Works matching AU Ma, Xiaohua


Results: 220
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    Comparative Study of Characteristics and Interface States with and without Post‐Gate‐Annealing Treatment for AlGaN/GaN‐Recessed Metal–Insulator–Semiconductor High Electron Mobility Transistors Using HfO<sub>2</sub> Gate Insulator on Si Substrates

    Published in:
    Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 6, p. 1, doi. 10.1002/pssa.201900981
    By:
    • Zhao, Yaopeng;
    • Wang, Chong;
    • Zheng, Xuefeng;
    • Ma, Xiaohua;
    • He, Yunlong;
    • Liu, Kai;
    • Li, Ang;
    • Peng, Yue;
    • Zhang, Chunfu;
    • Hao, Yue
    Publication type:
    Article
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