Found: 26
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Simulation modelling of III‐Nitride/β‐Ga<sub>2</sub>O<sub>3</sub> Nano‐HEMT for microwave and millimetre wave applications.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2022, v. 32, n. 12, p. 1, doi. 10.1002/mmce.23416
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- Article
Analytical Model Development for Unified 2D Electron Gas Sheet Charge Density of AlInN/GaN MOSHEMT.
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- International Journal of Electronics & Telecommunications, 2017, v. 63, n. 4, p. 363, doi. 10.1515/eletel-2017-0049
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- Article
Recent progress in CZTS (CuZnSn sulfide) thin-film solar cells: a review.
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- Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 3, p. 1, doi. 10.1007/s10854-024-11983-0
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Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga<sub>2</sub>O<sub>3</sub> substrate with variation of AlN spacer layer thickness.
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- Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 18, p. 1, doi. 10.1007/s10854-023-10867-z
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- Article
Effect of temperature dependence of 2DEG on device characteristics of field‐plated recessed‐gate III‐nitride/β‐Ga<sub>2</sub>O<sub>3</sub> nano‐HEMT.
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- International Journal of Numerical Modelling, 2024, v. 37, n. 4, p. 1, doi. 10.1002/jnm.3281
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- Article
The role of indium composition in In<sub>x</sub>Ga<sub>1−x</sub>N prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence.
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- International Journal of Numerical Modelling, 2024, v. 37, n. 2, p. 1, doi. 10.1002/jnm.3169
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- Article
Design and simulation of T‐gate AlN/β‐Ga<sub>2</sub>O<sub>3</sub> HEMT for DC, RF and high‐power nanoelectronics switching applications.
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- International Journal of Numerical Modelling, 2024, v. 37, n. 1, p. 1, doi. 10.1002/jnm.3146
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- Article
Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field‐plated III‐nitride nano‐HEMT on β‐Ga<sub>2</sub>O<sub>3</sub> substrate.
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- International Journal of Numerical Modelling, 2024, v. 37, n. 1, p. 1, doi. 10.1002/jnm.3138
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- Article
Analytical modeling of dielectric modulated negative capacitance MoS<sub>2</sub> field effect transistor for next‐generation label‐free biosensor.
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- International Journal of Numerical Modelling, 2023, v. 36, n. 2, p. 1, doi. 10.1002/jnm.3060
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- Article
Carrier transport mechanism in bottom gate thin‐film transistor with SnO as active layer for CMOS displays.
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- International Journal of Numerical Modelling, 2022, v. 35, n. 3, p. 1, doi. 10.1002/jnm.2975
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- Article
2DEG characteristics of InAlAs/InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics.
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- International Journal of Numerical Modelling, 2022, v. 35, n. 1, p. 1, doi. 10.1002/jnm.2941
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- Article
A novel β‐Ga<sub>2</sub>O<sub>3</sub> HEMT with f<sub>T</sub> of 166 GHz and X‐band P<sub>OUT</sub> of 2.91 W/mm.
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- International Journal of Numerical Modelling, 2021, v. 34, n. 1, p. 1, doi. 10.1002/jnm.2794
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Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices.
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- International Journal of Numerical Modelling, 2016, v. 29, n. 1, p. 83, doi. 10.1002/jnm.2048
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- Article
Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study.
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- IET Circuits, Devices & Systems (Wiley-Blackwell), 2020, v. 14, n. 7, p. 1018, doi. 10.1049/iet-cds.2020.0015
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- Article
Compact thermal noise model for enhancement mode N‐polar GaN MOS‐HEMT including 2DEG density solution with two sub‐bands.
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- IET Circuits, Devices & Systems (Wiley-Blackwell), 2018, v. 12, n. 6, p. 810, doi. 10.1049/iet-cds.2017.0226
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- Article
Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice‐matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor.
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- IET Circuits, Devices & Systems (Wiley-Blackwell), 2016, v. 10, n. 5, p. 423, doi. 10.1049/iet-cds.2015.0332
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- Article
Device Simulation of Ag<sub>2</sub>SrSnS<sub>4</sub> and Ag<sub>2</sub>SrSnSe<sub>4</sub> Based Thin‐Film Solar Cells from Scratch.
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- Advanced Theory & Simulations, 2022, v. 5, n. 2, p. 1, doi. 10.1002/adts.202100208
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- Article
Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence.
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- Micromachines, 2023, v. 14, n. 10, p. 1926, doi. 10.3390/mi14101926
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- Article
Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays.
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- Micromachines, 2019, v. 10, n. 8, p. 492, doi. 10.3390/mi10080492
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- Article
Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure.
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- Electronics (2079-9292), 2022, v. 11, n. 1, p. 91, doi. 10.3390/electronics11010091
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- Article
Comparative Study of III-Nitride Nano-HEMTs on Different Substrates for Emerging High-Power Nanoelectronics and Millimetre Wave Applications.
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- Journal of Electronic Materials, 2023, v. 52, n. 3, p. 1948, doi. 10.1007/s11664-022-10145-4
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- Article
Polarization-Engineered p-Type Electron-Blocking-Layer-Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for Enhanced Carrier Transport.
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- Journal of Electronic Materials, 2022, v. 51, n. 2, p. 838, doi. 10.1007/s11664-021-09363-z
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- Article
Linearity improvement in E-mode ferroelectric GaN MOS-HEMT using dual gate technology.
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- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 6, p. 618, doi. 10.1049/mnl.2018.5499
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- Article
Analytical model with two degree of freedom of piezo-magneto-elastic energy harvester for low-frequency wide bandwidth applications.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 6, p. 857, doi. 10.1049/mnl.2017.0633
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- Article
Spontaneous and piezo-phototronics effect on geometrical shape of III-Nitride wurtzite nanowires for high efficiency photovoltaic applications.
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- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 12, p. 924, doi. 10.1049/mnl.2017.0403
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- Article
Modeling and performance optimization of two‐terminal Cu<sub>2</sub>ZnSnS<sub>4</sub>–silicon tandem solar cells.
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- International Journal of Energy Research, 2021, v. 45, n. 7, p. 10527, doi. 10.1002/er.6540
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- Article