Works by Maikap, Siddheswar

Results: 17

Analysis of weakly bonded oxygen in HfO2/SiO2/Si stacks by using HRBS and ARXPS.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 5, p. 475, doi. 10.1007/s10854-009-9941-0

By:

Ta-Chang Tien;
Li-Chuan Lin;
Lurng-Shehng Lee;
Chi-Jen Hwang;
Maikap, Siddheswar;
Yuri Shulga

Publication type:

Article

Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO/TiO/TiN Structure.

Published in:

Nano-Micro Letters, 2015, v. 7, n. 4, p. 392, doi. 10.1007/s40820-015-0055-3

By:

Jana, Debanjan;
Samanta, Subhranu;
Roy, Sourav;
Lin, Yu;
Maikap, Siddheswar

Publication type:

Article

Detection of pH and Enzyme-Free HO Sensing Mechanism by Using GdO Membrane in Electrolyte-Insulator-Semiconductor Structure.

Published in:

Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1657-5

By:

Kumar, Pankaj;
Maikap, Siddheswar;
Qiu, Jian-Tai;
Jana, Surajit;
Roy, Anisha;
Singh, Kanishk;
Cheng, Hsin-Ming;
Chang, Mu-Tung;
Mahapatra, Rajat;
Chiu, Hsien-Chin;
Yang, Jer-Ren

Publication type:

Article

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO/WO/W Structure.

Published in:

Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1602-7

By:

Chakrabarti, Somsubhra;
Samanta, Subhranu;
Maikap, Siddheswar;
Rahaman, Sheikh;
Cheng, Hsin-Ming

Publication type:

Article

Resistive and New Optical Switching Memory Characteristics Using Thermally Grown GeSe Film in Cu/GeSe/W Structure.

Published in:

Nanoscale Research Letters, 2015, v. 10, n. 1, p. 1, doi. 10.1186/s11671-015-1090-1

By:

Jana, Debanjan;
Chakrabarti, Somsubhra;
Rahaman, Sheikh;
Maikap, Siddheswar

Publication type:

Article

Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrO/GdO/W cross-point memories.

Published in:

Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-12

By:

Jana, Debanjan;
Maikap, Siddheswar;
Prakash, Amit;
Chen, Yi-Yan;
Chiu, Hsien-Chin;
Yang, Jer-Ren

Publication type:

Article

Time-dependent pH sensing phenomena using CdSe/ZnS quantum dots in EIS structure.

Published in:

Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-179

By:

Kumar, Pankaj;
Maikap, Siddheswar;
Prakash, Amit;
Tien, Ta-Chang

Publication type:

Article

Self-compliance RRAM characteristics using a novel W/TaO/TiN structure.

Published in:

Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-292

By:

Maikap, Siddheswar;
Jana, Debanjan;
Dutta, Mrinmoy;
Prakash, Amit

Publication type:

Article

Copper pillar and memory characteristics using AlO switching material for 3D architecture.

Published in:

Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-366

By:

Maikap, Siddheswar;
Panja, Rajeswar;
Jana, Debanjan

Publication type:

Article

Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration.

Published in:

Nanoscale Research Letters, 2013, n. 5, p. 1, doi. 10.1186/1556-276X-8-220

By:

Prakash, Amit;
Maikap, Siddheswar;
Rahaman, Sheikh Ziaur;
Majumdar, Sandip;
Manna, Santanu;
Ray, Samit K.

Publication type:

Article

Dopamine-Sensing Characteristics and Mechanism by Using N 2 /O 2 Annealing in Pt/Ti/n-Si Structure.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 24, p. 3146, doi. 10.3390/electronics10243146

By:

Chen, Yi-Pin;
Roy, Anisha;
Wu, Ping-Hsuan;
Huang, Shih-Yin;
Maikap, Siddheswar

Publication type:

Article

Switching Characteristics and Mechanism Using Al2O3 Interfacial Layer in Al/Cu/GdOx/Al2O3/TiN Memristor.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 9, p. 1466, doi. 10.3390/electronics9091466

By:

Chiu, Chiao-Fan;
Ginnaram, Sreekanth;
Senapati, Asim;
Chen, Yi-Pin;
Maikap, Siddheswar

Publication type:

Article

Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 7, p. 1106, doi. 10.3390/electronics9071106

By:

Senapati, Asim;
Roy, Sourav;
Lin, Yu-Feng;
Dutta, Mrinmoy;
Maikap, Siddheswar

Publication type:

Article

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000209

By:

Maikap, Siddheswar;
Banerjee, Writam

Publication type:

Article

Controlling Conductive Filament and Tributyrin Sensing Using an Optimized Porous Iridium Interfacial Layer in Cu/Ir/TiNxOy/TiN.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800288

By:

Dutta, Mrinmoy;
Maikap, Siddheswar;
Qiu, Jiantai Timothy

Publication type:

Article

Low Voltage High Polarization by Optimizing Scavenged WNx Interfacial Capping Layer at the Ru/HfxZr1‐xO2 Interface and Evidence of Fatigue Mechanism.

Published in:

Advanced Materials Interfaces, 2024, v. 11, n. 23, p. 1, doi. 10.1002/admi.202400185

By:

Aich, Abhijit;
Senapati, Asim;
Lou, Zhao‐Feng;
Chen, Yi‐Pin;
Huang, Shih‐Yin;
Maikap, Siddheswar;
Lee, Min‐Hung;
Liu, Chee Wee

Publication type:

Article

Effects of W/Ir Top Electrode on Resistive Switching and Dopamine Sensing by Using Optimized TaO x-Based Memory Platform.

Published in:

Advanced Materials Interfaces, 2017, v. 4, n. 24, p. n/a, doi. 10.1002/admi.201700959

By:

Samanta, Subhranu;
Maikap, Siddheswar;
Roy, Anisha;
Jana, Surajit;
Qiu, Jian‐Tai

Publication type:

Article

Works by Maikap, Siddheswar

Analysis of weakly bonded oxygen in HfO<sub>2</sub>/SiO<sub>2</sub>/Si stacks by using HRBS and ARXPS.

Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO/TiO/TiN Structure.

Detection of pH and Enzyme-Free HO Sensing Mechanism by Using GdO Membrane in Electrolyte-Insulator-Semiconductor Structure.

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO/WO/W Structure.

Resistive and New Optical Switching Memory Characteristics Using Thermally Grown GeSe Film in Cu/GeSe/W Structure.

Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrO/GdO/W cross-point memories.

Time-dependent pH sensing phenomena using CdSe/ZnS quantum dots in EIS structure.

Self-compliance RRAM characteristics using a novel W/TaO/TiN structure.

Copper pillar and memory characteristics using AlO switching material for 3D architecture.

Resistive switching memory characteristics of Ge/GeO<sub>x</sub> nanowires and evidence of oxygen ion migration.

Dopamine-Sensing Characteristics and Mechanism by Using N 2 /O 2 Annealing in Pt/Ti/n-Si Structure.

Switching Characteristics and Mechanism Using Al2O3 Interfacial Layer in Al/Cu/GdOx/Al2O3/TiN Memristor.

Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM.

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices.

Controlling Conductive Filament and Tributyrin Sensing Using an Optimized Porous Iridium Interfacial Layer in Cu/Ir/TiN<sub>x</sub>O<sub>y</sub>/TiN.

Low Voltage High Polarization by Optimizing Scavenged WN<sub>x</sub> Interfacial Capping Layer at the Ru/Hf<sub>x</sub>Zr<sub>1‐x</sub>O<sub>2</sub> Interface and Evidence of Fatigue Mechanism.

Effects of W/Ir Top Electrode on Resistive Switching and Dopamine Sensing by Using Optimized TaO <sub>x</sub>-Based Memory Platform.