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Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer.
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- Semiconductors, 2018, v. 52, n. 5, p. 593, doi. 10.1134/S1063782618050214
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The Electronic Structure of the Cs/<italic>n</italic>-GaN(0001) Nano-Interface.
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- Technical Physics Letters, 2018, v. 44, n. 3, p. 247, doi. 10.1134/S106378501803015X
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- Article
X-ray spectroscopic examination of thin HfO<sub>2</sub> films ALD- and MOCVD-grown on the Si(100) surface.
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- Technical Physics, 2010, v. 55, n. 7, p. 1045, doi. 10.1134/S1063784210070200
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- Article
Spectroscopic investigations of the stability of porous silicon structure obtained by etching Si(100) in aqueous ammonium fluoride solution.
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- Technical Physics Letters, 2010, v. 36, n. 2, p. 119, doi. 10.1134/S1063785010020082
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- Article