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3.8 THz Quantum Cascade Laser Grown by Metalorganic Vapor Phase Epitaxy.
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- Technical Physics Letters, 2023, v. 49, p. S159, doi. 10.1134/S1063785023900637
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- Article
3.3 THz Quantum Cascade Laser Based on a Three GaAs/AlGaAs Quantum-Well Active Module with an Operating Temperature above 120 K.
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- Semiconductors, 2022, v. 56, n. 2, p. 71, doi. 10.1134/S1063782622010080
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- Article
Generation of Terahertz Radiation in InP:Fe Crystals Due to Second-Order Lattice Nonlinearity.
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- Semiconductors, 2021, v. 55, n. 10, p. 785, doi. 10.1134/S1063782621090189
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- Article
Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons.
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- Semiconductors, 2020, v. 54, n. 9, p. 1069, doi. 10.1134/S1063782620090195
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Specific Growth Features of Nanostructures for Terahertz Quantum Cascade Lasers and Their Physical Properties.
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- Semiconductors, 2020, v. 54, n. 9, p. 1092, doi. 10.1134/S1063782620090298
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- Article
Investigation of the Photosensitivity of Narrow-Gap and Gapless HgCdTe Solid Solutions in the Terahertz and Sub-Terahertz Range.
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- Semiconductors, 2020, v. 54, n. 9, p. 1096, doi. 10.1134/S1063782620090249
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- Article
Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor Structures.
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- Semiconductors, 2019, v. 53, n. 9, p. 1217, doi. 10.1134/S1063782619090185
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Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors.
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- Semiconductors, 2018, v. 52, n. 12, p. 1590, doi. 10.1134/S1063782618120163
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Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz.
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- Semiconductors, 2018, v. 52, n. 11, p. 1380, doi. 10.1134/S1063782618110118
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- Article
Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T.
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- Semiconductors, 2018, v. 52, n. 11, p. 1386, doi. 10.1134/S1063782618110052
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- Article
Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells.
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- Semiconductors, 2017, v. 51, n. 1, p. 38, doi. 10.1134/S1063782617010109
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Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm.
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- Semiconductors, 2016, v. 50, n. 12, p. 1669, doi. 10.1134/S1063782616120125
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- Article
Imaging and Gas Spectroscopy for Health Protection in Sub-THz Frequency Range.
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- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S0129156416400176
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Long-wavelength injection lasers based on PbSnSe alloys and their use in solid-state spectroscopy.
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- Semiconductors, 2015, v. 49, n. 12, p. 1623, doi. 10.1134/S1063782615120118
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- Article
Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures.
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- Semiconductors, 2015, v. 49, n. 2, p. 191, doi. 10.1134/S1063782615020141
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Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range.
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- Semiconductors, 2014, v. 48, n. 11, p. 1463, doi. 10.1134/S1063782614110165
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Rashba spin splitting and cyclotron resonance in strained InGaAs/InP heterostructures with a two-dimensional electron gas.
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- Semiconductors, 2013, v. 47, n. 11, p. 1485, doi. 10.1134/S1063782613110092
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Features of the persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells and a tunneling-transparent barrier.
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- Semiconductors, 2012, v. 46, n. 11, p. 1396, doi. 10.1134/S1063782612110206
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Diagnostics of quantum cascade structures by optical methods in the near infrared region.
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- Semiconductors, 2012, v. 46, n. 11, p. 1411, doi. 10.1134/S1063782612110103
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Terahertz spectroscopy of quantum-well narrow-bandgap HgTe/CdTe-based heterostructures.
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- JETP Letters, 2011, v. 92, n. 11, p. 756, doi. 10.1134/S0021364010230086
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Emission spectra of terahertz quantum cascade laser.
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- Radiophysics & Quantum Electronics, 2009, v. 52, n. 7, p. 494, doi. 10.1007/s11141-009-9156-5
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Resonance detection of terahertz radiation in submicrometer field-effect GaAs/AlGaAs transistors with two-dimensional electron gas.
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- Semiconductors, 2009, v. 43, n. 4, p. 528, doi. 10.1134/S106378260904023X
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Difference-frequency generation in a butt-join diode laser.
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- Semiconductors, 2009, v. 43, n. 2, p. 208, doi. 10.1134/S1063782609020171
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- Article