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Technology of Blast-Furnace Smelting of Iron using Pulverized Coal at the NLMK.
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- Metallurgist, 2020, v. 64, n. 5/6, p. 381, doi. 10.1007/s11015-020-01006-8
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Third International Conference "Physics for Life Sciences" Study of Dentin Structural Features by Computed Microtomography and Transmission Electron Microscopy.
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- Technical Physics, 2020, v. 65, n. 9, p. 1391, doi. 10.1134/S1063784220090054
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- Article
Advances in the treatment of combat trauma to the extremities: photodynamic therapy and methods of plastic wound closure.
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- Ukrainian Journal of Clinical Surgery, 2023, v. 90, n. 4, p. 25, doi. 10.26779/2786-832X.2023.4.25
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- Article
Morphology and Spatial Distribution of Ordered Domains in GaInP/GaAs(001) According to Transmission Electron Microscopy.
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- Crystallography Reports, 2024, v. 69, n. 4, p. 536, doi. 10.1134/S1063774524601394
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- Article
Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates.
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- Crystals (2073-4352), 2017, v. 7, n. 6, p. 163, doi. 10.3390/cryst7060163
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- Article
Positive temperature coefficient of resistance in the lead-containing ceramic barium titanate.
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- Technical Physics, 1997, v. 42, n. 9, p. 1097, doi. 10.1134/1.1258783
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- Article
Dislocation Structure of AlN/SiC Templates Grown by Sublimation.
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- Semiconductors, 2024, v. 58, n. 4, p. 323, doi. 10.1134/S1063782624040079
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- Article
ASPECTS OF THE DEVELOPMENT OF THE PROGRAM OF PALLIATIVE ASSISTANCE FOR CHILDREN OF THE KHARKIV REGION THROUTH THE CHALLENGES OF THE MILITARY CONFLICT.
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- Neonatology Surgery & Perinatal Medicine, 2023, v. 8, n. 3, p. 5, doi. 10.24061/2413-4260.XIII.3.49.2023.1
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- Article
Microstructure of Epitaxial GaN Layers Synthesized on Nanoprofiled Si(001) Substrates.
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- Crystallography Reports, 2021, v. 66, n. 4, p. 682, doi. 10.1134/S1063774521040155
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- Article
Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 10, p. n/a, doi. 10.1002/pssa.201700190
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- Article
EFFECT OF DEPRESSANTS AND BASE METAL ON MICROSTRUCTURE OF BRAZED SEAMS IN JOINTS OF Ni3Al-BASED ALLOYS WITH Inconel 718 ALLOY.
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- Paton Welding Journal, 2015, n. 12, p. 8, doi. 10.15407/tpwj2015.12.02
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- Article
Defect Structure of α-Ga<sub>2</sub>O<sub>3</sub> Film Grown on a m-face Sapphire Substrate, According to Transmission Electron Microscopy Investigation.
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- Technical Physics Letters, 2023, v. 49, p. S90, doi. 10.1134/S1063785023900455
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- Article
The Effect of AlN Buffer Layer Morphology on the Structural Quality of a Semipolar GaN Layer Grown on a Si(001) Substrate, According to Transmission Electron Microscopy Data.
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- Technical Physics Letters, 2023, v. 49, p. S34, doi. 10.1134/S1063785023900303
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- Article
A TEM Study of AlN–AlGaN–GaN Multilayer Buffer Structures on Silicon Substrates.
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- Technical Physics Letters, 2020, v. 46, n. 10, p. 991, doi. 10.1134/S1063785020100119
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- Article
An Increase of Threading Dislocations Filtering Efficiency in Al2O3 Templates with Faceted Surface Morphology During a Growth by Molecular Beam Epitaxy.
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- Technical Physics Letters, 2020, v. 46, n. 6, p. 543, doi. 10.1134/S1063785020060097
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- Article
Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy.
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- Technical Physics Letters, 2020, v. 46, n. 4, p. 389, doi. 10.1134/S1063785020040240
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- Article
Asymmetry of the Defect Structure of Semipolar GaN Grown on Si(001).
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- Technical Physics Letters, 2018, v. 44, n. 10, p. 926, doi. 10.1134/S1063785018100267
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- Article
Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage.
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- Technical Physics Letters, 2013, v. 39, n. 11, p. 994, doi. 10.1134/S1063785013110230
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- Article
COMMON FOOD ADDITIVE E407a AFFECTS BCL-2 EXPRESSION IN LYMPHOCYTES IN VITRO.
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- Studia Universitatis Vasile Goldis Seria Stiintele Vietii (Life Sciences Series), 2019, v. 29, n. 4, p. 169
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- Article