Works by Lysenko, V. S.

Results: 31

Photovoltaic properties and photoconductivity in multilayer Ge/Si heterostructures with Ge nanoislands.
Published in:
Journal of Materials Science, 2011, v. 46, n. 17, p. 5737, doi. 10.1007/s10853-011-5528-2
By:
- Kondratenko, S. V.;
- Vakulenko, O. V.;
- Kozyrev, Yu. N.;
- Rubezhanska, M. Yu.;
- Naumovets, A. G.;
- Nikolenko, A. S.;
- Lysenko, V. S.;
- Strelchuk, V. V.;
- Teichert, C.
Publication type:
Article
Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes.
Published in:
Applied Physics B: Lasers & Optics, 2007, v. 87, n. 1, p. 129, doi. 10.1007/s00340-006-2534-1
By:
- Nazarov, A. N.;
- Osiyuk, I. N.;
- Sun, J. M.;
- Yankov, R. A.;
- Skorupa, W.;
- Tyagulskii, I. P.;
- Lysenko, V. S.;
- Prucnal, S.;
- Gebel, T.;
- Rebohle, L.
Publication type:
Article
Sulfur-Reducing Additives Based on Aluminosilicates Al-SBA-15 and Al-SBA-16 for Cracking catalysts.
Published in:
Chemistry & Technology of Fuels & Oils, 2018, v. 54, n. 1, p. 15, doi. 10.1007/s10553-018-0892-0
By:
- Glotov, A. P.;
- Levshakov, N. S.;
- Artemova, M. I.;
- Smirnova, E. M.;
- Vutolkina, A.V.;
- Lysenko, S. V.
Publication type:
Article
Mesoporous aluminosilicates as components of gas oil cracking and higher-alkane hydroisomerization catalysts.
Published in:
Petroleum Chemistry, 2011, v. 51, n. 3, p. 151, doi. 10.1134/S0965544111030091
By:
- Lysenko, S. V.;
- Kryukov, I. O.;
- Sarkisov, O. A.;
- Abikenova, A. B.;
- Baranova, S. V.;
- Ostroumova, V. A.;
- Kardashev, S. V.;
- Kulikov, A. B.;
- Karakhanov, E. A.
Publication type:
Article
FORMATION AND STABILITY OF GOLD NANOPARTICLES IN COLLOIDS PREPARED BY CITRATE METHOD.
Published in:
Chemistry, Physics & Technology of Surface / Khimiya, Fizyka ta Tekhnologiya Poverhni, 2023, v. 14, n. 3, p. 310, doi. 10.15407/hftp14.03.310
By:
- Vityuk, N. V.;
- Eremenko, A. M.;
- Rusinchuk, N. М.;
- Lozovski, V. Z.;
- Lokshyn, M. М.;
- Lysenko, V. S.;
- Mukha, Iu. P.
Publication type:
Article
Oxidation of Dibenzothiophene with the Subsequent Bioconversion of Sulfone.
Published in:
Theoretical Foundations of Chemical Engineering, 2021, v. 55, n. 4, p. 778, doi. 10.1134/S0040579521040035
By:
- Akopyan, A. V.;
- Polikarpova, P. D.;
- Anisimov, A. V.;
- Lysenko, S. V.;
- Maslova, O. V.;
- Sen'ko, O. V.;
- Efremenko, E. N.
Publication type:
Article
A Review of Riverine Fluxes of Hexachlorocyclohexane and DDT to the Azov and Black Seas from the Former USSR and Russian Federation.
Published in:
Journal of Environmental Science & Health. Part A. Toxic/Hazardous Substances & Environmental Engineering, 2003, v. 38, n. 5, p. 753, doi. 10.1081/ESE-120018589
By:
- Zhulidov, Alexander V.;
- Robarts, Richard D.;
- Headley, John V.;
- Korotova, L. G.;
- Zhulidov, Daniel A.;
- Zhulidova, Olga V.;
- Chernousov, S. Ya.;
- Khlobystov, V. V.;
- Pavlov, Dima F.;
- Lysenko, V. S.;
- Korneev, V. V.
Publication type:
Article
Microprismatic plane-focusing Fresnel lenses for light concentration in solar photovoltaic modules.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 2, p. 188, doi. 10.15407/spqeo26.02.188
By:
- Antonov, E. E.;
- Kondratenko, S. V.;
- Lysenko, V. S.;
- Petrov, V. V.;
- Zenin, V. N.
Publication type:
Article
Nanophysics in modern medicine.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 2, p. 185, doi. 10.15407/spqeo25.02.185
By:
- Lozovski, V. Z.;
- Lysenko, V. S.;
- Rusinchuk, N. M.
Publication type:
Article
The advancement of silicon-on-insulator (SOI) devices and their basic properties.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 227, doi. 10.15407/spqeo23.03.227
By:
- Rudenko, T. E.;
- Nazarov, A. N.;
- Lysenko, V. S.
Publication type:
Article
Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 259, doi. 10.15407/spqeo20.02.259
By:
- Iliash, S. A.;
- Hyrka, Yu. V.;
- Kondratenko, S. V.;
- Lysenko, V. S.;
- Kozyrev, Yu. M.;
- Lendel, V. V.
Publication type:
Article
Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 259, doi. 10.15407/spqeo20.02.259
By:
- Iliash, S. A.;
- Hyrka, Yu. V.;
- Kondratenko, S. V.;
- Lysenko, V. S.;
- Kozyrev, Yu. M.;
- Lendel, V. V.
Publication type:
Article
Analysis of multichannel optical rotary connectors based on the compensation operating principle with mirror and prismatic optical compensators (Part 1).
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 1, p. 1, doi. 10.15407/spqeo20.01.001
By:
- Shapar, V. M.;
- Lysenko, V. S.;
- Savchuk, A. V.
Publication type:
Article
Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si1-xCx:H films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 63
By:
- Vasin, A. V.;
- Ishikawa, Y.;
- Rusavsky, A. V.;
- Nazarov, A. N.;
- Konchitz, A. A.;
- Lysenko, V. S.
Publication type:
Article
Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 331
By:
- Melnichuk, Ye. Ye.;
- Hyrka, Yu. V.;
- Kondratenko, S. V.;
- Kozyrev, Yu. N.;
- Lysenko, V. S.
Publication type:
Article
Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 34
By:
- Tiagulskyi, S. I.;
- Nazarov, A. N.;
- Gordienko, S. O.;
- Vasin, A. V.;
- Rusavsky, A. V.;
- Nazarova, T. M.;
- Gomeniuk, Yu. V.;
- Rudko, G. V.;
- Lysenko, V. S.;
- Rebohle, L.;
- Voelskow, M.;
- Skorupa, W.;
- Koshka, Y.
Publication type:
Article
Graphene layers fabricated from the Ni/a-SiC bilayer precursor.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 322
By:
- Nazarov, A. N.;
- Vasin, A. V.;
- Gordienko, S. O.;
- Lytvyn, P. M.;
- Strelchuk, V. V.;
- Nikolenko, A. S.;
- Stubrov, Yu. Yu.;
- Hirov, A. S.;
- Rusavsky, A. V.;
- Popov, V. P.;
- Lysenko, V. S.
Publication type:
Article
Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 98, doi. 10.15407/spqeo11.04.319
By:
- Nazarov, A. N.;
- Osiyuk, I. N.;
- Tiagulskyi, S. I.;
- Lysenko, V. S.;
- Tyagulskyy, I. P.;
- Torbin, V. N.;
- Omelchuk, V. V.;
- Nazarova, T. M.;
- Rebohle, L.;
- Skorupa, W.
Publication type:
Article
Novel hysteresis effect in ultrathin epitaxial Gd2O3 high-k dielectric.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 324, doi. 10.15407/spqeo11.04.324
By:
- Nazarov, A. N.;
- Gomeniuk, Y. V.;
- Gomeniuk, Y. Y.;
- Lysenko, V. S.;
- Gottlob, H. D. B.;
- Schmidt, M.;
- Lemme, M. C.;
- Czernohorsky, M.;
- Osten, H. J.
Publication type:
Article
Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 2, p. 101, doi. 10.15407/spqeo11.02.101
By:
- Nazarov, A. N.;
- Lysenko, V. S.;
- Nazarova, T. M.
Publication type:
Article
Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic temperatures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 34, doi. 10.15407/spqeo10.02.034
By:
- Lysenko, V. S.;
- Tyagulsky, I. P.;
- Osiyuk, I. N.;
- Nazarov, A. N.
Publication type:
Article
Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 2, p. 69, doi. 10.15407/spqeo9.02.069
By:
- Houk, Y.;
- Nazarov, A. N.;
- Turchanikov, V. I.;
- Lysenko, V. S.;
- Andriaensen, S.;
- Flandre, D.
Publication type:
Article
Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 9, doi. 10.15407/spqeo9.01.009
By:
- Indutnyy, I. Z.;
- Lysenko, V. S.;
- Maidanchuk, I. Yu.;
- Min’ko, V. I.;
- Nazarov, A. N.;
- Tkachenko, A. S.;
- Shepeliavyi, P. E.;
- Dan’ko, V. A.
Publication type:
Article
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 90, doi. 10.15407/spqeo8.01.090
By:
- Nazarov, A. N.;
- Skorupa, W.;
- Vovk, Ja. N.;
- Osiyuk, I. N.;
- Tkachenko, A. S.;
- Tyagulskii, I. P.;
- Lysenko, V. S.;
- Gebel, T.;
- Rebohle, L.;
- Yankov, R. A.;
- Nazarova, T. M.
Publication type:
Article
Effect of PEDOT:PSS Layer Deposition on Electrical and Photoelectrical Properties of n+-ZnO/n-Si Heterostructure.
Published in:
Journal of Electronic Materials, 2023, v. 52, n. 5, p. 3112, doi. 10.1007/s11664-023-10276-2
By:
- Gomeniuk, Y. V.;
- Gomeniuk, Y. Y.;
- Kondratenko, S. V.;
- Rudenko, T. E.;
- Vasin, A. V.;
- Rusavsky, A. V.;
- Slobodian, O. M.;
- Tyagulskyy, I. P.;
- Kostylyov, V. P.;
- Vlasiuk, V. M.;
- Tiagulskyi, S. I.;
- Yatskiv, R.;
- Lysenko, V. S.;
- Nazarov, A. N.
Publication type:
Article
Kinetics of Structural and Phase Transformations in Thin SiOx Films in the Course of a Rapid Thermal Annealing.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1197, doi. 10.1134/1.2085270
By:
- Dan'ko, V. A.;
- Indutnyı, I. Z.;
- Lysenko, V. S.;
- Maıdanchuk, I. Yu.;
- Min'ko, V. I.;
- Nazarov, A. N.;
- Tkachenko, A. S.;
- Shepelyavyı, P. E.
Publication type:
Article
The Influence of Vacuum Annealing Temperature on the Fundamental Absorption Edge and Structural Relaxation of a-SiC:H Films.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 572, doi. 10.1134/1.1923567
By:
- Vasin, A. V.;
- Rusavsky, A. V.;
- Lysenko, V. S.;
- Nazarov, A. N.;
- Kushnirenko, V. I.;
- Starik, S. P.;
- Stepanov, V. G.
Publication type:
Article
Effect of Erbium on Electronic Traps in PECVD-grown a-Si:H(Er)/c-Si Structures.
Published in:
Semiconductors, 2001, v. 35, n. 6, p. 621, doi. 10.1134/1.1379390
By:
- Lysenko, V. S.;
- Tyagulskiı, I. P.;
- Osiyuk, I. N.;
- Nazarov, A. N.;
- Vovk, Ya. N.;
- Gomenyuk, Yu. V.;
- Terukov, E. I.;
- Kon’kov, O. I.
Publication type:
Article
The nature of white luminescence in SiO2:C layers.
Published in:
Technical Physics Letters, 2009, v. 35, n. 6, p. 559, doi. 10.1134/S1063785009060224
By:
- Vasin, A. V.;
- Kushnirenko, V. I.;
- Lysenko, V. S. L.;
- Nazarov, A. N.;
- Ishikawa, Yukari;
- Salonen, J.
Publication type:
Article
Impedance spectroscopy of single graphene layer at gas adsorption.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 9, p. 1941, doi. 10.1002/pssa.201532101
By:
- Skryshevsky, V. A.;
- Milovanov, Yu. S.;
- Gavrilchenko, I. V.;
- Tiagulskyi, S. I.;
- Rusavsky, A. V.;
- Lysenko, V. S.;
- Nazarov, A. N.
Publication type:
Article
Bimetallic Sulfur-Reducing Additives Based on Al-MCM-41 Structured Aluminosilicate for Cracking Catalysts.
Published in:
Petroleum Chemistry, 2018, v. 58, n. 3, p. 214, doi. 10.1134/S0965544118030088
By:
- Glotov, A. P.;
- Levshakov, N. S.;
- Vutolkina, A. V.;
- Lysenko, S. V.
Publication type:
Article

Works by Lysenko, V. S.

Photovoltaic properties and photoconductivity in multilayer Ge/Si heterostructures with Ge nanoislands.

Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes.

Sulfur-Reducing Additives Based on Aluminosilicates Al-SBA-15 and Al-SBA-16 for Cracking catalysts.

Mesoporous aluminosilicates as components of gas oil cracking and higher-alkane hydroisomerization catalysts.

FORMATION AND STABILITY OF GOLD NANOPARTICLES IN COLLOIDS PREPARED BY CITRATE METHOD.

Oxidation of Dibenzothiophene with the Subsequent Bioconversion of Sulfone.

A Review of Riverine Fluxes of Hexachlorocyclohexane and DDT to the Azov and Black Seas from the Former USSR and Russian Federation.

Microprismatic plane-focusing Fresnel lenses for light concentration in solar photovoltaic modules.

Nanophysics in modern medicine.

The advancement of silicon-on-insulator (SOI) devices and their basic properties.

Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films.

Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films.

Analysis of multichannel optical rotary connectors based on the compensation operating principle with mirror and prismatic optical compensators (Part 1).

Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si<sub>1-x</sub>C<sub>x</sub>:H films.

Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface.

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.

Graphene layers fabricated from the Ni/a-SiC bilayer precursor.

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions.

Novel hysteresis effect in ultrathin epitaxial Gd<sub>2</sub>O<sub>3</sub> high-k dielectric.

Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers.

Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic temperatures.

Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation.

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiO<sub>x</sub> films.

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment.

Effect of PEDOT:PSS Layer Deposition on Electrical and Photoelectrical Properties of n<sup>+</sup>-ZnO/n-Si Heterostructure.

Kinetics of Structural and Phase Transformations in Thin SiO<sub>x</sub> Films in the Course of a Rapid Thermal Annealing.

The Influence of Vacuum Annealing Temperature on the Fundamental Absorption Edge and Structural Relaxation of a-SiC:H Films.

Effect of Erbium on Electronic Traps in PECVD-grown a-Si:H(Er)/c-Si Structures.

The nature of white luminescence in SiO<sub>2</sub>:C layers.

Impedance spectroscopy of single graphene layer at gas adsorption.

Bimetallic Sulfur-Reducing Additives Based on Al-MCM-41 Structured Aluminosilicate for Cracking Catalysts.