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Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE.
- Published in:
- Journal of Thermal Analysis & Calorimetry, 2018, v. 133, n. 2, p. 1099, doi. 10.1007/s10973-018-7116-z
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- Article
Mechanisms of Optical Gain in Heavily Doped Al<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N:Si Structures (x = 0.56–1).
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- Semiconductors, 2024, v. 58, n. 5, p. 386, doi. 10.1134/S1063782624050026
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- Article
Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers.
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- Semiconductors, 2022, v. 56, n. 6, p. 352, doi. 10.1134/S1063782622070077
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- Article
GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow.
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- Semiconductors, 2022, v. 56, n. 6, p. 340, doi. 10.1134/S1063782622070053
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- Article
Formation of a Graphene-Like SiN Layer on the Surface Si(111).
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- Semiconductors, 2018, v. 52, n. 12, p. 1511, doi. 10.1134/S1063782618120151
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- Article
Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers.
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- Semiconductors, 2018, v. 52, n. 6, p. 789, doi. 10.1134/S1063782618060143
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- Article
Features of Optical Gain in Heavily Doped Al<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N:Si-Structures.
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- Technical Physics Letters, 2021, v. 47, n. 9, p. 692, doi. 10.1134/S1063785021070178
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- Article
Optical Gain in Heavily Doped Al<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N:Si Structures.
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- Technical Physics Letters, 2019, v. 45, n. 9, p. 951, doi. 10.1134/S1063785019090189
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- Article
Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors.
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- Technical Physics Letters, 2019, v. 45, n. 8, p. 761, doi. 10.1134/S1063785019080108
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- Article
Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films.
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- Optics & Spectroscopy, 2019, v. 127, n. 1, p. 36, doi. 10.1134/S0030400X19070208
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- Article