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Native point defects and their implications for the Dirac point gap at MnBi<sub>2</sub>Te<sub>4</sub>(0001).
- Published in:
- NPJ Quantum Materials, 2022, v. 7, n. 1, p. 1, doi. 10.1038/s41535-021-00414-6
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- Article
Transport Properties of the Magnetic Topological Insulators Family (MnBi<sub>2</sub>Te<sub>4</sub>)(Bi<sub>2</sub>Te<sub>3</sub>)<sub>m</sub> (m = 0, 1, ..., 6).
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- JETP Letters, 2023, v. 118, n. 12, p. 905, doi. 10.1134/S0021364023603305
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Temperature Studies of Raman Spectra in MnBi<sub>2</sub>Te<sub>4</sub> and MnSb<sub>2</sub>Te<sub>4</sub> Magnetic Topological Insulators.
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- JETP Letters, 2023, v. 118, n. 5, p. 357, doi. 10.1134/S0021364023602543
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- Article
Lattice Dynamics of Bi<sub>2</sub>Те<sub>3</sub> and Vibrational Modes in Raman Scattering of Topological Insulators MnBi<sub>2</sub>Te<sub>4</sub>·n(Bi<sub>2</sub>Te<sub>3</sub>).
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- JETP Letters, 2022, v. 115, n. 12, p. 749, doi. 10.1134/S0021364022600987
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- Article
Electrical and Optical Properties of Unrelaxed InAs<sub>1 –</sub><sub>x</sub>Sb<sub>x</sub> Heteroepitaxial Structures.
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- Semiconductors, 2019, v. 53, n. 7, p. 906, doi. 10.1134/S1063782619070091
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Optical Properties of Polyethylene Filled with Bi<sub>2</sub>Te<sub>3</sub> Nanocrystallites.
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- Semiconductors, 2019, v. 53, n. 2, p. 224, doi. 10.1134/S106378261902009X
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- Article
Anharmonicity of Lattice Vibrations in Bi<sub>2</sub>Se<sub>3</sub> Single Crystals.
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- Semiconductors, 2019, v. 53, n. 3, p. 291, doi. 10.1134/S1063782619030035
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- Article
The Effect of Uniaxial Static Pressure on the Behavior of an Aluminum Acceptor Impurity in Silicon.
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- JETP Letters, 2004, v. 80, n. 5, p. 339, doi. 10.1134/1.1825118
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- Article
Ionization Mechanisms of Aluminum Acceptor Impurity in Silicon.
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- JETP Letters, 2004, v. 79, n. 1, p. 21, doi. 10.1134/1.1675914
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- Article
Measurement of the Magnetic Moment of a Negative Muon in Zinc and Cadmium.
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- JETP Letters, 2002, v. 76, n. 12, p. 693, doi. 10.1134/1.1556206
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- Article
Interactions of [sub μ]Al Acceptor Impurity in Weakly and Heavily Doped Silicon.
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- JETP Letters, 2002, v. 76, n. 7, p. 440, doi. 10.1134/1.1528698
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- Article
Magnetic Moment Relaxation of a Shallow Acceptor Center in Heavily Doped Silicon.
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- JETP Letters, 2001, v. 73, n. 12, p. 674, doi. 10.1134/1.1397753
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- Article
Isotope Effect in Nuclear Capture of Negative Muons in Xenon.
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- JETP Letters, 2000, v. 71, n. 11, p. 451, doi. 10.1134/1.1307990
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μ[sup –]Spin Rotation Study of the Temperature-Dependent Relaxation Rate of Acceptor Centers in Silicon.
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- JETP Letters, 2000, v. 71, n. 10, p. 438, doi. 10.1134/1.568372
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- Article
Total rates of nuclear capture of negative muons in the isotopes [sup 132]Xe and [sup 40]Ar.
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- JETP Letters, 1999, v. 69, n. 3, p. 192, doi. 10.1134/1.568005
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Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ[sup -]SR method.
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- JETP Letters, 1998, v. 68, n. 1, p. 64, doi. 10.1134/1.567822
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Measurement of the rate of nuclear capture of negative muons in the isotopes [sup 84]Kr and [sup 136]Xe.
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- JETP Letters, 1998, v. 67, n. 5, p. 318, doi. 10.1134/1.567666
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Relaxation and shift of the precession frequency of the spin of a negative muon in n-type silicon.
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- JETP Letters, 1996, v. 63, n. 7, p. 566, doi. 10.1134/1.567065
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- Article
Impact of Co Atoms on the Electronic Structure of Bi<sub>2</sub>Te<sub>3</sub> and MnBi<sub>2</sub>Te<sub>4</sub> Topological Insulators.
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- Journal of Experimental & Theoretical Physics, 2022, v. 134, n. 5, p. 607, doi. 10.1134/S1063776122030086
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- Article
Two-Phonon Absorption Spectra and Phase Transition in TlGaSe<sub>2</sub>.
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- Physica Status Solidi (B), 1988, v. 145, n. 2, p. K103, doi. 10.1002/pssb.2221450246
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- Article
Band structure of TIGaSe<sub>2</sub> ternary layered crystals.
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- Physica Status Solidi (B), 1986, v. 133, n. 1, p. 171, doi. 10.1002/pssb.2221330120
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- Article
Band structure of TlGaSe<sub>2</sub>.
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- Physica Status Solidi (B), 1983, v. 119, n. 1, p. 41, doi. 10.1002/pssb.2221190103
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- Article
Excitons in TlGaSe<sub>2</sub>.
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- Physica Status Solidi (B), 1981, v. 103, n. 1, p. K61, doi. 10.1002/pssb.2221030163
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- Article
Near-Band-Edge Optical Properties of TlGaS<sub>2x</sub>Se<sub>2(1−x</sub>) Mixed Crystals.
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- Physica Status Solidi (B), 1980, v. 102, n. 1, p. K19, doi. 10.1002/pssb.2221020146
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- Article
Photoinduced Reversible Local Deformation of the Surface Relief in Bulk Single Crystals of TlInSe<sub>2</sub>, TlGaTe<sub>2</sub>, and TlSe.
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- Technical Physics Letters, 2018, v. 44, n. 7, p. 643, doi. 10.1134/S1063785018070295
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- Article
Neutron diffraction study of the crystal structure of TlInSe<sub>2</sub> at high pressure.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2019, v. 33, n. 15, p. N.PAG, doi. 10.1142/S0217979219501492
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Photoluminescence and spectroscopic ellipsometry of single crystal MnGa<sub>2</sub>S<sub>4</sub>.
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- Bulletin of Materials Science, 2024, v. 47, n. 2, p. 1, doi. 10.1007/s12034-024-03197-1
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- Article
Measurements of the Magnetic Moment of the Negative Muon in the Bound State in Various Atoms.
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- Journal of Experimental & Theoretical Physics, 2001, v. 93, n. 5, p. 941, doi. 10.1134/1.1427105
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- Article
The Relaxation Rate of the Magnetic Moment of a Shallow Acceptor Center as a Function of Impurity Concentration in Silicon.
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- Journal of Experimental & Theoretical Physics, 2001, v. 92, n. 6, p. 1004, doi. 10.1134/1.1385641
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- Article
Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi2Te4.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-70089-9
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- Article
Effect of High Pressure on the Electrical Conductivity of TlInX<sub>2</sub> (X = Se, Te) Layered Semiconductors.
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- Physica Status Solidi (B), 1993, v. 178, n. 2, p. 403, doi. 10.1002/pssb.2221780217
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Pressure Induced Semiconductor-Metal Transition in Tl-Se Layered Semiconductor.
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- Physica Status Solidi (B), 1991, v. 167, n. 2, p. K97, doi. 10.1002/pssb.2221670242
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Tl-Me Bond and Semiconductor-to-Metal Transition in TlMeX<sub>2</sub> Low-Dimensional Crystals.
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- Physica Status Solidi (B), 1990, v. 159, n. 2, p. K83, doi. 10.1002/pssb.2221590252
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- Article
Two-Phonon Absorption in TlInTe<sub>2</sub> and TlGaTe<sub>2</sub>.
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- Physica Status Solidi (B), 1988, v. 148, n. 1, p. K89, doi. 10.1002/pssb.2221480159
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- Article