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Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications.
- Published in:
- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-44096-5
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Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications.
- Published in:
- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-44096-5
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- Publication type:
- Article
Study of scaling effect of ferroelectric gate stack in planar InGaAs MOSFET.
- Published in:
- International Journal of Numerical Modelling, 2023, v. 36, n. 2, p. 1, doi. 10.1002/jnm.3059
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- Article
DC and RF analysis of a misaligned heterostructure GaSb/SiGe junctionless DG-MOSFET.
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- Pramana: Journal of Physics, 2022, v. 96, n. 4, p. 1, doi. 10.1007/s12043-022-02418-8
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- Article
Influence of Ga-doped transparent conducting ZnO thin film for efficiency enhancement in organic light-emitting diode applications.
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- Applied Physics A: Materials Science & Processing, 2021, v. 127, n. 4, p. 1, doi. 10.1007/s00339-021-04339-6
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- Article
Analysis of scaling of thickness of the buffer layer on analog/RF and circuit performance of InAs‐OI‐Si MOSFET using NQS model.
- Published in:
- International Journal of Numerical Modelling, 2020, v. 33, n. 1, p. N.PAG, doi. 10.1002/jnm.2664
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- Article