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Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 4, p. 363
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- Article
Extremal character of the change in the reverse current of silicon p[sup +]–n structures during the formation of nickel Ohmic contacts.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 455, doi. 10.1134/1.1262144
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- Article
Features of the deformation of Ge–GaAs heterostructures under concentrated loads.
- Published in:
- Technical Physics Letters, 1998, v. 24, n. 6, p. 475, doi. 10.1134/1.1262160
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- Article
GaAs nanolayers obtained by pulsed cooling of a saturated fluxed melt.
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- Technical Physics Letters, 1997, v. 23, n. 9, p. 692, doi. 10.1134/1.1261658
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- Article
Influence of physical and chemical surface treatment on the photoluminescence of porous silicon.
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- Technical Physics, 1999, v. 44, n. 1, p. 122, doi. 10.1134/1.1259266
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- Article
Effect of thermal annealing and chemical treatment on the photolumineecenca of porous silicon
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- Semiconductors, 1998, v. 32, n. 4, p. 443, doi. 10.1134/1.1187412
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- Article
Fabrication of InAs/GaAs quantum dot structures by pulse cooling of high-temperature solution.
- Published in:
- Inorganic Materials, 2009, v. 45, n. 12, p. 1326, doi. 10.1134/S0020168509120024
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- Article