Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices.
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- Crystals (2073-4352), 2022, v. 12, n. 8, p. 1085, doi. 10.3390/cryst12081085
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- Article
Works by Letts, Edward
Results: 3
1
2
Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production.
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- Materials (1996-1944), 2019, v. 12, n. 12, p. 1925, doi. 10.3390/ma12121925
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- Article
3
Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation.
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- Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-024-83398-0
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- Publication type:
- Article