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InGaAlN heterostructures for LEDs grown on patterned sapphire substrates.
Published in:
Technical Physics Letters, 2008, v. 34, n. 11, p. 924, doi. 10.1134/S1063785008110072
By:
- Lundin, W. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Nikolaev, A. E.;
- Lundina, E. Yu.;
- Sakharov, A. V.;
- Troshkov, S. I.;
- Tsatsul'nikov, A. F.
Publication type:
Article
Long-Term Stability of Long-Wavelength (>1.25 μm) Quantum-Dot Lasers Fabricated on GaAs Substrates.
Published in:
Technical Physics, 2003, v. 48, n. 1, p. 131, doi. 10.1134/1.1538744
By:
- Lundina, E. Yu.;
- Shernyakov, Yu. M.;
- Maksimov, M. V.;
- Kayander, I. N.;
- Tsatsul’nikov, A. F.;
- Ledentsov, N. N.;
- Zhukov, A. E.;
- Maleev, N. A.;
- Mikhrin, S. S.;
- Ustinov, V. M.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Insulating GaN Epilayers Co-Doped with Iron and Carbon.
Published in:
Technical Physics Letters, 2019, v. 45, n. 7, p. 723, doi. 10.1134/S106378501907023X
By:
- Lundin, W. V.;
- Sakharov, A. V.;
- Zavarin, E. E.;
- Zakgeim, D. A.;
- Lundina, E. Yu.;
- Brunkov, P. N.;
- Tsatsulnikov, A. F.
Publication type:
Article