Works by Lemme, M. C.

Results: 7

Chemical vapor deposited graphene: From synthesis to applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 11, p. 2439, doi. 10.1002/pssa.201400049

By:

Kataria, S.;
Wagner, S.;
Ruhkopf, J.;
Gahoi, A.;
Pandey, H.;
Bornemann, R.;
Vaziri, S.;
Smith, A. D.;
Ostling, M.;
Lemme, M. C.

Publication type:

Article

Chemical vapor deposited graphene: From synthesis to applications (Phys. Status Solidi A 11∕2014).

Published in:

2014

By:

Kataria, S.;
Wagner, S.;
Ruhkopf, J.;
Gahoi, A.;
Pandey, H.;
Bornemann, R.;
Vaziri, S.;
Smith, A. D.;
Ostling, M.;
Lemme, M. C.

Publication type:

Other

Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators.

Published in:

NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00461-0

By:

Illarionov, Yu. Yu.;
Knobloch, T.;
Uzlu, B.;
Banshchikov, A. G.;
Ivanov, I. A.;
Sverdlov, V.;
Otto, M.;
Stoll, S. L.;
Vexler, M. I.;
Waltl, M.;
Wang, Z.;
Manna, B.;
Neumaier, D.;
Lemme, M. C.;
Sokolov, N. S.;
Grasser, T.

Publication type:

Article

Back Cover: Molecular beam epitaxy of graphene on mica (Phys. Status Solidi B 12/2012).

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 12, p. n/a, doi. 10.1002/pssb.201290032

By:

Lippert, G.;
Dabrowski, J.;
Yamamoto, Y.;
Herziger, F.;
Maultzsch, J.;
Baringhaus, J.;
Tegenkamp, C.;
Lemme, M. C.;
Mehr, W.;
Lupina, G.

Publication type:

Article

Molecular beam epitaxy of graphene on mica.

Published in:

Physica Status Solidi (B), 2012, v. 249, n. 12, p. 2507, doi. 10.1002/pssb.201200104

By:

Lippert, G.;
Dabrowski, J.;
Yamamoto, Y.;
Herziger, F.;
Maultzsch, J.;
Baringhaus, J.;
Tegenkamp, C.;
Lemme, M. C.;
Mehr, W.;
Lupina, G.

Publication type:

Article

Novel hysteresis effect in ultrathin epitaxial Gd2O3 high-k dielectric.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 324, doi. 10.15407/spqeo11.04.324

By:

Nazarov, A. N.;
Gomeniuk, Y. V.;
Gomeniuk, Y. Y.;
Lysenko, V. S.;
Gottlob, H. D. B.;
Schmidt, M.;
Lemme, M. C.;
Czernohorsky, M.;
Osten, H. J.

Publication type:

Article

Graphene field-effect devices.

Published in:

European Physical Journal: Special Topics, 2007, v. 148, n. 1, p. 19, doi. 10.1140/epjst/e2007-00222-8

By:

Echtermeyer, T. J.;
Lemme, M. C.;
Bolten, J.;
Baus, M.;
Ramsteiner, M.;
Kurz, H.

Publication type:

Article

Works by Lemme, M. C.

Chemical vapor deposited graphene: From synthesis to applications.

Chemical vapor deposited graphene: From synthesis to applications (Phys. Status Solidi A 11∕2014).

Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF<sub>2</sub> insulators.

Back Cover: Molecular beam epitaxy of graphene on mica (Phys. Status Solidi B 12/2012).

Molecular beam epitaxy of graphene on mica.

Novel hysteresis effect in ultrathin epitaxial Gd<sub>2</sub>O<sub>3</sub> high-k dielectric.

Graphene field-effect devices.