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Increasing the Optical Power of InGaAs/GaAs Microdisk Lasers Transferred to a Silicon Substrate by Thermal Compression.
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- Technical Physics Letters, 2022, v. 48, n. 2, p. 90, doi. 10.1134/S1063785022030105
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- Article
Energy Consumption at High-Frequency Modulation of an Uncooled InGaAs/GaAs/AlGaAs Microdisk Laser.
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- Technical Physics Letters, 2021, v. 47, n. 9, p. 685, doi. 10.1134/S1063785021070142
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- Article
High-Speed Photodetectors for the 950–1100 nm Optical Range Based on In0.4Ga0.6As/GaAs Quantum Well-Dot Nanostructures.
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- Technical Physics Letters, 2020, v. 46, n. 12, p. 1219, doi. 10.1134/S106378502012024X
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- Article
Voting Originated Social Dynamics: Quartile Analysis of Stochastic Environment Peculiarities.
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- Automation & Remote Control, 2020, v. 81, n. 10, p. 1865, doi. 10.1134/S0005117920100069
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- Article
Experimental and Theoretical Examination of the Photosensitivity Spectra of Structures with In0.4Ga0.6As Quantum Well-Dots of the Optical Range (900–1050 nm).
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- Technical Physics Letters, 2020, v. 46, n. 3, p. 203, doi. 10.1134/S1063785020030116
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- Article
A Valve Magnetic System with Increased Operational Sensitivity of Overcurrent Release.
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- Russian Electrical Engineering, 2019, v. 90, n. 8, p. 549, doi. 10.3103/S1068371219080108
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- Article
Temperature Dependence of the Parameters of 1.55-μm Semiconductor Lasers with Thin Quantum Wells Based on Phosphorus-Free Heterostructures.
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- Technical Physics Letters, 2019, v. 45, n. 6, p. 549, doi. 10.1134/S1063785019060129
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- Article
The Energy Efficiency of an Automatic Control System of Subway Train Movement and Requirements for Its Subsystems.
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- Russian Electrical Engineering, 2018, v. 89, n. 9, p. 546, doi. 10.3103/S1068371218090031
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- Article
Power Characteristics and Temperature Dependence of the Angular Beam Divergence of Lasers with a Near-Surface Active Region.
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- Technical Physics Letters, 2018, v. 44, n. 8, p. 675, doi. 10.1134/S1063785018080151
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- Article
Modeling of a hydrocarbon gases mixture combustion.
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- Automation of Technological & Business Processes / Avtomatizaciâ Tehnologiceskih i Biznes-Processov, 2014, v. 6, n. 4, p. 22, doi. 10.15673/2312-3125.20/2015.36954
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- Article
A METHOD FOR VVER FUEL ELEMENT CLADDING RELIABILITY PREDICTION.
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- Nuclear Physics & Atomic Energy, 2014, v. 15, n. 1, p. 50
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- Article
Production and decay of subcritical nuclei in a solid solution.
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- JETP Letters, 2010, v. 91, n. 11, p. 586, doi. 10.1134/S0021364010110093
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- Article
High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm.
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- Technical Physics Letters, 2008, v. 34, n. 12, p. 1008, doi. 10.1134/S1063785008120055
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- Article
The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots.
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- Semiconductors, 2007, v. 41, n. 10, p. 1224, doi. 10.1134/S1063782607100181
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- Article
Models of fluid filtration in anisotropic fractured porous media.
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- Doklady Physics, 2007, v. 52, n. 9, p. 510, doi. 10.1134/S1028335807090145
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- Article
Nonequilibrium Room-Temperature Carrier Distribution in InAs Quantum Dots Overgrown with Thin AlAs/InAlAs Layers.
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- Semiconductors, 2005, v. 39, n. 10, p. 1188, doi. 10.1134/1.2085268
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- Article
Fabrication of Semiconductor- and Polymer-Based Photonic Crystals Using Nanoimprint Lithography.
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- Technical Physics, 2005, v. 50, n. 8, p. 1043, doi. 10.1134/1.2014536
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- Article
Stresses in Selectively Oxidized GaAs/(AlGa)<sub>x</sub>O<sub>y</sub> Structures.
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- Semiconductors, 2005, v. 39, n. 7, p. 748, doi. 10.1134/1.1992627
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- Article
Design and Fabrication Technology for Arrays for Vertical-Cavity Surface-Emitting Lasers.
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- Semiconductors, 2005, v. 39, n. 4, p. 462, doi. 10.1134/1.1900263
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- Article
Effect of p-Doping of the Active Region on the Temperature Stability of InAs/GaAs QD Lasers.
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- Semiconductors, 2005, v. 39, n. 4, p. 477, doi. 10.1134/1.1900266
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- Article
Temperature Dependence of the Effective Coefficient of Auger Recombination in 1.3μm InAs/GaAs QD Lasers.
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- Semiconductors, 2005, v. 39, n. 4, p. 481, doi. 10.1134/1.1900267
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- Article
Effect of Nonradiative Recombination Centers on Photoluminescence Efficiency in Quantum Dot Structures.
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- Semiconductors, 2004, v. 38, n. 10, p. 1207, doi. 10.1134/1.1808830
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- Article
Lasing Wavelength of Quantum Dot Heterostructures Controlled within the 1.3–0.85μm Range by Means of High-Temperature Annealing.
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- Technical Physics Letters, 2004, v. 30, n. 8, p. 644, doi. 10.1134/1.1792300
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Control over the Parameters of InAs–GaAs Quantum Dot Arrays in the Stranski–Krastanow Growth Mode.
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- Semiconductors, 2003, v. 37, n. 7, p. 861, doi. 10.1134/1.1592865
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- Article
Longwave Generation in Laser Structures Based on InGaAs(N) Quantum Wells on GaAs Substrates.
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- Technical Physics Letters, 2003, v. 29, n. 5, p. 433, doi. 10.1134/1.1579817
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- Article
Modeling Physical Impact on Water Environment at Accidents on Underwater Gas Pipelines.
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- Water Resources, 2003, v. 30, n. 3, p. 290, doi. 10.1023/A:1023886230256
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- Article
Long-Term Stability of Long-Wavelength (>1.25 μm) Quantum-Dot Lasers Fabricated on GaAs Substrates.
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- Technical Physics, 2003, v. 48, n. 1, p. 131, doi. 10.1134/1.1538744
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- Article
High Efficiency (η[sub D] > 80%) Long Wavelength (λ > 1.25 μm) Quantum Dot Diode Lasers on GaAs Substrates.
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- Semiconductors, 2002, v. 36, n. 11, p. 1315, doi. 10.1134/1.1521237
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- Article
The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix.
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- Semiconductors, 2002, v. 36, n. 9, p. 1020, doi. 10.1134/1.1507285
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- Article
On Equivalence of Ideal and Fictitious Porous Media.
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- Doklady Physics, 2001, v. 46, n. 12, p. 881, doi. 10.1134/1.1433535
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- Article
Filtration-Flow Effects and Variants of Constructing Nonlinear Filtration Laws in the Case of Violation of the Darcy Rule with Isotropic Filtration Properties.
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- Doklady Physics, 2000, v. 45, n. 7, p. 350, doi. 10.1134/1.1307088
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- Article
Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots.
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- Semiconductors, 2000, v. 34, n. 3, p. 323, doi. 10.1134/1.1187980
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- Article
A Spatially Single-Mode Laser for a Range of 1.25–1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate.
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- Semiconductors, 2000, v. 34, n. 1, p. 119, doi. 10.1134/1.1187954
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Gain characteristics of quantum-dot injection lasers.
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- Semiconductors, 1999, v. 33, n. 9, p. 1013, doi. 10.1134/1.1187828
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- Article
Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface.
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- Semiconductors, 1999, v. 33, n. 8, p. 886, doi. 10.1134/1.1187805
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Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands.
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- Semiconductors, 1999, v. 33, n. 8, p. 901, doi. 10.1134/1.1187627
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- Article
Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures.
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- Semiconductors, 1999, v. 33, n. 8, p. 929, doi. 10.1134/1.1187631
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- Article
Investigation of MOVPE-grown GaN layers doped with As atoms.
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- Semiconductors, 1999, v. 33, n. 7, p. 728, doi. 10.1134/1.1187770
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- Article
Quantum-dot injection heterolaser with 3.3 W output power.
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- Technical Physics Letters, 1999, v. 25, n. 6, p. 438, doi. 10.1134/1.1262530
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- Article
Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host.
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- Semiconductors, 1999, v. 33, n. 4, p. 467, doi. 10.1134/1.1187713
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- Article
Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates.
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- Semiconductors, 1999, v. 33, n. 2, p. 153, doi. 10.1134/1.1187662
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- Article
Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix.
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- Semiconductors, 1999, v. 33, n. 2, p. 165, doi. 10.1134/1.1187664
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- Article
Gain in injection lasers based on self-organized quantum dots.
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- Semiconductors, 1999, v. 33, n. 2, p. 184, doi. 10.1134/1.1187668
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- Article
Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix.
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- Semiconductors, 1999, v. 33, n. 1, p. 80, doi. 10.1134/1.1187651
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- Article
Effect of the quantum-dot surface density in the active region on injection-laser characteristics
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- Semiconductors, 1998, v. 32, n. 9, p. 997, doi. 10.1134/1.1187532
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- Article
Spontaneous long-wavelength interlevel emission in quantum-dot laser structures.
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- Technical Physics Letters, 1998, v. 24, n. 8, p. 590
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- Article
Lasing in submonolayer InAs/AlGaAs structures without external optical confinement.
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- Technical Physics Letters, 1998, v. 24, n. 7, p. 567, doi. 10.1134/1.1262198
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- Article
Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 351, doi. 10.1134/1.1262118
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- Article
Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
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- Semiconductors, 1998, v. 32, n. 1, p. 84, doi. 10.1134/1.1187363
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- Article
Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm.
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- Technical Physics Letters, 1998, v. 24, n. 1, p. 22, doi. 10.1134/1.1261977
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- Article