Found: 13
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Plasma-assisted molecular beam epitaxy of AlGaN heterostructures for deep-ultraviolet optically pumped lasers.
- Published in:
- 2013
- By:
- Publication type:
- Editorial
Photoluminescence of Low-Density Polyethylene Composites with the CaGa<sub>2</sub>S<sub>4</sub>:Eu<sup>2+</sup> Phosphor.
- Published in:
- Journal of Applied Spectroscopy, 2024, v. 91, n. 3, p. 525, doi. 10.1007/s10812-024-01750-8
- By:
- Publication type:
- Article
Laser Synthesis and Optical Properties of Hybrid Silicon Nanostructures for Photothermal Conversion of Solar Radiation.
- Published in:
- Journal of Applied Spectroscopy, 2023, v. 90, n. 2, p. 346, doi. 10.1007/s10812-023-01541-7
- By:
- Publication type:
- Article
Effect of the Density of Surface V-Defects on Laser Properties of InGaN/GaN Heterostructures with Multiple Quantum Wells Grown on Silicon Substrates.
- Published in:
- Journal of Applied Spectroscopy, 2022, v. 88, n. 6, p. 1164, doi. 10.1007/s10812-022-01294-9
- By:
- Publication type:
- Article
Stimulated Emission and Optical Properties of Solid Solutions of Cu(In,Ga)Se<sub>2</sub> Direct Band Gap Semiconductors.
- Published in:
- Journal of Applied Spectroscopy, 2018, v. 85, n. 2, p. 267, doi. 10.1007/s10812-018-0643-3
- By:
- Publication type:
- Article
Temperature and excitation dependent photoluminescence of undoped and nitrogen-doped ZnSe epilayers.
- Published in:
- Physica Status Solidi (B), 1996, v. 193, n. 1, p. 257, doi. 10.1002/pssb.2221930127
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- Publication type:
- Article
AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy.
- Published in:
- Semiconductors, 2008, v. 42, n. 12, p. 1420, doi. 10.1134/S1063782608120099
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- Publication type:
- Article
Lasing in Cd(Zn)Se/ZnMgSSe Heterostructures Pumped by Nitrogen and InGaN/GaN Lasers.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1099, doi. 10.1134/1.1797493
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- Publication type:
- Article
Anisotropic properties of MOVPE-grown m-plane GaN layers on LiAlO<sub>2</sub> substrates.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1750, doi. 10.1002/pssb.200983521
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- Publication type:
- Article
m -plane GaN/InGaN/AlInN on LiAlO<sub>2</sub> grown by MOVPE.
- Published in:
- Physica Status Solidi (B), 2008, v. 245, n. 5, p. 893, doi. 10.1002/pssb.200778565
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- Publication type:
- Article
Spontaneous and Stimulated Emission in Thin Films of Cu(In1 –xGax)(SySe1 –y)2 Solid Solutions in the Сomposition of Solar Cells.
- Published in:
- Semiconductors, 2020, v. 54, n. 10, p. 1247, doi. 10.1134/S1063782620100310
- By:
- Publication type:
- Article
MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al<sub>2</sub>O<sub>3</sub>.
- Published in:
- Semiconductors, 2018, v. 52, n. 16, p. 2107, doi. 10.1134/S1063782618160170
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- Publication type:
- Article
Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se<sub>2</sub> Films Deposited by Magnetron-Assisted Sputtering.
- Published in:
- Semiconductors, 2018, v. 52, n. 10, p. 1238, doi. 10.1134/S1063782618100196
- By:
- Publication type:
- Article