Found: 14
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The Effect of Multiknowledge Individuals on Performance in Cross-Functional New Product Development Teams.
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- Journal of Product Innovation Management, 2009, v. 26, n. 1, p. 86, doi. 10.1111/j.1540-5885.2009.00336.x
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- Article
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 5, p. 898, doi. 10.3390/nano13050898
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- Article
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer.
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- Nanomaterials (2079-4991), 2020, v. 10, n. 11, p. 2175, doi. 10.3390/nano10112175
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- Article
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors.
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- Nanomaterials (2079-4991), 2020, v. 10, n. 11, p. 2116, doi. 10.3390/nano10112116
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- Article
Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study.
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- Micromachines, 2020, v. 11, n. 1, p. 53, doi. 10.3390/mi11010053
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- Article
X-band 100 W solid-state power amplifier using a 0.25 μM GaN HEMT technology.
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- Microwave & Optical Technology Letters, 2015, v. 57, n. 1, p. 212, doi. 10.1002/mop.28814
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- Article
Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect.
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- Applied Sciences (2076-3417), 2019, v. 9, n. 17, p. 3610, doi. 10.3390/app9173610
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- Article
Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors.
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- Crystals (2073-4352), 2021, v. 11, n. 11, p. 1414, doi. 10.3390/cryst11111414
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- Article
Growth of 10 nm-thick AlIn(Ga)N/GaN heterostructure with high electron mobility and low sheet resistance.
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- Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600731
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- Article
Human body model electrostatic discharge tester using metal oxide semiconductor‐controlled thyristors.
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- ETRI Journal, 2023, v. 45, n. 3, p. 543, doi. 10.4218/etrij.2022-0077
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- Article
Power module stray inductance extraction: Theoretical and experimental analysis.
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- ETRI Journal, 2021, v. 43, n. 5, p. 891, doi. 10.4218/etrij.2020-0420
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- Article
Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure.
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- Applied Sciences (2076-3417), 2018, v. 8, n. 6, p. 974, doi. 10.3390/app8060974
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- Publication type:
- Article
Small noncoding RNAs in FSHD2 muscle cells reveal both DUX4- and SMCHD1-specific signatures.
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- Human Molecular Genetics, 2018, v. 27, n. 15, p. 2644, doi. 10.1093/hmg/ddy173
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- Article
Noise mitigation in 12‐to‐5 V DC‐DC converter using an embedded metal layout strategy.
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- IEEJ Transactions on Electrical & Electronic Engineering, 2021, v. 16, n. 9, p. 1289, doi. 10.1002/tee.23427
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- Article