Works by Lunin, R.

Results: 25

Superconductivity, Electron Paramagnetic Resonance, and Raman Scattering Studies of Heterofullerides with Cs and Mg.

Published in:

Advances in Condensed Matter Physics, 2008, p. 1, doi. 10.1155/2008/941372

By:

Kulbachinskii, V. A.;
Bulychev, B. M.;
Kytin, V. G.;
Krechetov, A. V.;
Konstantinova, E. A.;
Lunin, R. A.

Publication type:

Article

Effect of thallium doping on the mobility of electrons in BiSe and holes in SbTe.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 869, doi. 10.1134/S1063782616070113

By:

Kudryashov, A.;
Kytin, V.;
Lunin, R.;
Kulbachinskii, V.;
Banerjee, A.

Publication type:

Article

Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic InAlAs/InGaAs/InAlAs structures on GaAs substrates.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 921, doi. 10.1134/S1063782615070131

By:

Kulbachinskii, V.;
Oveshnikov, L.;
Lunin, R.;
Yuzeeva, N.;
Galiev, G.;
Klimov, E.;
Pushkarev, S.;
Maltsev, P.

Publication type:

Article

Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an InGaAs quantum well with InAs inserts.

Published in:

Semiconductors, 2015, v. 49, n. 2, p. 199, doi. 10.1134/S1063782615020165

By:

Kulbachinskii, V.;
Oveshnikov, L.;
Lunin, R.;
Yuzeeva, N.;
Galiev, G.;
Klimov, E.;
Maltsev, P.

Publication type:

Article

Persistent photoconductivity and electron mobility in InAlAs/InGaAs/InAlAs/InP quantum-well structures.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 935, doi. 10.1134/S1063782613070130

By:

Kulbachinskii, V.;
Lunin, R.;
Yuzeeva, N.;
Vasilievskii, I.;
Galiev, G.;
Klimov, E.

Publication type:

Article

Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1321, doi. 10.1134/S1063782611100125

By:

Khabibullin, R.;
Vasil'evskii, I.;
Galiev, G.;
Klimov, E.;
Ponomarev, D.;
Lunin, R.;
Kulbachinskii, V.

Publication type:

Article

Persistent IR photoconductivity in InAs/GaAs structures with QD layers.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 210, doi. 10.1134/S1063782606020187

By:

Kul'bachinskiĭ, V. A.;
Rogozin, V. A.;
Kytin, V. G.;
Lunin, R. A.;
Zvonkov, B. N.;
Dashevsky, Z. M.;
Casian, V. A.

Publication type:

Article

Specific Features of Photoluminescence of InAs/GaAs QD Structures at Different Pumping Levels.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1308, doi. 10.1134/1.2128456

By:

Kulbachinskii, V. A.;
Rogozin, V. A.;
Lunin, R. A.;
Belov, A. A.;
Karuzskiĭ, A. L.;
Perestoronin, A. V.;
Zdoroveishchev, A. V.

Publication type:

Article

Electron Magnetotransport in Coupled Quantum Wells with Double-Sided Doping.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1326, doi. 10.1134/1.1823069

By:

Galiev, G. B.;
Kaminski&icaron;, V. É;
Vasil'evskií, I. S.;
Kul'bachinskií, V. A.;
Lunin, R. A.

Publication type:

Article

Electron Transport in Coupled Quantum Wells with Double-Sided Doping.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 686, doi. 10.1134/1.1582536

By:

Galiev, G. B.;
Kaminskiı, V. E.;
Mokerov, V. G.;
Kul’bachinskiı, V. A.;
Lunin, R. A.;
Vasil’evskiı, I. S.;
Derkach, A. V.

Publication type:

Article

Transport and optical properties of tin δ-doped GaAs structures.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 771, doi. 10.1134/1.1187779

By:

Kul’bachinskiı, V. A.;
Kytin, V. G.;
Lunin, R. A.;
Mokerov, V. G.;
Senichkin, A. P.;
Bugaev, A. S.;
Karuzskiı, A. L.;
Perestoronin, A. V.;
van Schaijk, R. T. F.;
Visser, A. de

Publication type:

Article

Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots.

Published in:

Semiconductors, 1999, v. 33, n. 3, p. 318

By:

Kul’bachinskiı, V. A.;
Kytin, V. G.;
Lunin, R. A.;
Golikov, A. V.;
Malkina, I. G.;
Zvonkov, B. N.;
Saf’yanov, Yu. N.

Publication type:

Article

Conductance Anisotropy of δ-Si Doped GaAs Layers Grown by Molecular Beam Epitaxy on (111)A GaAs Substrates and Misoriented in the [211] Direction.

Published in:

Doklady Physics, 2002, v. 47, n. 6, p. 419, doi. 10.1134/1.1493376

By:

Galiev, G. B.;
Mokerov, V. G.;
Kul’bachinskiı, V. A.;
Kytin, V. G.;
Lunin, R. A.;
Derkach, A. V.;
Vasil’evskiı, I. S.

Publication type:

Article

Superconductivity of Fullerides AnHgxC60 (A = K,Rb,Cs; n = 2,3) Synthesized from Amalgams.

Published in:

Fullerenes, Nanotubes & Carbon Nanostructures, 2010, v. 18, n. 4-6, p. 381, doi. 10.1080/1536383X.2010.487435

By:

Bulychev, B. M.;
Kulbachinskii, V. A.;
Lunin, R. A.;
Kytin, V. G.;
Velikodny, Yu. A.

Publication type:

Article

Effect of selenium on the galvanomagnetic properties of the diluted magnetic semiconductor Hg1 _ xMnxTe1 _ ySey

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 49, doi. 10.1134/1.1187367

By:

Kulbachinskii, V. A.;
Churilov, I. A.;
Maryanchuk, P. D.;
Lunin, R. A.

Publication type:

Article

Quenching of photoconductivity by a strong electric field in tin δ-doped GaAs structures.

Published in:

JETP Letters, 1996, v. 63, n. 5, p. 336, doi. 10.1134/1.567027

By:

Kul’bachinskii, V. A.;
Lunin, R. A.;
Bogdanov, E. V.;
Kytin, V. G.;
Senichkin, A. P.;
Kadushkin, V. I.

Publication type:

Article

Electron mobilities in isomorphic InGaAs quantum wells on InP substrates.

Published in:

Journal of Experimental & Theoretical Physics, 2013, v. 116, n. 5, p. 755, doi. 10.1134/S1063776113050063

By:

Kulbachinskii, V.;
Lunin, R.;
Yuzeeva, N.;
Vasil'evskii, I.;
Galiev, G.;
Klimov, E.

Publication type:

Article

Influence of state hybridization on low-temperature electron transport in shallow quantum wells.

Published in:

Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 174, doi. 10.1134/S1063776107070382

By:

Vasilevskii, I. S.;
Kulbachinskiĭ, V. A.;
Lunin, R. A.;
Galiev, G. B.;
Mokerov, V. G.

Publication type:

Article

Superconductivity and spectroscopy of heterofullerides Rb2MC60, K2MC60, and KM2C60 (M = Mg, Be).

Published in:

Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 250, doi. 10.1134/S1063776107070552

By:

Kytin, V. G;
Bulychev, B. M.;
Krechetov, A. V.;
Konstantinova, E. A.;
Kulbachinskiĭ, V. A.;
Lunin, R. A.

Publication type:

Article

Electrical Transport and Persistent Photoconductivity in Quantum Dot Layers in InAs/GaAs Structures.

Published in:

Journal of Experimental & Theoretical Physics, 2001, v. 93, n. 4, p. 815, doi. 10.1134/1.1420451

By:

Kul’bachinskii, V. A.;
Lunin, R. A.;
Kytin, V. G.;
Golikov, A. V.;
Demin, A. V.;
Rogozin, V. A.;
Zvonkov, B. N.;
Nekorkin, S. M.;
Filatov, D. O.

Publication type:

Article

Negative persistent photoconductivity in GaAs(δ-Sn) structures.

Published in:

Journal of Experimental & Theoretical Physics, 1999, v. 89, n. 6, p. 1154, doi. 10.1134/1.559065

By:

Kul’bachinskiı, V. A.;
Kytin, V. G.;
Lunin, R. A.;
Golikov, A. V.;
Demin, A. V.;
Bugaev, A. S.;
Senichkin, A. P.;
De Visser, A.;
Van Schaijk, R. T. F.

Publication type:

Article

Galvanomagnetic properties of Hg[sub 1-x]Mn[sub x]Te[sub 1-y]Se[sub y] semimagnetic semiconductors.

Published in:

Journal of Experimental & Theoretical Physics, 1997, v. 85, n. 5, p. 989

By:

Kul’bachinskiı, V. A.;
Churilov, I. A.;
Mar’yanchuk, P. D.;
Lunin, R. A.

Publication type:

Article

Enhancement of Electron Mobility and Photoconductivity in Quantum Well In0:52Al0:48As/In0:53Ga0:47As/In0:52A10:48As on InP Substrate.

Published in:

Acta Physica Polonica: A, 2013, v. 123, n. 2, p. 345, doi. 10.12693/APhysPolA.123.345

By:

KULBACHINSKII, V. A.;
LUNIN, R. A.;
YUZEEVA, N. A.;
GALIEV, G. B.;
VASILIEVSKII, I. S.;
KLIMOV, E. A.

Publication type:

Article

Superconductivity of Fullerides with Composition AGa $$_{x}$$ C $$_{60}$$ and AGa $$_{x}$$ M $$_{y}$$ C $$_{60}$$ (A = K, Rb; M = In, Sn, Bi).

Published in:

Journal of Low Temperature Physics, 2016, v. 185, n. 5/6, p. 502, doi. 10.1007/s10909-016-1476-1

By:

Kulbachinskii, V.;
Lunin, R.;
Velikodny, Yu.;
Bulychev, B.

Publication type:

Article

Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content.

Published in:

Journal of Low Temperature Physics, 2016, v. 185, n. 5/6, p. 701, doi. 10.1007/s10909-016-1589-6

By:

Yuzeeva, N.;
Sorokoumova, A.;
Lunin, R.;
Oveshnikov, L.;
Galiev, G.;
Klimov, E.;
Lavruchin, D.;
Kulbachinskii, V.

Publication type:

Article

Works by Lunin, R.

Superconductivity, Electron Paramagnetic Resonance, and Raman Scattering Studies of Heterofullerides with Cs and Mg.

Effect of thallium doping on the mobility of electrons in BiSe and holes in SbTe.

Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic InAlAs/InGaAs/InAlAs structures on GaAs substrates.

Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an InGaAs quantum well with InAs inserts.

Persistent photoconductivity and electron mobility in InAlAs/InGaAs/InAlAs/InP quantum-well structures.

Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density.

Persistent IR photoconductivity in InAs/GaAs structures with QD layers.

Specific Features of Photoluminescence of InAs/GaAs QD Structures at Different Pumping Levels.

Electron Magnetotransport in Coupled Quantum Wells with Double-Sided Doping.

Electron Transport in Coupled Quantum Wells with Double-Sided Doping.

Transport and optical properties of tin δ-doped GaAs structures.

Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots.

Conductance Anisotropy of δ-Si Doped GaAs Layers Grown by Molecular Beam Epitaxy on (111)A GaAs Substrates and Misoriented in the [211] Direction.

Superconductivity of Fullerides AnHgxC60 (A = K,Rb,Cs; n = 2,3) Synthesized from Amalgams.

Effect of selenium on the galvanomagnetic properties of the diluted magnetic semiconductor Hg1 _ xMnxTe1 _ ySey

Quenching of photoconductivity by a strong electric field in tin δ-doped GaAs structures.

Electron mobilities in isomorphic InGaAs quantum wells on InP substrates.

Influence of state hybridization on low-temperature electron transport in shallow quantum wells.

Superconductivity and spectroscopy of heterofullerides Rb<sub>2</sub>MC<sub>60</sub>, K<sub>2</sub>MC<sub>60</sub>, and KM<sub>2</sub>C<sub>60</sub> (M = Mg, Be).

Electrical Transport and Persistent Photoconductivity in Quantum Dot Layers in InAs/GaAs Structures.

Negative persistent photoconductivity in GaAs(δ-Sn) structures.

Galvanomagnetic properties of Hg[sub 1-x]Mn[sub x]Te[sub 1-y]Se[sub y] semimagnetic semiconductors.

Enhancement of Electron Mobility and Photoconductivity in Quantum Well In<sub>0:52</sub>Al<sub>0:48</sub>As/In<sub>0:53</sub>Ga<sub>0:47</sub>As/In<sub>0:52</sub>A10:48As on InP Substrate.

Superconductivity of Fullerides with Composition AGa $$_{x}$$ C $$_{60}$$ and AGa $$_{x}$$ M $$_{y}$$ C $$_{60}$$ (A = K, Rb; M = In, Sn, Bi).

Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content.