Works by Mahata, Chandreswar

Results: 31

Density functional theory insight into metal ions and vacancies for improved performance in storage devices.

Published in:

International Journal of Energy Research, 2021, v. 45, n. 7, p. 10882, doi. 10.1002/er.6572

By:

Resheed, Umbreen;
Alsuwian, Turki;
Imran, Muhammad;
Algadi, Hassan;
Khera, Ejaz Ahmad;
Khalil, R. M. Arif;
Mahata, Chandreswar;
Hussain, Fayyaz

Publication type:

Article

Textile-Based Electronic Components for Energy Applications: Principles, Problems, and Perspective.

Published in:

Nanomaterials (2079-4991), 2015, v. 5, n. 3, p. 1493, doi. 10.3390/nano5031493

By:

Kaushik, Vishakha;
Jaehong Lee;
Juree Hong;
Seulah Lee;
Sanggeun Lee;
Jungmok Seo;
Mahata, Chandreswar;
Taeyoon Lee

Publication type:

Article

Functionalized Graphene-Incorporated Cupric Oxide Charge-Transport Layer for Enhanced Photoelectrochemical Performance and Hydrogen Evolution.

Published in:

Catalysts (2073-4344), 2023, v. 13, n. 4, p. 785, doi. 10.3390/catal13040785

By:

Krishna, Ambati Mounika Sai;
Ramasubramanian, Brindha;
Haseena, Sheik;
Bamola, Priyanka;
Sharma, Himani;
Mahata, Chandreswar;
Chroneos, Alexander;
Krishnamurthy, Satheesh;
Ravva, Mahesh Kumar;
Chandu, Basavaiah;
Lim, Yee-Fun;
Kumar, Avishek;
Ramakrishna, Seeram;
Biring, Sajal;
Chakrabortty, Sabyasachi;
Dalapati, Goutam Kumar

Publication type:

Article

p-i-n Structured Semitransparent Perovskite Solar Cells with Solution-Processed Electron Transport Layer.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 10, p. 5732, doi. 10.1007/s11664-021-09104-2

By:

Guchhait, Asim;
Dalapati, Goutam Kumar;
Sonar, Prashant;
Gopalan, Saianand;
Suhaimi, Firdaus Bin;
Das, Tapas;
Dutt, V. G. Vasavi;
Mishra, Nimai;
Mahata, Chandreswar;
Kumar, Avishek;
Ramakrishna, Seeram

Publication type:

Article

Nano-structured CuO on Silicon Using a Chemical Bath Deposition Process and Sputter Seed Layer.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 4, p. 1779, doi. 10.1007/s11664-021-08772-4

By:

Bandaru, Shamili;
Mahata, Chandreswar;
Chakrabortty, Sabyasachi;
Ghosh, Siddhartha;
Algadi, Hassan;
Ramakrishna, Seeram;
Dalapati, Goutam Kumar

Publication type:

Article

Improvement of p-CuO/n-Si Heterojunction Solar Cell Performance Through Nitrogen Plasma Treatment.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 4, p. 1720, doi. 10.1007/s11664-020-08593-x

By:

Abzal, Shaik Md.;
Dash, Jatis Kumar;
Mahata, Chandreswar;
Guchhait, Asim;
Kumar, Avishek;
Ramakrishna, Seeram;
Dalapati, Goutam Kumar

Publication type:

Article

Improvement of Photoresponse Properties of Self-Powered ITO/InP Schottky Junction Photodetector by Interfacial ZnO Passivation.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 4, p. 1800, doi. 10.1007/s11664-020-08565-1

By:

Algadi, Hassan;
Mahata, Chandreswar;
Kim, Sungjun;
Dalapati, Goutam Kumar

Publication type:

Article

First-Principles Simulation of Structural, Electronic and Optical Properties of Cerium Trisulfide (Ce2S3) Compound.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 4, p. 1637, doi. 10.1007/s11664-020-08478-z

By:

Arif Khalil, R. M.;
Hussain, Muhammad Iqbal;
Imran, Muhammad;
Hussain, Fayyaz;
Saeed, Nyla;
Murtaza, G.;
Rana, Anwar Manzoor;
Mahata, Chandreswar

Publication type:

Article

Charge trapping characteristics of sputter-AlOx/ALD Al2O3/Epitaxial-GaAs-based non-volatile memory.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 4, p. 4157, doi. 10.1007/s10854-020-05157-x

By:

Mahata, Chandreswar;
Ghosh, Siddhartha;
Chakraborty, Sandipan;
Patro, Laxmi Narayana;
Tripathi, Anjana;
Thapa, Ranjit;
Ramakrishna, Seeram;
Kim, Sungjun;
Dalapati, Goutam Kumar

Publication type:

Article

SnO 2 -Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing.

Published in:

Nanomaterials (2079-4991), 2023, v. 13, n. 18, p. 2603, doi. 10.3390/nano13182603

By:

Ismail, Muhammad;
Mahata, Chandreswar;
Kang, Myounggon;
Kim, Sungjun

Publication type:

Article

Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device.

Published in:

Nanomaterials (2079-4991), 2021, v. 11, n. 2, p. 315, doi. 10.3390/nano11020315

By:

Khan, Sobia Ali;
Lee, Geun Ho;
Mahata, Chandreswar;
Ismail, Muhammad;
Kim, Hyungjin;
Kim, Sungjun;
García Ruiz, Francisco Javier

Publication type:

Article

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO 2 /Al 2 O 3 /HfO 2 Based Memristor on ITO Electrode.

Published in:

Nanomaterials (2079-4991), 2020, v. 10, n. 10, p. 2069, doi. 10.3390/nano10102069

By:

Mahata, Chandreswar;
Kang, Myounggon;
Kim, Sungjun

Publication type:

Article

Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate.

Published in:

Nanomaterials (2079-4991), 2020, v. 10, n. 5, p. 994, doi. 10.3390/nano10050994

By:

Rahmani, Mehr Khalid;
Kim, Min-Hwi;
Hussain, Fayyaz;
Abbas, Yawar;
Ismail, Muhammad;
Hong, Kyungho;
Mahata, Chandreswar;
Choi, Changhwan;
Park, Byung-Gook;
Kim, Sungjun

Publication type:

Article

Stem Cell Spheroids: Switchable Water-Adhesive, Superhydrophobic Palladium-Layered Silicon Nanowires Potentiate the Angiogenic Efficacy of Human Stem Cell Spheroids (Adv. Mater. 41/2014).

Published in:

Advanced Materials, 2014, v. 26, n. 41, p. 6985, doi. 10.1002/adma.201470280

By:

Seo, Jungmok;
Lee, Jung Seung;
Lee, Kihong;
Kim, Dayeong;
Yang, Kisuk;
Shin, Sera;
Mahata, Chandreswar;
Jung, Hwae Bong;
Lee, Wooyoung;
Cho, Seung-Woo;
Lee, Taeyoon

Publication type:

Article

Switchable Water-Adhesive, Superhydrophobic Palladium-Layered Silicon Nanowires Potentiate the Angiogenic Efficacy of Human Stem Cell Spheroids.

Published in:

Advanced Materials, 2014, v. 26, n. 41, p. 7043, doi. 10.1002/adma.201402273

By:

Seo, Jungmok;
Lee, Jung Seung;
Lee, Kihong;
Kim, Dayeong;
Yang, Kisuk;
Shin, Sera;
Mahata, Chandreswar;
Jung, Hwae Bong;
Lee, Wooyoung;
Cho, Seung-Woo;
Lee, Taeyoon

Publication type:

Article

Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System.

Published in:

Advanced Materials Interfaces, 2023, v. 10, n. 21, p. 1, doi. 10.1002/admi.202300290

By:

Yang, Seyeong;
Kim, Taegyun;
Kim, Sunghun;
Kim, Sungjoon;
Kim, Tae‐Hyeon;
Ismail, Muhammad;
Mahata, Chandreswar;
Kim, Sungjun;
Cho, Seongjae

Publication type:

Article

Enhanced Photoresponsivity of All-Inorganic (CsPbBr3) Perovskite Nanosheets Photodetector with Carbon Nanodots (CDs).

Published in:

Electronics (2079-9292), 2019, v. 8, n. 6, p. 678, doi. 10.3390/electronics8060678

By:

Algadi, Hassan;
Mahata, Chandreswar;
Woo, Janghoon;
Lee, Minkyu;
Kim, Minsu;
Lee, Taeyoon

Publication type:

Article

Alloyed High-k-Based Resistive Switching Memory in Contact Hole Structures.

Published in:

Coatings (2079-6412), 2021, v. 11, n. 4, p. 451, doi. 10.3390/coatings11040451

By:

Kim, Byeongjeong;
Mahata, Chandreswar;
Ryu, Hojeong;
Ismail, Muhammad;
Yang, Byung-Do;
Kim, Sungjun

Publication type:

Article

Efficient Plastic Recycling and Remolding Circular Economy Using the Technology of Trust–Blockchain.

Published in:

Sustainability (2071-1050), 2021, v. 13, n. 16, p. 9142, doi. 10.3390/su13169142

By:

Khadke, Swikriti;
Gupta, Pragya;
Rachakunta, Shanmukh;
Mahata, Chandreswar;
Dawn, Suma;
Sharma, Mohit;
Verma, Deepak;
Pradhan, Aniruddha;
Krishna, Ambati Mounika Sai;
Ramakrishna, Seeram;
Chakrabortty, Sabyasachi;
Saianand, Gopalan;
Sonar, Prashant;
Biring, Sajal;
Dash, Jatindra Kumar;
Dalapati, Goutam Kumar

Publication type:

Article

Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering.

Published in:

Nanoscale Research Letters, 2022, v. 17, n. 1, p. 1, doi. 10.1186/s11671-022-03699-z

By:

Ismail, Muhammad;
Mahata, Chandreswar;
Kang, Myounggon;
Kim, Sungjun

Publication type:

Article

Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System.

Published in:

Nanoscale Research Letters, 2022, v. 17, n. 1, p. 1, doi. 10.1186/s11671-022-03696-2

By:

Mahata, Chandreswar;
Ismail, Muhammad;
Kang, Myounggon;
Kim, Sungjun

Publication type:

Article

Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applications.

Published in:

Nano Convergence, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40580-023-00380-8

By:

Ismail, Muhammad;
Rasheed, Maria;
Mahata, Chandreswar;
Kang, Myounggon;
Kim, Sungjun

Publication type:

Article

Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers.

Published in:

Micromachines, 2022, v. 13, n. 9, p. 1498, doi. 10.3390/mi13091498

By:

Khan, Sobia Ali;
Hussain, Fayyaz;
Chung, Daewon;
Rahmani, Mehr Khalid;
Ismail, Muhammd;
Mahata, Chandreswar;
Abbas, Yawar;
Abbas, Haider;
Choi, Changhwan;
Mikhaylov, Alexey N.;
Shchanikov, Sergey A.;
Yang, Byung-Do;
Kim, Sungjun

Publication type:

Article

Analog Memory and Synaptic Plasticity in an InGaZnO-Based Memristor by Modifying Intrinsic Oxygen Vacancies.

Published in:

Materials (1996-1944), 2023, v. 16, n. 24, p. 7510, doi. 10.3390/ma16247510

By:

Mahata, Chandreswar;
So, Hyojin;
Kim, Soomin;
Kim, Sungjun;
Cho, Seongjae

Publication type:

Article

Forming-Free Tunable Analog Switching in WO x /TaO x Heterojunction for Emulating Electronic Synapses.

Published in:

Materials (1996-1944), 2022, v. 15, n. 24, p. 8858, doi. 10.3390/ma15248858

By:

Mahata, Chandreswar;
Pyo, Juyeong;
Jeon, Beomki;
Ismail, Muhammad;
Kang, Myounggon;
Kim, Sungjun

Publication type:

Article

Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al 2 O 3 Bilayer Structure.

Published in:

Materials (1996-1944), 2022, v. 15, n. 19, p. 6663, doi. 10.3390/ma15196663

By:

Mahata, Chandreswar;
Park, Jongmin;
Ismail, Muhammad;
Kim, Dae Hwan;
Kim, Sungjun

Publication type:

Article

Metaplasticity and Reservoir Computing in Bio‐Realistic Artificial Synapses with Embedded Localized Au‐Nanoparticle‐Based Memristors.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 10, p. 1, doi. 10.1002/adfm.202416862

By:

Mahata, Chandreswar;
Kim, Gimun;
So, Hyojin;
Ismail, Muhammad;
Hsu, Chih‐Chieh;
Kim, Sungjoon;
Kim, Sungjun

Publication type:

Article

Synaptic Characteristics and Vector‐Matrix Multiplication Operation in Highly Uniform and Cost‐Effective Four‐Layer Vertical RRAM Array.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 8, p. 1, doi. 10.1002/adfm.202310193

By:

Kim, Jihyung;
Lee, Subaek;
Kim, Sungjoon;
Yang, Seyoung;
Lee, Jung‐Kyu;
Kim, Tae‐Hyeon;
Ismail, Muhammad;
Mahata, Chandreswar;
Kim, Yoon;
Choi, Woo Young;
Kim, Sungjun

Publication type:

Article

Synaptic Properties and Short‐Term Memory Dynamics of TiO2/WOx Heterojunction Memristor for Reservoir Computing.

Published in:

Advanced Materials Technologies, 2024, v. 9, n. 5, p. 1, doi. 10.1002/admt.202301390

By:

So, Hyojin;
Lee, Jungwoo;
Mahata, Chandreswar;
Kim, Sangwan;
Kim, Sungjun

Publication type:

Article

Long‐ and Short‐Term Memory Characteristics Controlled by Electrical and Optical Stimulations in InZnO‐Based Synaptic Device for Reservoir Computing.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300911

By:

Park, Hyogeun;
Ju, Dongyeol;
Mahata, Chandreswar;
Emelyanov, Andrey;
Koo, Minsuk;
Kim, Sungjun

Publication type:

Article

Electrical characteristics of Hf O2 films on In P with different atomic-layer-deposition temperatures.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 7, p. 1381, doi. 10.1002/pssa.201228759

By:

An, Chee‐Hong;
Mahata, Chandreswar;
Byun, Young‐Chul;
Lee, Myung Soo;
Kang, Yu Seon;
Cho, Mann‐Ho;
Kim, Hyoungsub

Publication type:

Article

Works by Mahata, Chandreswar

Density functional theory insight into metal ions and vacancies for improved performance in storage devices.

Textile-Based Electronic Components for Energy Applications: Principles, Problems, and Perspective.

Functionalized Graphene-Incorporated Cupric Oxide Charge-Transport Layer for Enhanced Photoelectrochemical Performance and Hydrogen Evolution.

p-i-n Structured Semitransparent Perovskite Solar Cells with Solution-Processed Electron Transport Layer.

Nano-structured CuO on Silicon Using a Chemical Bath Deposition Process and Sputter Seed Layer.

Improvement of p-CuO/n-Si Heterojunction Solar Cell Performance Through Nitrogen Plasma Treatment.

Improvement of Photoresponse Properties of Self-Powered ITO/InP Schottky Junction Photodetector by Interfacial ZnO Passivation.

First-Principles Simulation of Structural, Electronic and Optical Properties of Cerium Trisulfide (Ce2S3) Compound.

Charge trapping characteristics of sputter-AlOx/ALD Al2O3/Epitaxial-GaAs-based non-volatile memory.

SnO 2 -Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing.

Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device.

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO 2 /Al 2 O 3 /HfO 2 Based Memristor on ITO Electrode.

Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate.

Stem Cell Spheroids: Switchable Water-Adhesive, Superhydrophobic Palladium-Layered Silicon Nanowires Potentiate the Angiogenic Efficacy of Human Stem Cell Spheroids (Adv. Mater. 41/2014).

Switchable Water-Adhesive, Superhydrophobic Palladium-Layered Silicon Nanowires Potentiate the Angiogenic Efficacy of Human Stem Cell Spheroids.

Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System.

Enhanced Photoresponsivity of All-Inorganic (CsPbBr3) Perovskite Nanosheets Photodetector with Carbon Nanodots (CDs).

Alloyed High-k-Based Resistive Switching Memory in Contact Hole Structures.

Efficient Plastic Recycling and Remolding Circular Economy Using the Technology of Trust–Blockchain.

Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering.

Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System.

Mimicking biological synapses with a-HfSiO<sub>x</sub>-based memristor: implications for artificial intelligence and memory applications.

Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers.

Analog Memory and Synaptic Plasticity in an InGaZnO-Based Memristor by Modifying Intrinsic Oxygen Vacancies.

Forming-Free Tunable Analog Switching in WO x /TaO x Heterojunction for Emulating Electronic Synapses.

Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al 2 O 3 Bilayer Structure.

Metaplasticity and Reservoir Computing in Bio‐Realistic Artificial Synapses with Embedded Localized Au‐Nanoparticle‐Based Memristors.

Synaptic Characteristics and Vector‐Matrix Multiplication Operation in Highly Uniform and Cost‐Effective Four‐Layer Vertical RRAM Array.

Synaptic Properties and Short‐Term Memory Dynamics of TiO<sub>2</sub>/WO<sub>x</sub> Heterojunction Memristor for Reservoir Computing.

Long‐ and Short‐Term Memory Characteristics Controlled by Electrical and Optical Stimulations in InZnO‐Based Synaptic Device for Reservoir Computing.

Electrical characteristics of Hf O<sub>2</sub> films on In P with different atomic-layer-deposition temperatures.