Works by Mazur, Yu. I.

Results: 13

Investigation of deep levels in InGaAs channels comprising thin layers of InAs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 797, doi. 10.1007/s10854-007-9451-x

By:

Dobbert, J.;
Kunets, Vas. P.;
Morgan, T. Al.;
Guzun, D. I;
Mazur, Yu. I.;
Masselink, W. T.;
Salamo, G. J.

Publication type:

Article

Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 692, doi. 10.1007/s10854-007-9381-7

By:

Strelchuk, V. V.;
Mazur, Yu. I.;
Wang, Zh. M.;
Schmidbauer, M.;
Kolomys, O. F.;
Valakh, M. Ya.;
Manasreh, M. O.;
Salamo, G. J.

Publication type:

Article

Optical absorption and photoluminescence of narrow-Gap Hg1−x−yCdxMnySe single crystals.

Published in:

Physica Status Solidi (B), 1996, v. 195, n. 2, p. 595, doi. 10.1002/pssb.2221950227

By:

Mazur, Yu. I.;
Tarasov, G. G.;
Lavorik, S. R.;
Tomm, J. W.;
Kissel, H.;
Hoerstel, W.

Publication type:

Article

Auger Recombination via Defects in Tellurium.

Published in:

Physica Status Solidi (B), 1990, v. 162, n. 2, p. 531, doi. 10.1002/pssb.2221620225

By:

Mazur, Yu. I.;
Rubo, Yu. G.;
Snitko, O. V.;
Strikha, M. V.

Publication type:

Article

Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures.

Published in:

Nanoscale Research Letters, 2010, v. 5, n. 6, p. 991, doi. 10.1007/s11671-010-9590-5

By:

Mazur, Yu. I.;
Dorogan, V. G.;
Marega, Jr., E.;
Cesar, D. F.;
Lopez-Richard, V.;
Marques, G. E.;
Zhuchenko, Z. Ya.;
Tarasov, G. G.;
Salamo, G. J.

Publication type:

Article

Unusual role of the substrate in droplet-induced GaAs/AlGaAs quantum-dot pairs.

Published in:

Physica Status Solidi - Rapid Research Letters, 2008, v. 2, n. 6, p. 281, doi. 10.1002/pssr.200802196

By:

Wang, Zh. M.;
Mazur, Yu. I.;
Sablon, K. A.;
Mishima, T. D.;
Johnson, M. B.;
Salamo, G. J.

Publication type:

Article

Resonant Raman Scattering and Atomic Force Microscopy of InGaAs/GaAs Multilayer Nanostructures with Quantum Dots.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 127, doi. 10.1134/1.1852661

By:

Valakh, M. Ya.;
Strelchuk, V. V.;
Kolomys, A. F.;
Mazur, Yu. I.;
Wang, Z. M.;
Xiao, M.;
Salamo, G. J.

Publication type:

Article

Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 75, doi. 10.15407/spqeo19.01.075

By:

Iliash, S. A.;
Kondratenko, S. V.;
Yakovliev, A. S.;
Kunets, Vas. P.;
Mazur, Yu. I.;
Salamo, G. J.

Publication type:

Article

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+ -GaN ohmic contacts.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 313

By:

Sachenko, A. V.;
Belyaev, A. E.;
Boltovets, N. S.;
Kapitanchuk, L. M.;
Klad'ko, V. P.;
Konakova, R. V.;
Kuchuk, A. V.;
Korostinskaya, T. V.;
Pilipchuk, A. S.;
Sheremet, V. N.;
Mazur, Yu. I.;
Ware, M. E.;
Salamo, G. J.

Publication type:

Article

Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 36

By:

Streichuk, V. V.;
Kladko, V. P.;
Yefanov, O. M.;
Kolomys, O. F.;
Gudymenko, O. I.;
Valakh, M. Ya.;
Mazur, Yu. I.;
Wang, Z. M.;
Salamo, G. J.

Publication type:

Article

Diluted magnetic A1-xMnxB semiconductors.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 2, p. 119

By:

Bryksa, V.P.;
Tarasov, G.G.;
Masselink, W.T.;
Nolting, W.;
Mazur, Yu I.;
Salamo, G.J.

Publication type:

Article

Ferromagnetism induced in diluted A1--XMnXB semidconductors.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 1, p. 43

By:

Bryksa, V. P.;
Tarasov, G. G.;
Masselink, W. T.;
Nolting, W.;
Mazur, Yu. I.;
Salamo, G. J.

Publication type:

Article

Microstructural Aspects of Nucleation and Growth of (In,Ga)As-GaAs(001) Islands with Low Indium Content.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 12, p. 1555, doi. 10.1007/s11664-007-0258-6

By:

Kladko, V. P.;
Strelchuk, V. V.;
Kolomys, A. F.;
Slobodian, M. V.;
Mazur, Yu. I.;
Wang, Zh. M.;
Kunets, Vas. P.;
Salamo, G. J.

Publication type:

Article

Works by Mazur, Yu. I.

Investigation of deep levels in InGaAs channels comprising thin layers of InAs.

Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains.

Optical absorption and photoluminescence of narrow-Gap Hg<sub>1−x−y</sub>Cd<sub>x</sub>Mn<sub>y</sub>Se single crystals.

Auger Recombination via Defects in Tellurium.

Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures.

Unusual role of the substrate in droplet-induced GaAs/AlGaAs quantum-dot pairs.

Resonant Raman Scattering and Atomic Force Microscopy of InGaAs/GaAs Multilayer Nanostructures with Quantum Dots.

Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures.

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n<sup>+</sup> -GaN ohmic contacts.

Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study.

Diluted magnetic A<sub>1-x</sub>Mn<sub>x</sub>B semiconductors.

Ferromagnetism induced in diluted A<sub>1--X</sub>Mn<sub>X</sub>B semidconductors.

Microstructural Aspects of Nucleation and Growth of (In,Ga)As-GaAs(001) Islands with Low Indium Content.