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Cyclocondensation of N-aryl-3-oxobutanethioamides with 2-aminoimidazole and 2-aminobenzimidazole.
- Published in:
- Russian Journal of Organic Chemistry, 2008, v. 44, n. 8, p. 1200, doi. 10.1134/S1070428008080162
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- Article
Quantum Coherence and the Kondo Effect in the 2D Electron Gas of Magnetically Undoped AlGaN/GaN High-Electron-Mobility Transistor Heterostructures.
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- Semiconductors, 2020, v. 54, n. 9, p. 1150, doi. 10.1134/S1063782620090067
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- Article
Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal.
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- Semiconductors, 2018, v. 52, n. 6, p. 776, doi. 10.1134/S1063782618060131
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- Article
Antiviral activity of 1,2,4-triazole derivatives (microreview).
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- Chemistry of Heterocyclic Compounds, 2021, v. 57, n. 4, p. 420, doi. 10.1007/s10593-021-02919-1
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- Article
Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure.
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- Technical Physics, 2017, v. 62, n. 8, p. 1288, doi. 10.1134/S1063784217080035
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- Article
Fluorescence Properties of Thiacarbocyanine Dyes at Low Temperatures.
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- Theoretical & Experimental Chemistry, 2003, v. 39, n. 4, p. 230, doi. 10.1023/A:1025717228251
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- Article
Substrates with Diamond Heat Sink for Epitaxial GaN Growth.
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- Technical Physics Letters, 2021, v. 47, n. 5, p. 353, doi. 10.1134/S1063785021040118
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- Article
Studying the Characteristics of Transistors Based on Gallium Nitride Heterostructures Grown by Ammonia Molecular Beam Epitaxy on Sapphire and Silicon Substrates.
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- Technical Physics Letters, 2019, v. 45, n. 2, p. 173, doi. 10.1134/S1063785019020238
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- Article
Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions.
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- Technical Physics Letters, 2014, v. 40, n. 6, p. 488, doi. 10.1134/S1063785014060091
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- Article
Enzymatic synthesis of electroconductive biocomposites based on DNA and optically active polyaniline.
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- Applied Biochemistry & Microbiology, 2012, v. 48, n. 2, p. 145, doi. 10.1134/S0003683812020135
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- Article
k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures.
- Published in:
- Nature Communications, 2018, v. 9, p. 1, doi. 10.1038/s41467-018-04354-x
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- Article