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Optical Properties of Zinc Selenide Produced by Isovalent Substitution.
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- Russian Physics Journal, 2003, v. 46, n. 7, p. 736, doi. 10.1023/B:RUPJ.0000008206.44217.d3
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- Article
Luminescence of crystals ZnSe 〈Al〉:Gd.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 1, p. 80, doi. 10.15407/spqeo21.01.080
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- Article
Influence of ytterbium impurity on luminescent properties of ZnSe〈Al〉 crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 391, doi. 10.15407/spqeo19.04.394
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- Article
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 338
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Perspective of surface modification of CdTe single crystal substrate for creation of photosensitive barrier structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 2, p. 143
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- Article
Direct current transport mechanisms in n-InSe/p-CdTe heterostructure.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 2, p. 124, doi. 10.15407/spqeo11.02.124
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- Article
Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 4, p. 458
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- Article
Surface Barrier Diode Based on Zinc Selenide with a Passivating Zinc Oxide Film.
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- Technical Physics Letters, 2003, v. 29, n. 9, p. 712, doi. 10.1134/1.1615543
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- Article
Effect of Chemical Treatment of the Surface on Optical Properties of ZnSe<Al> Substrates.
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- Journal of Nano- & Electronic Physics, 2019, v. 11, n. 1, p. 1, doi. 10.21272/jnep.11(1).01023
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- Article
Thermal Annealing Effect on Optical Properties of the Cadmiun Telluride Films.
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- Journal of Nano- & Electronic Physics, 2017, v. 9, n. 5, p. 1, doi. 10.21272/jnep.9(5).05047
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- Article
Preparation and Optical Properties of Substrates with Surface Nanostructure.
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- Journal of Nano- & Electronic Physics, 2017, v. 9, n. 5, p. 1, doi. 10.21272/jnep.9(5).05026
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- Article
Luminescence of (ZnSe:Al):Yb Сrystals at 4.2 K.
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- Semiconductors, 2019, v. 53, n. 3, p. 310, doi. 10.1134/S1063782619030114
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- Article
The nature of edge luminescence of CdTe:Mg diffusion layers.
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- Semiconductors, 2010, v. 44, n. 9, p. 1167, doi. 10.1134/S1063782610090101
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- Article
PROSPECTS OF USING SURFACE AND BARRIER CdTe-DIODES IN SOLAR ENERGY.
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- Sensor Electronics & Microsystems Technologies / Sensorna Elektronika i Microsystemni Tekhnologii, 2019, v. 16, n. 2, p. 32, doi. 10.18524/1815-7459.2019.2.171227
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- Article
The Effect of Surface Preparation on Physical Properties of Ni--ZnSe Junctions.
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- Acta Physica Polonica: A, 2014, v. 126, n. 5, p. 1076, doi. 10.12693/APhysPolA.126.1076
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- Article
Reduction of the Optical Losses in CdTe/ZnTe Thin-Film Solar Cells.
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- Acta Physica Polonica: A, 2014, v. 126, n. 5, p. 1072, doi. 10.12693/APhysPolA.126.1072
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Electrical Properties of p-ZnTe/n-CdTe Photodiodes.
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- Acta Physica Polonica: A, 2012, v. 122, n. 6, p. 1077, doi. 10.12693/APhysPolA.122.1077
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- Article
Anharmonic Optical Phonon Effects in ZnO Nanocrystals.
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- Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 678, doi. 10.12693/APhysPolA.119.678
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- Article
Electrical Properties of Anisotype ZnO/ZnSe Heterojunctions.
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- Acta Physica Polonica: A, 2009, v. 116, n. 5, p. 859, doi. 10.12693/APhysPolA.116.859
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- Article
The origin of edge luminescence in diffusion ZnSe:Sn layers.
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- Semiconductors, 2007, v. 41, n. 7, p. 784, doi. 10.1134/S1063782607070020
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- Article
Specific Features of the Physical Properties of a Modified CdTe Surface.
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- Semiconductors, 2005, v. 39, n. 7, p. 792, doi. 10.1134/1.1992636
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- Article
Mechanisms of Photocurrent Generation in In[sub 2]O[sub 3]–InSe Heterojunctions.
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- Semiconductors, 2003, v. 37, n. 12, p. 1387, doi. 10.1134/1.1634659
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- Article