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Works matching AU Liu, Shang-jun

Results: 2

1

Structural design and fabrication of 830 nm GaAsP/AlGaAs low polarization superluminescent diode with tensile-strained wells.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 12, p. 10102, doi. 10.1007/s10854-018-9055-7

By:

Liu, Shang-jun;
Zhou, Yong;
Zhou, Shuai;
Mo, Cai-ping;
Zhao, Hong;
Ding, Shi-hao;
Tian, Kun;
Tang, Zu-rong

Publication type:

Article

2

Superluminescent Diode at 0.8‐µm with a GaAsP/AlGaAs Tensile‐Strained Quantum Well.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 18, p. 1, doi. 10.1002/pssa.201800176

By:

Zhou, Shuai;
Tang, Zu‐Rong;
Liu, Shang‐Jun;
Zhou, Yong;
Zhang, Jing;
Duan, Li‐Hua;
Tian, Kun;
Zhao, Kai‐Mei;
Feng, Chen

Publication type:

Article