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Effect of the Spin–Orbit Interaction on the Cyclotron Resonance of Two-Dimensional Electrons.
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- JETP Letters, 2004, v. 79, n. 11, p. 545, doi. 10.1134/1.1787103
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- Article
Cyclotron Resonance in the InAs/GaSb Heterostructure in an Inclined Magnetic Field.
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- JETP Letters, 2002, v. 76, n. 4, p. 222, doi. 10.1134/1.1517389
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- Article
Far Infrared Electroluminescence in Cascade Type-II Heterostructures.
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- JETP Letters, 2002, v. 75, n. 8, p. 391
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Observation of a hybridization gap in cyclotron resonance spectra of semimetallic InAs/GaSb quantum wells.
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- JETP Letters, 1999, v. 69, n. 4, p. 343
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On the nature of the oscillations of cyclotron absorption in InAs/GaSb quantum wells.
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- JETP Letters, 1998, v. 68, n. 10, p. 792, doi. 10.1134/1.567947
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Electron spin resonance in GaSb–InAs–GaSb semimetal quantum wells.
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- JETP Letters, 1998, v. 68, n. 10, p. 810, doi. 10.1134/1.567950
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- Article
Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range.
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- Technical Physics Letters, 2016, v. 42, n. 10, p. 1038, doi. 10.1134/S1063785016100266
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Midinfrared Injection-Pumped Laser Based on a III–V/II–VI Hybrid Heterostructure with Submonolayer InSb Insets.
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- Technical Physics Letters, 2005, v. 31, n. 3, p. 235, doi. 10.1134/1.1894443
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Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 477, doi. 10.1134/1.1262152
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In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix.
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- Semiconductors, 2008, v. 42, n. 1, p. 74, doi. 10.1134/S1063782608010107
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- Article
Special Features of Sb[sub 2] and Sb[sub 4] Incorporation in MBE-Grown AlGaAsSb Alloys.
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- Semiconductors, 2004, v. 38, n. 3, p. 266, doi. 10.1134/1.1682324
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Structural, Luminescent, and Transport Properties of Hybrid AlAsSb/InAs/Cd(Mg)Se Heterostructures Grown by Molecular Beam Epitaxy.
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- Semiconductors, 2001, v. 35, n. 4, p. 419
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- Article
Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface.
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- Semiconductors, 1999, v. 33, n. 8, p. 886, doi. 10.1134/1.1187805
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Characteristics of the formation of (Al, Ga)Sb/InAs heterointerfaces in molecular-beam epitaxy.
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- Semiconductors, 1997, v. 31, n. 10, p. 1067, doi. 10.1134/1.1187324
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- Article
Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures.
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- Semiconductors, 1997, v. 31, n. 10, p. 1071
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Photoluminescence of InSb quantum dots in GaAs and GaSb matrices.
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- Semiconductors, 1997, v. 31, n. 1, p. 55, doi. 10.1134/1.1187086
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- Article