Works matching AU Lysenko, V. S.

Results: 31

Oxidation of Dibenzothiophene with the Subsequent Bioconversion of Sulfone.

Published in:

Theoretical Foundations of Chemical Engineering, 2021, v. 55, n. 4, p. 778, doi. 10.1134/S0040579521040035

By:

Akopyan, A. V.;
Polikarpova, P. D.;
Anisimov, A. V.;
Lysenko, S. V.;
Maslova, O. V.;
Sen'ko, O. V.;
Efremenko, E. N.

Publication type:

Article

Sulfur-Reducing Additives Based on Aluminosilicates Al-SBA-15 and Al-SBA-16 for Cracking catalysts.

Published in:

Chemistry & Technology of Fuels & Oils, 2018, v. 54, n. 1, p. 15, doi. 10.1007/s10553-018-0892-0

By:

Glotov, A. P.;
Levshakov, N. S.;
Artemova, M. I.;
Smirnova, E. M.;
Vutolkina, A.V.;
Lysenko, S. V.

Publication type:

Article

Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes.

Published in:

Applied Physics B: Lasers & Optics, 2007, v. 87, n. 1, p. 129, doi. 10.1007/s00340-006-2534-1

By:

Nazarov, A. N.;
Osiyuk, I. N.;
Sun, J. M.;
Yankov, R. A.;
Skorupa, W.;
Tyagulskii, I. P.;
Lysenko, V. S.;
Prucnal, S.;
Gebel, T.;
Rebohle, L.

Publication type:

Article

Photovoltaic properties and photoconductivity in multilayer Ge/Si heterostructures with Ge nanoislands.

Published in:

Journal of Materials Science, 2011, v. 46, n. 17, p. 5737, doi. 10.1007/s10853-011-5528-2

By:

Kondratenko, S. V.;
Vakulenko, O. V.;
Kozyrev, Yu. N.;
Rubezhanska, M. Yu.;
Naumovets, A. G.;
Nikolenko, A. S.;
Lysenko, V. S.;
Strelchuk, V. V.;
Teichert, C.

Publication type:

Article

FORMATION AND STABILITY OF GOLD NANOPARTICLES IN COLLOIDS PREPARED BY CITRATE METHOD.

Published in:

Chemistry, Physics & Technology of Surface / Khimiya, Fizyka ta Tekhnologiya Poverhni, 2023, v. 14, n. 3, p. 310, doi. 10.15407/hftp14.03.310

By:

Vityuk, N. V.;
Eremenko, A. M.;
Rusinchuk, N. М.;
Lozovski, V. Z.;
Lokshyn, M. М.;
Lysenko, V. S.;
Mukha, Iu. P.

Publication type:

Article

The nature of white luminescence in SiO2:C layers.

Published in:

Technical Physics Letters, 2009, v. 35, n. 6, p. 559, doi. 10.1134/S1063785009060224

By:

Vasin, A. V.;
Kushnirenko, V. I.;
Lysenko, V. S. L.;
Nazarov, A. N.;
Ishikawa, Yukari;
Salonen, J.

Publication type:

Article

Bimetallic Sulfur-Reducing Additives Based on Al-MCM-41 Structured Aluminosilicate for Cracking Catalysts.

Published in:

Petroleum Chemistry, 2018, v. 58, n. 3, p. 214, doi. 10.1134/S0965544118030088

By:

Glotov, A. P.;
Levshakov, N. S.;
Vutolkina, A. V.;
Lysenko, S. V.

Publication type:

Article

Mesoporous aluminosilicates as components of gas oil cracking and higher-alkane hydroisomerization catalysts.

Published in:

Petroleum Chemistry, 2011, v. 51, n. 3, p. 151, doi. 10.1134/S0965544111030091

By:

Lysenko, S. V.;
Kryukov, I. O.;
Sarkisov, O. A.;
Abikenova, A. B.;
Baranova, S. V.;
Ostroumova, V. A.;
Kardashev, S. V.;
Kulikov, A. B.;
Karakhanov, E. A.

Publication type:

Article

Impedance spectroscopy of single graphene layer at gas adsorption.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 9, p. 1941, doi. 10.1002/pssa.201532101

By:

Skryshevsky, V. A.;
Milovanov, Yu. S.;
Gavrilchenko, I. V.;
Tiagulskyi, S. I.;
Rusavsky, A. V.;
Lysenko, V. S.;
Nazarov, A. N.

Publication type:

Article

Kinetics of Structural and Phase Transformations in Thin SiOx Films in the Course of a Rapid Thermal Annealing.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1197, doi. 10.1134/1.2085270

By:

Dan'ko, V. A.;
Indutnyı, I. Z.;
Lysenko, V. S.;
Maıdanchuk, I. Yu.;
Min'ko, V. I.;
Nazarov, A. N.;
Tkachenko, A. S.;
Shepelyavyı, P. E.

Publication type:

Article

The Influence of Vacuum Annealing Temperature on the Fundamental Absorption Edge and Structural Relaxation of a-SiC:H Films.

Published in:

Semiconductors, 2005, v. 39, n. 5, p. 572, doi. 10.1134/1.1923567

By:

Vasin, A. V.;
Rusavsky, A. V.;
Lysenko, V. S.;
Nazarov, A. N.;
Kushnirenko, V. I.;
Starik, S. P.;
Stepanov, V. G.

Publication type:

Article

Effect of Erbium on Electronic Traps in PECVD-grown a-Si:H(Er)/c-Si Structures.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 621, doi. 10.1134/1.1379390

By:

Lysenko, V. S.;
Tyagulskiı, I. P.;
Osiyuk, I. N.;
Nazarov, A. N.;
Vovk, Ya. N.;
Gomenyuk, Yu. V.;
Terukov, E. I.;
Kon’kov, O. I.

Publication type:

Article

Microprismatic plane-focusing Fresnel lenses for light concentration in solar photovoltaic modules.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 2, p. 188, doi. 10.15407/spqeo26.02.188

By:

Antonov, E. E.;
Kondratenko, S. V.;
Lysenko, V. S.;
Petrov, V. V.;
Zenin, V. N.

Publication type:

Article

Nanophysics in modern medicine.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 2, p. 185, doi. 10.15407/spqeo25.02.185

By:

Lozovski, V. Z.;
Lysenko, V. S.;
Rusinchuk, N. M.

Publication type:

Article

The advancement of silicon-on-insulator (SOI) devices and their basic properties.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 227, doi. 10.15407/spqeo23.03.227

By:

Rudenko, T. E.;
Nazarov, A. N.;
Lysenko, V. S.

Publication type:

Article

Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 259, doi. 10.15407/spqeo20.02.259

By:

Iliash, S. A.;
Hyrka, Yu. V.;
Kondratenko, S. V.;
Lysenko, V. S.;
Kozyrev, Yu. M.;
Lendel, V. V.

Publication type:

Article

Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 259, doi. 10.15407/spqeo20.02.259

By:

Iliash, S. A.;
Hyrka, Yu. V.;
Kondratenko, S. V.;
Lysenko, V. S.;
Kozyrev, Yu. M.;
Lendel, V. V.

Publication type:

Article

Analysis of multichannel optical rotary connectors based on the compensation operating principle with mirror and prismatic optical compensators (Part 1).

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 1, p. 1, doi. 10.15407/spqeo20.01.001

By:

Shapar, V. M.;
Lysenko, V. S.;
Savchuk, A. V.

Publication type:

Article

Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si1-xCx:H films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 63

By:

Vasin, A. V.;
Ishikawa, Y.;
Rusavsky, A. V.;
Nazarov, A. N.;
Konchitz, A. A.;
Lysenko, V. S.

Publication type:

Article

Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 331

By:

Melnichuk, Ye. Ye.;
Hyrka, Yu. V.;
Kondratenko, S. V.;
Kozyrev, Yu. N.;
Lysenko, V. S.

Publication type:

Article

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 34

By:

Tiagulskyi, S. I.;
Nazarov, A. N.;
Gordienko, S. O.;
Vasin, A. V.;
Rusavsky, A. V.;
Nazarova, T. M.;
Gomeniuk, Yu. V.;
Rudko, G. V.;
Lysenko, V. S.;
Rebohle, L.;
Voelskow, M.;
Skorupa, W.;
Koshka, Y.

Publication type:

Article

Graphene layers fabricated from the Ni/a-SiC bilayer precursor.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 322

By:

Nazarov, A. N.;
Vasin, A. V.;
Gordienko, S. O.;
Lytvyn, P. M.;
Strelchuk, V. V.;
Nikolenko, A. S.;
Stubrov, Yu. Yu.;
Hirov, A. S.;
Rusavsky, A. V.;
Popov, V. P.;
Lysenko, V. S.

Publication type:

Article

Novel hysteresis effect in ultrathin epitaxial Gd2O3 high-k dielectric.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 324, doi. 10.15407/spqeo11.04.324

By:

Nazarov, A. N.;
Gomeniuk, Y. V.;
Gomeniuk, Y. Y.;
Lysenko, V. S.;
Gottlob, H. D. B.;
Schmidt, M.;
Lemme, M. C.;
Czernohorsky, M.;
Osten, H. J.

Publication type:

Article

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 98, doi. 10.15407/spqeo11.04.319

By:

Nazarov, A. N.;
Osiyuk, I. N.;
Tiagulskyi, S. I.;
Lysenko, V. S.;
Tyagulskyy, I. P.;
Torbin, V. N.;
Omelchuk, V. V.;
Nazarova, T. M.;
Rebohle, L.;
Skorupa, W.

Publication type:

Article

Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 2, p. 101, doi. 10.15407/spqeo11.02.101

By:

Nazarov, A. N.;
Lysenko, V. S.;
Nazarova, T. M.

Publication type:

Article

Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic temperatures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 34, doi. 10.15407/spqeo10.02.034

By:

Lysenko, V. S.;
Tyagulsky, I. P.;
Osiyuk, I. N.;
Nazarov, A. N.

Publication type:

Article

Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 2, p. 69, doi. 10.15407/spqeo9.02.069

By:

Houk, Y.;
Nazarov, A. N.;
Turchanikov, V. I.;
Lysenko, V. S.;
Andriaensen, S.;
Flandre, D.

Publication type:

Article

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 9, doi. 10.15407/spqeo9.01.009

By:

Indutnyy, I. Z.;
Lysenko, V. S.;
Maidanchuk, I. Yu.;
Min’ko, V. I.;
Nazarov, A. N.;
Tkachenko, A. S.;
Shepeliavyi, P. E.;
Dan’ko, V. A.

Publication type:

Article

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 90, doi. 10.15407/spqeo8.01.090

By:

Nazarov, A. N.;
Skorupa, W.;
Vovk, Ja. N.;
Osiyuk, I. N.;
Tkachenko, A. S.;
Tyagulskii, I. P.;
Lysenko, V. S.;
Gebel, T.;
Rebohle, L.;
Yankov, R. A.;
Nazarova, T. M.

Publication type:

Article

Effect of PEDOT:PSS Layer Deposition on Electrical and Photoelectrical Properties of n+-ZnO/n-Si Heterostructure.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 5, p. 3112, doi. 10.1007/s11664-023-10276-2

By:

Gomeniuk, Y. V.;
Gomeniuk, Y. Y.;
Kondratenko, S. V.;
Rudenko, T. E.;
Vasin, A. V.;
Rusavsky, A. V.;
Slobodian, O. M.;
Tyagulskyy, I. P.;
Kostylyov, V. P.;
Vlasiuk, V. M.;
Tiagulskyi, S. I.;
Yatskiv, R.;
Lysenko, V. S.;
Nazarov, A. N.

Publication type:

Article

A Review of Riverine Fluxes of Hexachlorocyclohexane and DDT to the Azov and Black Seas from the Former USSR and Russian Federation.

Published in:

Journal of Environmental Science & Health. Part A. Toxic/Hazardous Substances & Environmental Engineering, 2003, v. 38, n. 5, p. 753, doi. 10.1081/ESE-120018589

By:

Zhulidov, Alexander V.;
Robarts, Richard D.;
Headley, John V.;
Korotova, L. G.;
Zhulidov, Daniel A.;
Zhulidova, Olga V.;
Chernousov, S. Ya.;
Khlobystov, V. V.;
Pavlov, Dima F.;
Lysenko, V. S.;
Korneev, V. V.

Publication type:

Article

Works matching AU Lysenko, V. S.

Oxidation of Dibenzothiophene with the Subsequent Bioconversion of Sulfone.

Sulfur-Reducing Additives Based on Aluminosilicates Al-SBA-15 and Al-SBA-16 for Cracking catalysts.

Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes.

Photovoltaic properties and photoconductivity in multilayer Ge/Si heterostructures with Ge nanoislands.

FORMATION AND STABILITY OF GOLD NANOPARTICLES IN COLLOIDS PREPARED BY CITRATE METHOD.

The nature of white luminescence in SiO<sub>2</sub>:C layers.

Bimetallic Sulfur-Reducing Additives Based on Al-MCM-41 Structured Aluminosilicate for Cracking Catalysts.

Mesoporous aluminosilicates as components of gas oil cracking and higher-alkane hydroisomerization catalysts.

Impedance spectroscopy of single graphene layer at gas adsorption.

Kinetics of Structural and Phase Transformations in Thin SiO<sub>x</sub> Films in the Course of a Rapid Thermal Annealing.

The Influence of Vacuum Annealing Temperature on the Fundamental Absorption Edge and Structural Relaxation of a-SiC:H Films.

Effect of Erbium on Electronic Traps in PECVD-grown a-Si:H(Er)/c-Si Structures.

Microprismatic plane-focusing Fresnel lenses for light concentration in solar photovoltaic modules.

Nanophysics in modern medicine.

The advancement of silicon-on-insulator (SOI) devices and their basic properties.

Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films.

Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films.

Analysis of multichannel optical rotary connectors based on the compensation operating principle with mirror and prismatic optical compensators (Part 1).

Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si<sub>1-x</sub>C<sub>x</sub>:H films.

Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface.

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.

Graphene layers fabricated from the Ni/a-SiC bilayer precursor.

Novel hysteresis effect in ultrathin epitaxial Gd<sub>2</sub>O<sub>3</sub> high-k dielectric.

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions.

Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers.

Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic temperatures.

Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation.

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiO<sub>x</sub> films.

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment.

Effect of PEDOT:PSS Layer Deposition on Electrical and Photoelectrical Properties of n<sup>+</sup>-ZnO/n-Si Heterostructure.

A Review of Riverine Fluxes of Hexachlorocyclohexane and DDT to the Azov and Black Seas from the Former USSR and Russian Federation.