:
- Energies (19961073), 2017, v. 10, n. 2, p. 153, doi. 10.3390/en10020153
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- Publication type:
- Article
Opportunities from Doping of Non‐Critical Metal Oxides in Last Generation Light‐Conversion Devices.
- Published in:
- Advanced Energy Materials, 2021, v. 11, n. 31, p. 1, doi. 10.1002/aenm.202101041
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- Publication type:
- Article
Study and Development of a Fluorescence Based Sensor System for Monitoring Oxygen in Wine Production: The WOW Project.
- Published in:
- Sensors (14248220), 2018, v. 18, n. 4, p. 1, doi. 10.3390/s18041130
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- Publication type:
- Article
Plasmon‐Assisted Operando Self‐Healing of Cu<sub>2</sub>O Photocathodes (Adv. Sustainable Syst. 3/2023).
- Published in:
- Advanced Sustainable Systems, 2023, v. 7, n. 3, p. 1, doi. 10.1002/adsu.202370010
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- Publication type:
- Article
Plasmon‐Assisted Operando Self‐Healing of Cu<sub>2</sub>O Photocathodes.
- Published in:
- Advanced Sustainable Systems, 2023, v. 7, n. 3, p. 1, doi. 10.1002/adsu.202200397
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- Publication type:
- Article
Performance and Degradation of Commercial Ultraviolet‐C Light‐Emitting Diodes for Disinfection Purposes.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200900
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- Publication type:
- Article
Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 24, p. 1, doi. 10.1002/pssa.202100722
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- Publication type:
- Article
Defects and Reliability of GaN‐Based LEDs: Review and Perspectives.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 8, p. 1, doi. 10.1002/pssa.202100727
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- Publication type:
- Article
Degradation Mechanisms of GaN‐Based Vertical Devices: A Review.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900750
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- Publication type:
- Article
Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900687
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- Publication type:
- Article
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 947, doi. 10.1002/pssa.201431743
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- Publication type:
- Article
Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1122, doi. 10.1002/pssa.201431744
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- Publication type:
- Article
Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs.
- Published in:
- International Journal of Microwave & Wireless Technologies, 2016, v. 8, n. 4/5, p. 663, doi. 10.1017/S1759078716000398
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- Publication type:
- Article
Fast System to measure the dynamic on-resistance of on-wafer 600 V normally off GaN HEMTs in hard-switching application conditions.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 11, p. 2390, doi. 10.1049/iet-pel.2019.1455
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- Publication type:
- Article
Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 4, p. 668, doi. 10.1049/iet-pel.2017.0403
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- Publication type:
- Article
Quality Assessment of Perovskite Solar Cells: An Industrial Point of View.
- Published in:
- Photonics, 2024, v. 11, n. 9, p. 880, doi. 10.3390/photonics11090880
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- Publication type:
- Article
Reliability Investigation of GaN HEMTs for MMICs Applications.
- Published in:
- Micromachines, 2014, v. 5, n. 3, p. 570, doi. 10.3390/mi5030570
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- Publication type:
- Article
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization.
- Published in:
- Materials (1996-1944), 2021, v. 14, n. 9, p. 2316, doi. 10.3390/ma14092316
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- Publication type:
- Article
Inactivating SARS-CoV-2 Using 275 nm UV-C LEDs through a Spherical Irradiation Box: Design, Characterization and Validation.
- Published in:
- Materials (1996-1944), 2021, v. 14, n. 9, p. 2315, doi. 10.3390/ma14092315
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- Publication type:
- Article
Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics.
- Published in:
- Materials (1996-1944), 2021, v. 14, n. 5, p. 1114, doi. 10.3390/ma14051114
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- Publication type:
- Article
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability.
- Published in:
- Materials (1996-1944), 2020, v. 13, n. 21, p. 4740, doi. 10.3390/ma13214740
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- Publication type:
- Article
High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications.
- Published in:
- Materials (1996-1944), 2020, v. 13, n. 19, p. 4271, doi. 10.3390/ma13194271
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- Publication type:
- Article
Reliability of Blue-Emitting Eu2+-Doped Phosphors for Laser-Lighting Applications.
- Published in:
- Materials (1996-1944), 2018, v. 11, n. 9, p. 1552, doi. 10.3390/ma11091552
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- Publication type:
- Article
GaN-Based Laser Wireless Power Transfer System.
- Published in:
- Materials (1996-1944), 2018, v. 11, n. 1, p. 153, doi. 10.3390/ma11010153
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- Publication type:
- Article
Laser-Based Lighting: Experimental Analysis and Perspectives.
- Published in:
- Materials (1996-1944), 2017, v. 10, n. 10, p. 1166, doi. 10.3390/ma10101166
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- Publication type:
- Article
Design and characterization of an active recovering mechanism for high-performance RF MEMS redundancy switches.
- Published in:
- International Journal of Microwave & Wireless Technologies, 2011, v. 3, n. 5, p. 539, doi. 10.1017/S1759078711000675
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- Publication type:
- Article
Reliability issues of Gallium Nitride High Electron Mobility Transistors.
- Published in:
- International Journal of Microwave & Wireless Technologies, 2010, v. 2, n. 1, p. 39, doi. 10.1017/S1759078710000097
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- Publication type:
- Article
Factors Limiting the Maximum Operating Voltage of Microwave Devices.
- Published in:
- International Journal of High Speed Electronics & Systems, 2000, v. 10, n. 1, p. 119, doi. 10.1142/S0129156400000155
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- Publication type:
- Article
Front Cover: High Open‐Circuit Voltage Cs<sub>2</sub>AgBiBr<sub>6</sub> Carbon‐Based Perovskite Solar Cells via Green Processing of Ultrasonic Spray‐Coated Carbon Electrodes from Waste Tire Sources (ChemSusChem 22/2022).
- Published in:
- ChemSusChem, 2022, v. 15, n. 22, p. 1, doi. 10.1002/cssc.202201590
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- Publication type:
- Article
High Open‐Circuit Voltage Cs<sub>2</sub>AgBiBr<sub>6</sub> Carbon‐Based Perovskite Solar Cells via Green Processing of Ultrasonic Spray‐Coated Carbon Electrodes from Waste Tire Sources.
- Published in:
- ChemSusChem, 2022, v. 15, n. 22, p. 1, doi. 10.1002/cssc.202201590
- By:
- Publication type:
- Article
High Open‐Circuit Voltage Cs<sub>2</sub>AgBiBr<sub>6</sub> Carbon‐Based Perovskite Solar Cells via Green Processing of Ultrasonic Spray‐Coated Carbon Electrodes from Waste Tire Sources.
- Published in:
- ChemSusChem, 2022, v. 15, n. 22, p. 1, doi. 10.1002/cssc.202201590
- By:
- Publication type:
- Article