Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz.
- Published in:
- Nano Research, 2021, v. 14, n. 6, p. 1961, doi. 10.1007/s12274-020-3059-3
- By:
- Publication type:
- Article
Works matching AU Male, James P.
Results: 6
1
2
Dislocations Stabilized by Point Defects Increase Brittleness in PbTe.
- Published in:
- Advanced Functional Materials, 2021, v. 31, n. 52, p. 1, doi. 10.1002/adfm.202108006
- By:
- Publication type:
- Article
3
Suppressing Charged Cation Antisites via Se Vapor Annealing Enables p‐Type Dopability in AgBiSe<sub>2</sub>–SnSe Thermoelectrics (Adv. Mater. 38/2022).
- Published in:
- Advanced Materials, 2022, v. 34, n. 38, p. 1, doi. 10.1002/adma.202204132
- By:
- Publication type:
- Article
4
Suppressing Charged Cation Antisites via Se Vapor Annealing Enables p‐Type Dopability in AgBiSe<sub>2</sub>–SnSe Thermoelectrics.
- Published in:
- Advanced Materials, 2022, v. 34, n. 38, p. 1, doi. 10.1002/adma.202204132
- By:
- Publication type:
- Article
5
Suppressing Charged Cation Antisites via Se Vapor Annealing Enables p‐Type Dopability in AgBiSe<sub>2</sub>–SnSe Thermoelectrics (Adv. Mater. 38/2022)
- Published in:
- Advanced Materials, 2022, v. 34, n. 36, p. 1, doi. 10.1002/adma.202204132
- By:
- Publication type:
- Article
6
Hidden Local Symmetry Breaking in Silver Diamondoid Compounds is Root Cause of Ultralow Thermal Conductivity.
- Published in:
- Advanced Materials, 2022, v. 34, n. 24, p. 1, doi. 10.1002/adma.202202255
- By:
- Publication type:
- Article