Works by Lemme, M. C.

Results: 7

Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators.
Published in:
NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00461-0
By:
- Illarionov, Yu. Yu.;
- Knobloch, T.;
- Uzlu, B.;
- Banshchikov, A. G.;
- Ivanov, I. A.;
- Sverdlov, V.;
- Otto, M.;
- Stoll, S. L.;
- Vexler, M. I.;
- Waltl, M.;
- Wang, Z.;
- Manna, B.;
- Neumaier, D.;
- Lemme, M. C.;
- Sokolov, N. S.;
- Grasser, T.
Publication type:
Article
Back Cover: Molecular beam epitaxy of graphene on mica (Phys. Status Solidi B 12/2012).
Published in:
Physica Status Solidi (B), 2012, v. 249, n. 12, p. n/a, doi. 10.1002/pssb.201290032
By:
- Lippert, G.;
- Dabrowski, J.;
- Yamamoto, Y.;
- Herziger, F.;
- Maultzsch, J.;
- Baringhaus, J.;
- Tegenkamp, C.;
- Lemme, M. C.;
- Mehr, W.;
- Lupina, G.
Publication type:
Article
Molecular beam epitaxy of graphene on mica.
Published in:
Physica Status Solidi (B), 2012, v. 249, n. 12, p. 2507, doi. 10.1002/pssb.201200104
By:
- Lippert, G.;
- Dabrowski, J.;
- Yamamoto, Y.;
- Herziger, F.;
- Maultzsch, J.;
- Baringhaus, J.;
- Tegenkamp, C.;
- Lemme, M. C.;
- Mehr, W.;
- Lupina, G.
Publication type:
Article
Novel hysteresis effect in ultrathin epitaxial Gd2O3 high-k dielectric.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 324, doi. 10.15407/spqeo11.04.324
By:
- Nazarov, A. N.;
- Gomeniuk, Y. V.;
- Gomeniuk, Y. Y.;
- Lysenko, V. S.;
- Gottlob, H. D. B.;
- Schmidt, M.;
- Lemme, M. C.;
- Czernohorsky, M.;
- Osten, H. J.
Publication type:
Article
Chemical vapor deposited graphene: From synthesis to applications.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 11, p. 2439, doi. 10.1002/pssa.201400049
By:
- Kataria, S.;
- Wagner, S.;
- Ruhkopf, J.;
- Gahoi, A.;
- Pandey, H.;
- Bornemann, R.;
- Vaziri, S.;
- Smith, A. D.;
- Ostling, M.;
- Lemme, M. C.
Publication type:
Article
Chemical vapor deposited graphene: From synthesis to applications (Phys. Status Solidi A 11∕2014).
Published in:
2014
By:
- Kataria, S.;
- Wagner, S.;
- Ruhkopf, J.;
- Gahoi, A.;
- Pandey, H.;
- Bornemann, R.;
- Vaziri, S.;
- Smith, A. D.;
- Ostling, M.;
- Lemme, M. C.
Publication type:
Other
Graphene field-effect devices.
Published in:
European Physical Journal: Special Topics, 2007, v. 148, n. 1, p. 19, doi. 10.1140/epjst/e2007-00222-8
By:
- Echtermeyer, T. J.;
- Lemme, M. C.;
- Bolten, J.;
- Baus, M.;
- Ramsteiner, M.;
- Kurz, H.
Publication type:
Article

Works by Lemme, M. C.

Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF<sub>2</sub> insulators.

Back Cover: Molecular beam epitaxy of graphene on mica (Phys. Status Solidi B 12/2012).

Molecular beam epitaxy of graphene on mica.

Novel hysteresis effect in ultrathin epitaxial Gd<sub>2</sub>O<sub>3</sub> high-k dielectric.

Chemical vapor deposited graphene: From synthesis to applications.

Chemical vapor deposited graphene: From synthesis to applications (Phys. Status Solidi A 11∕2014).

Graphene field-effect devices.