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Half‐Valley Ohmic Contact: Contact‐Limited Valley‐Contrasting Current Injection (Adv. Funct. Mater. 16/2024).
- Published in:
- Advanced Functional Materials, 2024, v. 34, n. 16, p. 1, doi. 10.1002/adfm.202470091
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- Article
Half‐Valley Ohmic Contact: Contact‐Limited Valley‐Contrasting Current Injection.
- Published in:
- Advanced Functional Materials, 2024, v. 34, n. 16, p. 1, doi. 10.1002/adfm.202309848
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- Article
Quasi‐Continuous Tuning of Carrier Polarity in Monolayered Molybdenum Dichalcogenides through Substitutional Vanadium Doping.
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- Advanced Functional Materials, 2022, v. 32, n. 46, p. 1, doi. 10.1002/adfm.202204760
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- Article
Straintronics with van der Waals materials.
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- NPJ Quantum Materials, 2021, v. 6, n. 1, p. 1, doi. 10.1038/s41535-021-00360-3
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- Article
Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi<sub>2</sub>N<sub>4</sub> and WSi<sub>2</sub>N<sub>4</sub> monolayers.
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- NPJ 2D Materials & Applications, 2021, v. 5, n. 1, p. 1, doi. 10.1038/s41699-021-00251-y
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- Article
Cataloguing MoSi<sub>2</sub>N<sub>4</sub> and WSi<sub>2</sub>N<sub>4</sub> van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications (Adv. Mater. Interfaces 2/2023).
- Published in:
- Advanced Materials Interfaces, 2023, v. 10, n. 2, p. 1, doi. 10.1002/admi.202201856
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Cataloguing MoSi<sub>2</sub>N<sub>4</sub> and WSi<sub>2</sub>N<sub>4</sub> van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications.
- Published in:
- Advanced Materials Interfaces, 2023, v. 10, n. 2, p. 1, doi. 10.1002/admi.202370006
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- Article
2D Layered Materials for Memristive and Neuromorphic Applications.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901107
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- Article
S‐Type Negative Differential Resistance in Semiconducting Transition‐Metal Dichalcogenides.
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- Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800853
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- Article
Approaching the Intrinsic Threshold Breakdown Voltage and Ultrahigh Gain in a Graphite/InSe Schottky Photodetector.
- Published in:
- Advanced Materials, 2022, v. 34, n. 47, p. 1, doi. 10.1002/adma.202206196
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- Article
Edge‐Epitaxial Growth of InSe Nanowires toward High‐Performance Photodetectors.
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- Small, 2020, v. 16, n. 4, p. N.PAG, doi. 10.1002/smll.201905902
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- Article
Emerging Low‐Dimensional Heterostructure Devices for Neuromorphic Computing.
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- Small Structures, 2022, v. 3, n. 10, p. 1, doi. 10.1002/sstr.202200064
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- Article
A Braitenberg Vehicle Based on Memristive Neuromorphic Circuits.
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- Advanced Intelligent Systems (2640-4567), 2020, v. 2, n. 1, p. N.PAG, doi. 10.1002/aisy.201900103
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- Article
A Braitenberg Vehicle Based on Memristive Neuromorphic Circuits.
- Published in:
- Advanced Intelligent Systems (2640-4567), 2020, v. 2, n. 1, p. N.PAG, doi. 10.1002/aisy.201900103
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- Article
Networking retinomorphic sensor with memristive crossbar for brain-inspired visual perception.
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- National Science Review, 2021, v. 8, n. 2, p. 1, doi. 10.1093/nsr/nwaa172
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- Article
2D Black Phosphorus/SrTiO<sub>3</sub>-Based Programmable Photoconductive Switch.
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- Advanced Materials, 2016, v. 28, n. 35, p. 7768, doi. 10.1002/adma.201602280
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- Article
Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors.
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- Advanced Functional Materials, 2019, v. 29, n. 29, p. N.PAG, doi. 10.1002/adfm.201902483
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- Article
Asymmetric Schottky Contacts in Bilayer MoS<sub>2</sub> Field Effect Transistors.
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- Advanced Functional Materials, 2018, v. 28, n. 28, p. 1, doi. 10.1002/adfm.201800657
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- Article
Concurrent Synthesis of High-Performance Monolayer Transition Metal Disulfides.
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- Advanced Functional Materials, 2017, v. 27, n. 15, p. n/a, doi. 10.1002/adfm.201605896
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- Article
Electrical switching of Ising-superconducting nonreciprocity for quantum neuronal transistor.
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- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-48882-1
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- Article
Interfacial magnetic spin Hall effect in van der Waals Fe<sub>3</sub>GeTe<sub>2</sub>/MoTe<sub>2</sub> heterostructure.
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- Nature Communications, 2024, p. 1, doi. 10.1038/s41467-024-45318-8
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- Article
Strain‐Sensitive Magnetization Reversal of a van der Waals Magnet.
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- Advanced Materials, 2020, v. 32, n. 42, p. 1, doi. 10.1002/adma.202004533
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Van der Waals Heterostructures for High‐Performance Device Applications: Challenges and Opportunities.
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- Advanced Materials, 2020, v. 32, n. 27, p. 1, doi. 10.1002/adma.201903800
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Thermionic Energy Conversion Based on Graphene van der Waals Heterostructures.
- Published in:
- Scientific Reports, 2017, p. 46211, doi. 10.1038/srep46211
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- Article